Microsemi BRF91 Rf & microwave discrete low power transistor Datasheet

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
BFR91
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
•
High Current-Gain – Bandwidth Product, fT = 5 GHz (typ) @ IC = 30 mA
•
Low Noise Figure – NF = 1.9 dB (typ) @ f = 0.5 GHz, 2.5 dB (typ) @ 1GHz
•
High Power Gain – Gmax = 16 dB (typ) @ f = 0.5 GHz, 10.9dB (typ) @ 1GHz
Macro T
(STYLE #2)
DESCRIPTION: Designed primarily for use in high-gain, low noise, small-signal amplifiers. Also used in
applications requiring fast switching times.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
VCEO
Parameter
Collector-Emitter Voltage
Value
12
Unit
Vdc
VCBO
VEBO
Collector-Base Voltage
15
Vdc
Emitter-Base Voltage
3.0
Vdc
IC
Collector Current
35
mA
180
2.0
mWatts
mW/ ºC
-65 to +150
ºC
500
ºC/W
Thermal Data
P
D
Tstg
R
θJA
Total Device Dissipation @ TA = 60ºC
Derate above 60ºC
Storage Temperature
Total Device Dissipation @ TA = 60ºC
Derate above 60ºC
MSC1308.PDF 10-25-99
BFR91
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol
BVCEO
BVCB0
BVEBO
ICBO
Test Conditions
Value
Min.
Typ.
Max.
Unit
Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
12
-
-
Vdc
Collector-Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
15
-
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
3.0
-
-
Vdc
-
-
50
nA
25
-
250
-
Collector Cutoff Current
(VCB = 5.0 Vdc, VBE = 0 Vdc)
(on)
HFE
DC Current Gain
(IC = 30 mAdc, VCE = 5.0 Vdc)
DYNAMIC
Symbol
Ftau
CCB
Test Conditions
Value
Min.
Typ.
Max.
Unit
Current-Gain – Bandwidth Product
(IC = 30 mA, VCE = 5.0 Vdc, f = 0.5 GHz)
-
5.0
-
GHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
-
0.7
1.0
pF
MSC1308.PDF 10-25-99
BFR91
FUNCTIONAL
Symbol
NF
GNF
2
|S21|
MSG
G
U max
Test Conditions
Value
Noise Figure
(IC = 2.0 mAdc, VCE = 5.0 Vdc, f = 0.5 GHz)
(IC = 2.0 mAdc, VCE = 5.0 Vdc, f = 1.0 GHz)
Power Gain at Optimum Noise Figure
(IC = 2.0 mAdc, VCE = 5.0 Vdc, f = 0.5 GHz)
(IC = 2.0 mAdc, VCE = 5.0 Vdc, f = 1.0 GHz)
Insertion Gain
(IC = 30 mAdc, VCE = 5.0 Vdc, f = 0.5 GHz)
(IC = 30 mAdc, VCE = 5.0 Vdc, f = 1.0 GHz)
Maximum Stable Gain
(IC = 30 mAdc, VCE = 5.0 Vdc, f = 0.5 GHz)
(IC = 30 mAdc, VCE = 5.0 Vdc, f = 1.0 GHz)
Maximum Unilateral Gain (1)
(IC = 30 mAdc, VCE = 5.0 Vdc, f = 0.5 GHz)
(IC = 30 mAdc, VCE = 5.0 Vdc, f = 1.0 GHz)
Min.
Typ.
Max.
