Diotec BZT52C75 Surface mount silicon planar zener diode Datasheet

BZT52C2V4 ... BZT52C75 (500 mW)
BZT52C2V4 ... BZT52C75 (500 mW)
Surface mount Silicon Planar Zener Diodes
Silizium-Planar-Zener-Dioden für die Oberflächenmontage
±0.2
3.8
Type
Code
Maximum power dissipation
Maximale Verlustleistung
500 mW
Nominal Z-voltage
Nominale Z-Spannung
3...75 V
Plastic case
Kunststoffgehäuse
1.6±0 .1
0.6 ±0.1
1 .1 ±0 .1
2.7±0.1
0 .1 2
Version 2015-03-10
~SOD-123
Weight approx.
Gewicht ca.
0.01 g
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Dimensions - Maße [mm]
Standard Zener voltage tolerance is graded to the international E 24 (~ ±5%) standard.
Other voltage tolerances and higher Zener voltages on request.
Die Toleranz der Zener-Spannung ist in der Standard-Ausführung gestuft nach der internationalen
Reihe E 24 (~ ±5%). Andere Toleranzen oder höhere Arbeitsspannungen auf Anfrage.
Maximum ratings and Characteristics
Grenz- und Kennwerte
BZT52-series
Ptot
500 mW 1)
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-50...+150°C
-50...+150°C
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
< 300 K/W 1)
Thermal resistance junction to terminal
Wärmewiderstand Sperrschicht – Anschluss
RthT
< 240 K/W
Power dissipation – Verlustleistung
TA = 25°C
Zener voltages see table on next page – Zener-Spannungen siehe Tabelle auf der nächsten Seite
Marking – Stempelung (alternative)
1
BZT52C2V4 = MH, WX, 4C
BZT52C6V2 = NA, WA, 4R
BZT52C16 = NN, WK, 5H
BZT52C43 = WU, 6A
BZT52C2V7 = MJ, W1, 4D
BZT52C6V8 = NB, WB, 4X
BZT52C18 = NP, WL, 5J
BZT52C47 = WV, 6B
BZT52C3V0 = MK, W2, 4E
BZT52C7V5 = NC, WC, 4Y
BZT52C20 = NR, WM, 5K
BZT52C51 = WW, 6C
BZT52C3V3 = MM, W3, 4F
BZT52C8V2 = ND, WD, 4Z
BZT52C22 = NX, WN, 5M
BZT52C56 = 6D
BZT52C3V6 = MN, W4, 4H
BZT52C9V1 = NE, WE, 5A
BZT52C24 = NY, WO, 5N
BZT52C62 = 6E
BZT52C3V9 = MP, W5, 4J
BZT52C10 = NE, WF, 5B
BZT52C27 = NZ, WP, 5P
BZT52C68 = 6F
BZT52C4V3 = MR, W6, 4K
BZT52C11 = NH, WG, 5C
BZT52C30 = PA, WQ, 5R
BZT52C75 = 6H
BZT52C4V7 = MX, W7, 4M
BZT52C12 = NJ, WH, 5D
BZT52C33 = PB, WR, 5X
BZT52C5V1 = MY, W8, 4N
BZT52C13 = NK, WI, 5E
BZT52C36 = PC, WS, 5Y
BZT52C5V6 = MZ, W9, 4P
BZT52C15 = NM, WJ, 5F
BZT52C39 = PD, WT, 5Z
Mounted on P.C. board with 25 mm2 copper pads at each terminal
Montage auf Leiterplatte mit 25 mm2 Kupferbelag (Lötpad an jedem Anschluss)
© Diotec Semiconductor AG
http://www.diotec.com/
1
BZT52C2V4 ... BZT52C75 (500 mW)
Maximum ratings and Characteristics
Grenz- und Kennwerte
(Tj = 25°C unless otherwise specified)
Type
Typ
Z-voltage range 1)
Z-Spanngs.-Bereich 1)
IZT = 5mA
(Tj = 25°C wenn nicht anders spezifiziert)
Dynamic resistance
Diff. Widerstand
Temp. Coeffic.
of Z-voltage
…der Z-Spannung
Reverse volt.
