Kexin AO3415AS-HF-3 P-channel mosfet Datasheet

MOSFET
SMD Type
P-Channel MOSFET
AO3415AS-HF (KO3415AS-HF)
SOT-23-3
Unit: mm
■ Features
0.4
+0.2
2.9 -0.1
+0.1
0.4 -0.1
3
● RDS(ON) < 45mΩ (VGS =-4.5V)
1
0.55
● ID =-4A (VGS =-4.5V)
+0.2
1.6 -0.1
+0.2
2.8 -0.1
● VDS (V) =-20V
2
+0.02
0.15 -0.02
+0.1
0.95 -0.1
+0.1
1.9 -0.2
● RDS(ON) < 54mΩ (VGS =-2.5V)
+0.2
-0.1
● RDS(ON) < 75mΩ (VGS =-1.8V)
1.1
● ESD Rating: 3000V HBM
0-0.1
Pb−Free Lead Finish
D
+0.1
0.68 -0.1
1. Gate
● Pb−Free Package May be Available. The G−Suffix Denotes a
2. Source
3. Drain
G
■ Absolute Maximum Ratings Ta = 25℃
Parameter
S
Symbol
Rating
Drain-Source Voltage
VDS
-20
Gate-Source Voltage
VGS
±8
Continuous Drain Current
Ta = 25℃
Ta = 70℃
Pulsed Drain Current
Power Dissipation
(Note.1)
IDM
Ta = 25℃
Ta = 70℃
Thermal Resistance.Junction- to-Ambient
t≤ 10s
Steady-State
Thermal Resistance.Junction- to-Lead
ID
PD
RthJA
RthJL
Unit
V
-4
-3.5
A
-30
1.5
1
W
80
100
℃/W
52
Junction Temperature
TJ
150
Junction Storage Temperature Range
Tstg
-55 to 150
℃
Note.1: The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
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MOSFET
SMD Type
P-Channel MOSFET
AO3415AS-HF (KO3415AS-HF)
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Drain-Source Breakdown Voltage
VDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body leakage current
Gate Threshold Voltage
IGSS
VGS(th)
Test Conditions
Min
Typ
VDS=-20V, VGS=0V
-1
VDS=-20V, VGS=0V, TJ=55℃
-5
VDS=0V, VGS=±8V
-0.3
VDS=VGS ID=-250μA
VGS=-4.5V, ID=-4A
RDS(On)
On state drain current
gFS
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Gate resistance
Rg
VGS=-1.8V, ID=-2A
75
VGS=-4.5V, VDS=-5V
VDS=-5V, ID=-4A
-30
A
20
160
VGS=0V, VDS=0V, f=1MHz
6.5
Turn-On DelayTime
td(on)
9.5
Turn-On Rise Time
tr
Turn-Off DelayTime
td(off)
Maximum Body-Diode Continuous Current
■ Marking
Marking
AF** F
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VGS=-4.5V, VDS=-10V, ID=-4A
VGS=-4.5V, VDS=-10V, RL=2.5Ω,
RGEN=3Ω
nC
1.3
17
ns
94
35
IF=-4A, dI/dt=100A/μs
31
13.8
IS
VSD
Ω
17.2
4.5
Qrr
pF
205
Qgd
Body Diode Reverse Recovery Charge
S
1450
VGS=0V, VDS=-10V, f=1MHz
Gate Drain Charge
tf
mΩ
76
Qg
trr
V
54
Qgs
Body Diode Reverse Recovery Time
uA
-0.9
62
TJ=125℃
Total Gate Charge
Turn-Off Fall Time
±10
VGS=-2.5V, ID=-4A
Gate Source Charge
Diode Forward Voltage
2
ID(ON)
μA
45
VGS=-1.5V, ID=-1A
Forward Transconductance
Unit
V
VGS=-4.5V, ID=-4A
Static Drain-Source On-Resistance
Max
-20
ID=-250μA, VGS=0V
IS=-1A,VGS=0V
-0.78
nC
-2.2
A
-1
V
MOSFET
SMD Type
P-Channel MOSFET
AO3415AS-HF (KO3415AS-HF)
■ Typical Characterisitics
40
-8V
35
15
-4.5V
30
12
-2.5V
25
9
-ID(A)
-ID (A)
VDS=-5V
-3.0V
20
-2.0V
15
10
3
5
125°C
0
0
1
2
3
4
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
0
5
100
0.5
1
1.5
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
Normalized On-Resistance
1.60
VGS=-1.5V
80
60
VGS=-1.8V
40
VGS=-2.5V
VGS=-4.5V
2
ID=-4A, VGS=-4.5V
1.40
ID=-4A, VGS=-2.5V
1.20
ID=-2A, VGS=-1.8V
1.00
0.80
20
0
2
4
6
8
0
10
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
1.0E+01
120
ID=-4A
1.0E+00
100
1.0E-01
80
-IS (A)
RDS(ON) (mΩ
Ω)
25°C
VGS=-1.5V
0
RDS(ON) (mΩ
Ω)
6
60
125°C
40
125°C
25°C
1.0E-02
1.0E-03
1.0E-04
25°C
20
0
2
4
6
8
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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MOSFET
SMD Type
P-Channel MOSFET
AO3415AS-HF (KO3415AS-HF)
■ Typical Characterisitics
1400
5
VDS=-10V
ID=-4A
1200
Capacitance (pF)
4
-VGS (Volts)
3
2
1000
600
400
1
Coss
200
Crss
0
0
0
2
4
6
8
10
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
12
5
10
15
-VDS (Volts)
Figure 8: Capacitance Characteristics
20
1000
100.0
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
100µs
1ms
1.0
10ms
DC
0.1
Power (W)
10µs
10.0
-ID (Amps)
Ciss
800
100ms
1
0.0
0.1
10
10s
TJ(Max)=150°C
TA=25°C
0.01
100
1
10
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.00001
100
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
.
Zθ JA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=100°C/W
0.1
PD
0.01
Single Pulse
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4
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100
1000
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