TOSHIBA SSM6P25TU

SSM6P25TU
TOSHIBA Field Effect Transistor
Silicon P Channel MOS Type (U-MOSIII)
SSM6P25TU
High Speed Switching Applications
Unit: mm
Low on-resistance:
2.1±0.1
Ron = 260mΩ (max) (@VGS = -4 V)
1.7±0.1
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
-20
V
Gate-Source voltage
VGSS
± 12
V
DC
ID
-0.5
Pulse
IDP
-1.5
PD
(Note 1)
500
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Drain current
Drain power dissipation
0.65 0.65
1.3±0.1
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
1
6
2
5
3
4
0.7±0.05
2.0±0.1
Ron = 430mΩ (max) (@VGS = -2.5 V)
A
1.Source1
2.Gate1
3.Drain2
+0.1
0.3-0.05
Optimum for high-density mounting in small packages
•
+0.06
0.16-0.05
•
4.Source2
5.Gate2
6.Drain1
UF6
JEDEC
―
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEITA
―
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-2T1B
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
Weight: 7.0 mg (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note:
Note 1: Mounted on FR4 board. (total dissipation)
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )
Marking
6
Equivalent Circuit (top view)
5
4
2
5
4
Q1
PH
1
6
Q2
3
1
2
3
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
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SSM6P25TU
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)
Characteristics
Symbol
Min
Typ.
Max
Unit
VGS = ± 12V, VDS = 0
⎯
⎯
±1
μA
V (BR) DSS
ID = -1 mA, VGS = 0
-20
⎯
⎯
V (BR) DSX
ID = -1 mA, VGS = +12 V
-8
⎯
⎯
Gate leakage current
IGSS
Drain-Source breakdown voltage
Drain cut-off current
IDSS
Test Condition
VDS = -20 V, VGS = 0
⎯
⎯
-1
μA
-0.5
⎯
-1.1
V
(Note2)
0.65
1.3
⎯
S
ID = -0.25 A, VGS = -4 V
(Note2)
⎯
210
260
ID = -0.25 A, VGS = -2.5 V
(Note2)
⎯
310
430
Vth
VDS = -3 V, ID = -0.1 mA
Forward transfer admittance
⏐Yfs⏐
VDS = -3 V, ID = -0.25 A
Drain-Source on-resistance
RDS (ON)
Gate threshold voltage
V
mΩ
Input capacitance
Ciss
VDS = -10 V, VGS = 0, f = 1 MHz
⎯
218
⎯
pF
Reverse transfer capacitance
Crss
VDS = -10 V, VGS = 0, f = 1 MHz
⎯
42
⎯
pF
Output capacitance
Coss
VDS = -10 V, VGS = 0, f = 1 MHz
⎯
52
⎯
pF
Switching time
Turn-on time
ton
VDD = -10 V, ID = -0.25 A,
⎯
16
⎯
Turn-off time
toff
VGS = 0~-2.5 V, RG = 4.7 Ω
⎯
15
⎯
ns
Note2: Pulse test
Switching Time Test Circuit
(a) Test circuit
0
OUT
(b) VIN
0V
10%
IN
RG
−2.5V
10 μs
VDD
90%
−2.5 V
RL
(c) VOUT
VDD = -10 V
RG = 4.7 Ω
< 1%
D.U. =
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
VDS (ON)
90%
10%
VDD
tr
ton
tf
toff
Precaution
Vth can be expressed as the voltage between gate and source when the low operating current value is ID=-100 μA for
this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower
voltage than Vth.
(The relationship can be established as follows: VGS (off) < Vth < VGS (on))
Please take this into consideration when using the device.
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SSM6P25TU
ID - VDS
ID - VGS
-10000
-1600
-5.0
-3.0
- 1000
-1200
Drain current ID (mA)
Drain current ID (mA)
-1400
-2.0
-1000
-4.0
-800
-1.8
-600
VGS=-1.6
-400
-0.2
-0.4
-0.6
-0.8
Ta=100°C
-1
25°
-25°C
Common Source
VDS=-3V
- 0.01
0
0
- 10
- 0.1
Common Source
Ta=25°C
-200
-100
-1
0
-1
-2
Gate-Source voltage VGS (V)
Drain-Source voltage VDS (V)
-3
-
RDS(ON) - ID
RDS(ON) - VGS
500
Common Source
ID=-250mA
400
Drain-Source on-resistance
RDS(ON) (mΩ)
Drain-Source on-resistance
RDS(ON) (mΩ)
500
-2.5V
300
200
VGS=-4V
100
Common Source
Ta=25°C
0
0
-200
-400
-600
-800
400
300
200
Ta=100°C
25°C
-25°C
100
0
0
-1000 -1200 -1400 -1600
Drain current ID (mA)
500
RDS(ON) - Ta
Gate threshold voltage Vth(V)
Drain-Source on-resistance
RDS(ON) (mΩ)
-2
-3 -4 -5 -6 -7 -8 -9 -10
Gate-Source voltage VGS (V)
Vth - Ta
-1
Common Source
ID=-250mA
400
-1
-2.5V
300
VGS=-4V
200
100
-0.8
-0.6
-0.4
-0.2
Common Source
ID=-0.1mA
VDS=-3V
0
-60 -40 -20 0
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
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SSM6P25TU
|Yfs| - ID
IDR - VDS
1600
Drain reverse current IDR (mA)
Forward transfer admittance
|Yfs| (S)
10
25°C
-25°C
1
Ta=100°C
Common Source
VDS=-3V
Ta=25°C
0
-10
Common Source
VGS=0V
Ta=25°C
1400
1200
1000
800
600
400
200
0
-100
-1000
-10000
0.0
0.2
Drain current ID (mA)
C - VDS
Ciss
100
Coss
Crss
Common Source
VGS=0V
f=1MHz
Ta=25°C
-1
-10
Drain-Source voltage VDS (V)
toff
Common Source
VDD=-10V
VGS=0~-2.5V
Ta=25°C
100
tf
10
ton
tr
10
-0
1.0
t - ID
1000
Switching time t (ns)
Capacitance C (pF)
1000
0.4
0.6
0.8
Drain-Source voltage VDS (V)
1
-10
-100
-100
-1000
Drain current ID (mA)
-10000
PD* - Ta
Drain power dissipation PD* (mW)
1000
t=10s
800
600
mounted FR4 board
(25.4mm*25.4mm*1.6t
Cu Pad :645mm2)
DC
400
200
0
0
20
*:Total Rating
40
60
80 100 120 140
Ambient temperature Ta(℃)
160
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SSM6P25TU
Transient thermal impedance
rth (°C/W )
rth – tw
1000
Single pulse
Mounted on FR4 board
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )
100
10
1
0.001
0.01
0.1
1
Pulse width
10
tw
100
1000
(s)
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SSM6P25TU
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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