Infineon BBY65 Silicon tuning diode Datasheet

BBY65...
Silicon Tuning Diode
High Q hyperabrupt tuning diode
Very low capacitance spread
Designed for low tuning voltage operation
for VCO's in mobile communications equipment
For low frequency control elements
such as TCXOS and VCXOS
High capacitance ratio and good C-V linearity
BBY65-02V
1
2
Type
BBY65-02V
Package
SC79
Configuration
single
LS(nH) Marking
0.6
F
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
VR
15
V
Forward current
IF
50
mA
Operating temperature range
Top
-55 ... 150
°C
Storage temperature
Tstg
-55 ... 150
1
Value
Unit
May-07-2003
BBY65...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
typ.
Unit
max.
DC Characteristics
Reverse current
IR
nA
VR = 10 V
-
-
10
VR = 10 V, TA = 85 °C
-
-
100
AC Characteristics
Diode capacitance
pF
CT
28.2
29.5
30.8
VR = 1 V, f = 1 MHz
-
20.25
-
VR = 2 V, f = 1 MHz
-
9.8
-
VR = 3 V, f = 1 MHz
-
4.45
-
2.6
2.7
2.8
10
10.9
-
pF
VR = 0.3 V, f = 1 MHz
VR = 4.7 V, f = 1 MHz
Capacitance ratio
CT0.3 /
VR = 0.3 V, VR = 4.7 V
CT4.7
Capacitance ratio
CT1 /CT3
-
4.55
-
pF
rS
-
0.6
0.9
VR = 1 V, VR = 3 V
Series resistance
VR = 1 V, f = 470 MHz
2
May-07-2003
BBY65...
Diode capacitance CT = (VR )
f = 1MHz
40
pf
CT
30
25
20
15
10
5
0
0
1
2
3
V
5
VR
3
May-07-2003
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