Diodes DMS2220LFW P-channel enhancement mode mosfet with integrated sbr Datasheet

DMS2220LFW
P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR
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Features
NEW PRODUCT
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Mechanical Data
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Low On-Resistance
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95mΩ @VGS = -4.5V
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120mΩ @VGS = -2.5V
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86mΩ (typ) @VGS = -1.8V
Low Gate Threshold Voltage, -1.3V Max
Fast Switching Speed
Low Input/Output Leakage
Incorporates Low VF Super Barrier Rectifier (SBR)
Low Profile, 0.5mm Max Height
Lead Free/RoHS Compliant (Note 2)
"Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Case: DFN3020-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Finish – NiPdAu over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 5
Ordering Information: See Page 5
Weight: 0.011 grams (approximate)
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DFN3020-8
Top View
Bottom View
Maximum Ratings – TOTAL DEVICE
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current (Note 4)
A
K
K
S
D
D
G
D
D
A
K
A
S
D
Top View
Internal Schematic
G
Bottom View
Pin Configuration
Value
1.5
85
-55 to +150
Unit
W
°C/W
°C
@TA = 25°C unless otherwise specified
Symbol
VDSS
VGSS
ID
IDM
Value
-20
±12
-2.9
-10
Units
V
V
A
A
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
Value
Unit
35
V
25
1
V
A
IFSM
3
A
@TA = 25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current
8.3ms single half sine-wave superimposed on rated load
1.
2.
3.
4.
K
Symbol
PD
RθJA
TJ, TSTG
Maximum Ratings – P-CHANNEL MOSFET – Q1
Notes:
K
@TA = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Maximum Ratings – SBR – D1
A
Device mounted on FR-4 PCB, on minimum recommended, 2oz Copper pad layout.
No purposefully added lead.
Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Repetitive rating, pulse width limited by junction temperature.
SBR is a registered trademark of Diodes Incorporated.
DMS2220LFW
Document number: DS31547 Rev. 8 - 2
1 of 6
www.diodes.com
March 2009
© Diodes Incorporated
DMS2220LFW
Electrical Characteristics – P-CHANNEL MOSFET – Q1
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
-20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-1
±100
±800
V
μA
-0.45
⎯
-1.3
V
60
74
86
95
120
⎯
mΩ
|Yfs|
VSD
⎯
⎯
⎯
⎯
⎯
8
0.7
⎯
-1.2
S
V
Ciss
Coss
Crss
⎯
⎯
⎯
632
65
54
⎯
⎯
⎯
pF
pF
pF
IGSS
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
VGS(th)
Static Drain-Source On-Resistance
RDS (ON)
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Electrical Characteristics – SBR – D1
Symbol
V(BR)R
Forward Voltage
VF
Reverse Current (Note 5)
IR
Notes:
nA
Test Condition
VGS = 0V, ID = -250μA
VDS = -20V, VGS = 0V
VGS = ±8V, VDS = 0V
VGS = ±12V, VDS = 0V
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -2.8A
VGS = -2.5V, ID = -2.0A
VGS = -1.8V, ID = -1.0A
VDS = -5V, ID = -2.8A
VGS = 0V, IS = -1.6A
VDS = -10V, VGS = 0V
f = 1.0MHz
@ TA = 25ºC unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 5)
Min
35
Typ
40
⎯
⎯
⎯
⎯
⎯
Max
⎯
0.42
0.49
100
⎯
Unit
V
V
μA
Test Condition
IR = 1mA
IF = 0.5A
IF = 1.0A
VR = 20V
5. Short duration pulse test used to minimize self-heating effect.
Q1, P-CHANNEL MOSFET
10
10
VGS = -8.0V
VDS = -5V
VGS = -4.5V
8
8
VGS = -2.5V
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
NEW PRODUCT
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
@TA = 25°C unless otherwise specified
VGS = -2.0V
6
VGS = -1.5V
4
6
4
TA = 150°C
2
2
VGS = -1.0V
0
0
TA = -55°C
0
0.5
5
1
1.5
-VGS, GATE SOURCE VOLTAGE (V)
2
Fig. 2 Typical Transfer Characteristics
SBR is a registered trademark of Diodes Incorporated.
DMS2220LFW
Document number: DS31547 Rev. 8 - 2
TA = 85°C
TA = 25°C
VGS = -1.2V
1
2
3
4
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
TA = 125°C
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March 2009
© Diodes Incorporated
DMS2220LFW
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.12
0.1
0.08
VGS = -1.8V
0.06
VGS = -2.5V
VGS = -4.5V
0.04
0.02
0
0
1
2
3
4
5
6
7
-ID, DRAIN CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
0.12
0.1
VGS = -2.5V
ID = -2A
VGS = -4.5V
ID = -5A
1.0
0.8
0.6
-50
TA = 150°C
TA = 125°C
0.08
TA = 85°C
0.06
TA = 25°C
0.04
TA = -55°C
0.02
0
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.4
1.2
0.14
8
1.6
1
2
3
4
5
6
7
-ID, DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
8
0.11
0.09
VGS = -2.5V
ID = -2A
0.07
VGS = -4.5V
ID = -5A
0.05
0.03
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
10,000
1
-VGS(TH), GATE THRESHOLD VOLTAGE (V)
f = 1MHz
C, CAPACITANCE (pF)
NEW PRODUCT
Q1, P-CHANNEL MOSFET - Continued
0.14
1,000
Ciss
100
Coss
Crss
10
0
4
8
12
16
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 7 Typical Capacitance
20
SBR is a registered trademark of Diodes Incorporated.