Unit
-
1.9
2.5
-
dB
-
11
8.0
-
dB
14.5
15.5
10.2
-
dB
-
18.6
12.9
-
dB
-
16.5
10.9
-
dB
Table 1. Common Emitter S-Parameters, @ VCE = 5.0 V, IC = 30 mA
f
(MHz)
S11
|S11|
∠φ
S21
|S21|
∠φ
S12
|S12|
∠φ
S22
|S22|
∠φ
100
0.258
-115
25.77
123
0.021
76
0.536
-33
200
0.290
-149
14.66
103
0.038
74
0.384
-43
300
0.298
-164
10.05
94
0.054
75
0.311
-45
500
0.305
-179
6.18
84
0.085
75
0.264
-49
700
0.302
170
4.5
77
0.117
73
0.256
-52
800
0.304
166
3.98
73
0.133
72
0.257
-54
1000
0.304
158
3.24
67
0.166
70
0.251
-57
1500
0.256
134
2.3
54
0.24
65
0.263
-69
MSC1308.PDF 10-25-99
BFR91
3
10
15
200
3.4
30
15
30
15
15
30
400
4.5
1.5
6
17
900
1
12
50
300
5.5
50
6
13
1600
1
15
40
330
TO-39
MRF517
NPN
300
7.5
50
15
5.5
4600
3
25
150
18
1000
TO-72
MRF904
NPN
450
1.5
5
6
11
4000
1
15
30
12
50
TO-72
2N6304
NPN
450
5
2
5
14
1400
1
15
50
MACRO T
BFR91
NPN
500
1.9
2
5
16.5
5000
1
12
35
MACRO T
BFR96
NPN
500
2
10
10
14.5
500
2.6
15
100
15
200
15
200
15
30
50
Device
12.5
16
500
12.5
16
500
TO-39
MRF607
NPN 175
1.75
11.5
50
12.5
16
TO-39
2N6255
NPN 175
3
7.8
50
12.5
TO-72
2N5179
NPN 200
6
NPN 5 1 2
0.5
10
65
7.5
16
150
11
SO-8
MRF5812, R1, R2
NPN
500
2
50
10
15.5
17.8
5000
MACRO X
MRF581A
NPN
500
2
50
10
14
15
5000
Macro
BFR90
NPN
500
2.4
2
10
15
18
5000
400
TO-72
BFY90
NPN
500
2.5
2
5
20
1300
15
TO-72
MRF914
NPN
500
2.5
5
10
15
4500
12
40
MACRO X
MRF581
NPN
500
2.5
50
10
15
17.8
5000
16
200
MA C R O X
MRF559
NPN 5 1 2
0.5
13
60
12.5
16
150
TO-39
2N3866A
NPN 4 0 0
1
10
45
28
30
400
M R F 3 8 6 6 , R 1 , R 2 NPN 4 0 0
1
10
45
28
30
SO-8
Type
3.4
200
NPN
60
50
MRF559
Device
200
NPN
11.5
11.5
MA C R O X
P O W ER MA C R O
MRF555
NPN 4 7 0
1.5
11
50
12.5
16
400
P O W ER MA C R O
MRF555T
NPN 4 7 0
1.5
11
50
12.5
16
400
MA C R O X
MRF559
NPN 8 7 0
0.5
6.5
70
7.5
16
150
MA C R O X
MRF559
NPN 8 7 0
0.5
9.5
65
12.5
16
150
SO-8
MRF8372,R1,R2
NPN 8 7 0
0.75
8
55
12.5
16
200
P O W ER MA C R O
MRF557
NPN 8 7 0
1.5
8
55
12.5
16
400
P O W ER MA C R O
MRF557T
NPN 8 7 0
1.5
8
55
12.5
16
400
TO-39
MRF586
NPN
500
3
90
15
11
14.5
4500
2.2
17
200
MRF951
NPN
1000
1.3
5
6
14
17
8000
0.45
10
100
MACRO X
MRF571
NPN
1000
1.5
10
6
10
8000
1
10
70
MACRO T
BFR91
NPN
1000
2.5
2
5
8
11
5000
1
12
35
MACRO T
BFR90
NPN
1000
3
2
10
10
12.5
5000
1
15
30
TO-39
MRF545
PNP
14
1400
2
70
400
TO-39
MRF544
NPN
13.5
1500
70
400
RF (LNA / General Purpose) Selection Guide
1
5
1
2
4
4
2
3
Macro T
MSC1308.PDF 10-25-99
Macro X
1
MACRO X
RF (Low Power PA / General Purpose) Selection Guide
2
400
400
2N2857
1.5
1.5
1300
20
30
2N5179
NPN 175
NPN 175
20
3.5
TO-72
MRF553
MRF553T
MRF5943, R1, R2 NPN
1200
11.4 1000
TO-72
POWER MACRO
POWER MACRO
SO-8
12
Ftau (MHz)
200
NPN
Ccb(pF)
BVCEO
IC max (mA)
NPN
MRF5943C
Gu Max (dB)
2N5109
TO-39
GN (dB)
TO-39
400
Freq (MHz)
400
20
NF (dB)
NF IC (mA)
NF VCE
20
12
Package
12
50
IC max (mA)
60
10
BVCEO
18
1
GPE VCC
0.15
NPN 175
Efficiency (%)
NPN 175
2N4427
GPE (dB)
Pout (watts)
MRF4427, R2
Type
SO-8
TO-39
Package
GPE Freq (MHz)
RF Low Power PA, LNA, and General Purpose RF Discrete Selector Guide
Power Macro
SO-8
BFR91
PIN 1. COLLECTOR
2. EMITTER
3. BASE
1.
2.
3.
MSC1308.PDF 10-25-99
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