Production specification Silicon Epitaxial Planar Diode BAS316 FEATURES Pb z Very small plastic SMD package z High switching speed:max.4ns z Continuous reverse voltage:max.100v z Repetitive peak reverse voltage:max.100v z Repetitive peak forward current:max.500mA Lead-free APPLICATIONS z SOD-323 Surface mount fast switching diode ORDERING INFORMATION Type No. Marking BAS316 A6 Package Code SOD-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Characteristic Symbol Value Unit Repetitive peak reverse voltage VRRM 100 V Continuous Reverse Voltage VR 100 V Continuous forward Current IF 250 mA Repetitive peak forward current IFRM 500 mA IFSM 4 1 0.5 A Power Dissipation Pd 400 mW Junction and Storage Temperature Rage Tj,TSTG -65 to +150 ℃ Non-Repetitive peak forward current B013 Rev.B t=1μs t=1ms t=1s www.gmicroelec.com 1 Production specification Silicon Epitaxial Planar Diode BAS316 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Reverse Breakdown Voltage V(BR)R 100 - V IR=100μA Forward Voltage VF 0.715 0.855 1.0 1.25 V IF=1.0mA IF=10mA IF=50mA IF=150mA Reverse Current IR - 1.0 0.03 μA VR=75V VR=25V Capacitance between terminals CT - 1.5 pF VR=0,f=1.0MHz Reverse Recovery Time trr - 4.0 ns IF=IR=10mA,RL=100Ω TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified B013 Rev.B www.gmicroelec.com 2 Production specification Silicon Epitaxial Planar Diode BAS316 PACKAGE OUTLINE Plastic surface mounted package SOD-323 K SOD-323 C A B D H E J Dim Min Max A 1.60 1.80 B 1.20 1.40 C 0.9 Max D 0.30 Typical E 0.22 0.42 H 0.02 0.1 J K 0.1 Typical 2.55 2.75 All Dimensions in mm B013 Rev.B www.gmicroelec.com 3 Production specification Silicon Epitaxial Planar Diode BAS316 SOLDERING FOOTPRINT 0.63 0.83 1.60 2.85 Unit ：mm PACKAGE INFORMATION Device Package Shipping BAS316 SOD-323 3000/Tape&Reel B013 Rev.B www.gmicroelec.com 4