MICROWAVE POWER GaAs FET TIM4450-12UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=41.5dBm at 4.4GHz to 5.0GHz n HIGH GAIN G1dB=10.5dB at 4.4GHz to 5.0GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain SYMBOL CONDITIONS P1dB UNIT MIN. TYP. MAX. dBm 40.5 41.5 dB 9.5 10.5 A 3.2 3.8 Compression Point Power Gain at 1dB Gain G1dB Compression Point VDS= 10V f = 4.4 to 5.0GHz Drain Current IDS1 Gain Flatness ∆G dB ±0.6 Power Added Efficiency ηadd % 40 3rd Order Intermodulation IM3 dBc -44 -47 Distortion Drain Current Channel Temperature Rise Two-Tone Test Po=30.5dBm IDS2 (Single Carrier Level) A 3.2 3.8 ∆Tch (VDS X IDS + Pin – P1dB) °C 80 CONDITIONS VDS= 3V IDS= 4.0A VDS= 3V IDS= 40mA VDS= 3V VGS= 0V IGS= -140µA UNIT mS MIN. MAX. TYP. 2500 V -1.0 -2.5 -4.0 A 7.2 V -5 Channel to Case °C/W 2.0 2.4 X Rth(c-c) Recommended gate resistance(Rg) : Rg= 100 Ω(MAX.) ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Pinch-off Voltage SYMBOL gm VGSoff Saturated Drain Current IDSS Gate-Source Breakdown Voltage VGSO Thermal Resistance Rth(c-c) uThe information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Oct. 2006 TIM4450-12UL ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current IDS A 10.0 Total Power Dissipation (Tc= 25 °C ) PT W 62.5 Channel Temperature Tch °C 175 Storage Tstg °C -65 to +175 PACKAGE OUTLINE (2-16G1B) 0.7±0.15 2.5 MIN. Unit in mm 4 – C1.0 (1) (1) Gate (2) Source (2) 2.5 MIN. 2.6±0.3 (2) 17.4± 0.4 8.0±0.2 (3) Drain (3) 20.4±0.3 5.5 MAX. 2.4± 0.3 0.2 MAX. 16.4 MAX. 1.4± 0.3 +0.1 0.1 -0.05 24.5 MAX. HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. 2 TIM4450-12UL RF PERFORMANCE Output Power vs. Frequency 44 VDS= 10V IDS≅ 3.2A Pin= 31.0dBm 42 41 40 39 4 4.2 4.4 4.6 4.8 5 5.2 5.4 Frequency (GHz) Output Power vs. Input Power 43 90 80 P o 41 70 40 60 39 η 50 add 38 40 37 30 36 20 35 10 34 0 24 26 28 30 P in (dB m ) 3 32 34 η add (%) f= 4.7GHz VDS= 10V IDS≅ 3.2A 42 P o (dB m ) P o (dB m ) 43 TIM4450-12UL Power Dissipation vs. Case Temperature 100 P T (W ) 80 60 40 20 0 0 40 80 120 T c (℃ 160 200 ) IM3 vs. Output Power Characteristics - 20 VDS= 10V IDS≅ 3.2A f= 4.7GHz ∆f= 5MHz I M 3 (dB c) - 30 - 40 - 50 - 60 24 26 28 30 32 34 Po(dBm), Single Carrier Level 4 36