DMS2220LFW
Document number: DS31547 Rev. 8 - 2
3 of 6
www.diodes.com
0.9
0.8
0.7
0.6
ID = -1mA
0.5
ID = -250µA
0.4
0.3
0.2
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 8 Gate Threshold Variation vs. Ambient Temperature
March 2009
© Diodes Incorporated
DMS2220LFW
Q1, P-CHANNEL MOSFET - Continued
-IS, SOURCE CURRENT (A)
8
6
TA = 25°C
4
2
0
0
0.2 0.4 0.6 0.8
1
1.2
1.4 1.6
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 9 Diode Forward Voltage vs. Current
D1, SBR
IF, INSTANTANEOUS FORWARD CURRENT (A)
0.7
0.6
PD, POWER DISSIPATION (W)
NEW PRODUCT
10
0.5
0.4
0.3
0.2
0.1
0
0
0.5
1
1.5
IF(AV), AVERAGE FORWARD CURRENT (A)
Fig. 10 Forward Power Dissipation
SBR is a registered trademark of Diodes Incorporated.
DMS2220LFW
Document number: DS31547 Rev. 8 - 2
1
TA = 150°C
0.1
0.01
TA = 125°C
TA = 85°C
TA = 25°C
0.001
0.0001
0
4 of 6
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TA = -55°C
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 11 Typical Forward Characteristics
March 2009
© Diodes Incorporated
DMS2220LFW
D1, SBR - Continued
10,000
T A = 125°C
1,000
C, CAPACITANCE (pF)
IR, INSTANTANEOUS REVERSE CURRENT(uA)
TA = 150°C
1,000
100
TA = 85°C
10
TA = 25°C
1
0.01
0
100
10
1
0.1
5
10
15
20
25
30
35
40
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 12 Typical Reverse Characteristics
1
10
100
VR, DC REVERSE VOLTAGE (V)
Fig. 13 Total Capacitance vs. Reverse Voltage
TA, DERATED AMBIENT TEMPERATURE (°C)
150
1.4
1.2
Note 2
1.0
0.8
0.6
0.4
0.2
0
25
125
100
75
50
25
0
50
75
100
125
150
TA, AMBIENT TEMPERATURE (°C)
Fig. 14 Forward Current Derating Curve
Ordering Information
0
175
10
20
30
VR, DC REVERSE VOLTAGE (V)
Fig. 15 Operating Temperature Derating
40
(Note 6)
Part Number
DMS2220LFW-7
Notes:
f = 1MHz
0.1
1.6
IF(AV), AVERAGE FORWARD CURRENT (A)
NEW PRODUCT
10,000
Case
DFN3020-8
Packaging
3000/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
ME = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
ME YM
Date Code Key
Year
Code
Month
Code
2008
V
Jan
1
2009
W
Feb
2
Mar
3
2010
X
Apr
4
2011
Y
May
5
SBR is a registered trademark of Diodes Incorporated.
DMS2220LFW
Document number: DS31547 Rev. 8 - 2
Jun
6
5 of 6
www.diodes.com
2012
Z
Jul
7
2013
A
Aug
8
Sep
9
2014
B
Oct
O
2015
C
Nov
N
Dec
D
March 2009
© Diodes Incorporated
DMS2220LFW
Package Outline Dimensions
A
A3
NEW PRODUCT
A1
D
Z
b
e
D1
E
E1
L
DFN3020-8
Dim Min Max Typ
A
0.77 0.83 0.80
A1
0
0.05 0.02
A3
0.15
b
0.25 0.35 0.30
D
2.95 3.075 3.00
D1 0.90 1.10 1.00
e
0.65
E
1.95 2.075 2.00
E1 0.80 1.00 0.90
L
0.30 0.40 0.35
Z
0.375
All Dimensions in mm
Suggested Pad Layout
X
C
X1
Y1
R
G2
G
G1
X1
Y1
G
Y
Dimensions
C
G
G1
G2
R
X
X1
Y
Y1
Value (in mm)
0.650
0.600
0.450
0.150
0.150
0.390
1.000
0.550
0.900
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
SBR is a registered trademark of Diodes Incorporated.
DMS2220LFW
Document number: DS31547 Rev. 8 - 2
6 of 6
www.diodes.com
March 2009
© Diodes Incorporated
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