SEMICONDUCTOR E25A2CS, E25A2CR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. A3 A2 FEATURES A1 D3 B1 B2 D2 Repetitive Peak Reverse Voltage : VRRM=200V. D1 Average Forward Current : IF(AV)=25A. E30A2CS (+ Type) C1 H E30A2CR (- Type) E MAXIMUM RATING (Ta=25 CHARACTERISTIC ) SYMBOL RATING UNIT Repetitive Peak Reverse Voltage VRRM 200 V Average Forward Current IF(AV) 25 A Peak 1 Cycle Surge Current IFSM 250 (60Hz) A Tj -40 150 Tstg -40 150 Junction Temperature Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC SYMBOL TEST CONDITION MAX. UNIT - - 1.30 V 200 - - V VRRM=200V - - 50 A IF=0.1A, IR=0.1A - - 15 S DC total junction to case - - 1.0 /W VR IR=5mA IRRM trr Rth(j-c) Revision No : 0 MILLIMETERS _ 0.3 5.0 + _ 0.3 4.5 + _ 0.3 1.9 + _ 0.3 9.0 + _ 0.3 1.0 + _ 0.5 4.4 + _ 0.3 0.6 + TYP. Reverse Voltage 2007. 12. 10 DIM D2 D3 E F G H T MIN. IFM=100A Thermal Resistance MILLIMETERS _ 0.3 10.0 + _ 0.3 13.5 + _ 0.5 24.0 + _ 0.3 8.5 + _ 0.3 10.0 + _ 0.3 2.0 + _ 0.3 5.0 + _ 0.3 2.5 + ) VFM Reverse Recovery Time G F MR Peak Forward Voltage Repetitive Peak Reverse Current DIM A1 A2 A3 B1 B2 C1 C2 D1 C2 T POLARITY 1/2 I F - VF FORWARD CURRENT I F (A) 1000 100 10 1 0.7 0.8 0.9 1 1.1 FORWARD VOLTAGE V F (V) 2007. 12. 10 Revision No : 0 1.2 AVERAGE FORWARD CURRENT I F(AV) (A) E25A2CS, E25A2CR I F(AV) - Ta 40 Ta=Tc 30 20 10 0 0 40 80 120 160 AMBIENT TEMPERATURE Ta ( C) 2/2