Sperrspanng.
IR = 100 nA
Z-current 2)
Z-Strom 2)
TA = 25°C
VZ min [V]
VZ max [V]
ZZK [Ω]
IZK [mA]
αVZ [10-4 /°C]
VR [V]
IZmax [mA]
BZT52C2V4
2.2
2.6
< 100
5
-9...-6
1 (<50 µA)
192
BZT52C2V7
2.5
2.9
< 110
5
-9...-6
1 (<20 µA)
172
BZT52C3V0
2.8
3.2
< 120
5
-8...-5
1 (<10 µA)
156
BZT52C3V3
3.1
3.5
< 130
5
-8...-5
1 (<5 µA)
143
BZT52C3V6
3.4
3.8
< 130
5
-8...-5
1 (<5 µA)
132
BZT52C3V9
3.6
4.2
< 130
5
-8...-5
1 (<3 µA)
119
BZT52C4V3
4.0
4.6
< 130
5
-6...-3
1 (<3 µA)
109
BZT52C4V7
4.4
5.0
< 130
5
-5...+2
2 (<3 µA)
100
BZT52C5V1
4.8
5.4
< 130
5
-2...+2
2 (<2 µA)
93
BZT52C5V6
5.2
6.0
< 80
5
-5...+5
2 (<1 µA)
83
BZT52C6V2
5.8
6.6
< 50
5
-3...+6
4 (<3 µA)
76
BZT52C6V8
6.4
7.2
< 30
5
+3...+7
4 (<2 µA)
69
BZT52C7V5
7.0
7.9
< 30
5
+3...+7
5 (<1 µA)
63
BZT52C8V2
7.7
8.7
< 30
5
+8...+7
5 (<0.7 µA)
57
BZT52C9V1
8.5
9.6
< 30
5
+3...+9
6 (<0.5 µA)
52
BZT52C10
9.4
10.6
< 30
5
+3...+10
7
47
BZT52C11
10.4
11.6
< 30
5
+3...+11
8
43
BZT52C12
11.4
12.7
< 35
5
+3...+11
9
39
BZT52C13
12.4
14.1
< 35
5
+3...+11
10
35
BZT52C15
13.8
15.6
< 40
5
+3...+11
11
32
BZT52C16
15.3
17.1
< 40
5
+3...+11
12
29
BZT52C18
16.8
19.1
< 45
5
+3...+11
13
26
BZT52C20
18.8
21.2
< 50
5
+3...+11
15
24
BZT52C22
20.8
23.3
< 55
5
+4...+12
17
21
BZT52C24
22.8
25.6
< 60
5
+4...+12
19
20
BZT52C27
25.1
28.9
< 70
2
+4...+12
21
17
BZT52C30
28
32
< 80
2
+4...+12
23
16
BZT52C33
31
35
< 80
2
+4...+12
25
14
BZT52C36
34
38
< 90
2
+4...+12
27
13
IZT = 2.5 mA
BZT52C39
37
41
<100
2
+4...+12
30 (< 2 µA)
12
BZT52C43
40
46
<130
2
+4...+12
33 (< 2 µA)
11
BZT52C47
44
50
<150
2
+4...+12
36 (< 2 µA)
10
BZT52C51
48
54
<180
2
+4...+12
39 (< 1 µA)
9
BZT52C56
52
60
<180
2
+4...+12
43 (< 1 µA)
8
BZT52C62
58
66
<200
2
+4...+12
47 (<0.2 µA)
8
BZT52C68
64
72
<250
2
+4...+12
52 (<0.2 µA)
7
BZT52C75
70
79
<300
2
+4...+12
57 (<0.2 µA)
6
1
2
2
Tested with pulses (20 ms) – Gemessen mit Impulsen (20 ms)
Mounted on P.C. board with 25 mm2 copper pads at each terminal
Montage auf Leiterplatte mit 25 mm2 Kupferbelag (Lötpad an jedem Anschluss)
http://www.diotec.com/
© Diotec Semiconductor AG
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