SAVANTIC BU407 Silicon npn power transistor Datasheet

SavantIC Semiconductor
Product Specification
BU406 BU407
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·High voltage;high speed
·Low collector saturation voltage
APPLICATIONS
·For use in horizontal deflection output
stages of TV’s and CTV’s circuits
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
BU406
VCBO
Collector-base voltage
200
Open base
BU407
VEBO
V
330
BU406
Collector-emitter voltage
Emitter-base voltage
UNIT
400
Open emitter
BU407
VCEO
VALUE
V
150
Open collector
6
V
IC
Collector current
7
A
ICM
Collector current-Peak
10
A
IB
Base current
4
A
60
W
Ptot
Total power dissipation
TC=25
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
MAX
UNIT
2.08
/W
SavantIC Semiconductor
Product Specification
BU406 BU407
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
VCEO(SUS)
PARAMETER
Collector-emitter
sustaining voltage
CONDITIONS
BU406
MIN
TYP.
MAX
UNIT
200
IC=100mA ; IB=0
BU407
V
150
VCEsat
Collector-emitter saturation voltage
IC=5A ;IB=0.5A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=5A ;IB=0.5A
1.2
V
5
mA
1.0
mA
BU406
ICES
VCE=400V; VBE=0
Collector cut-off current
BU407
VCE=330V; VBE=0
IEBO
Emitter cut-off current
VEB=6.0V; IC=0
hFE
DC current gain
IC=2A ; VCE=5V
40
fT
Transition frequency
IC=0.5A ;VCE=10V;f=1.0MHz
10
COB
Output capacitance
IE=0 ;VCB=10V;f=1.0MHz
Fall time
IC=5A ;VCC=40V
IB1 =-IB2=0.6A;L=150µH
tf
2
120
MHz
80
pF
0.75
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.10mm)
3
BU406 BU407
SavantIC Semiconductor
Product Specification
BU406 BU407
Silicon NPN Power Transistors
4
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