MICROWAVE POWER GaAs FET TIM5359-80SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA Preliminary FEATURES n LOW INTERMODULATION DISTORTION IM3=-30 dBc at Pout= 42.0dBm Single Carrier Level n HIGH POWER P1dB=49.0dBm at 5.3GHz to 5.9GHz n HIGH GAIN G1dB=7.5dB at 5.3GHz to 5.9GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise SYMBOL P1dB CONDITIONS UNIT dBm MIN. 48.0 G1dB VDS= 10V IDSset=10.0A f = 5.3 to 5.9GHz dB 6.5 7.5 A dB % dBc -25 18.0 36 -30 20.0 ±0.8 A °C 16.0 100 UNIT S MIN. MAX. TYP. 20 V -1.0 -1.8 -3.0 A 38 V -5 °C/W 0.5 0.6 IDS1 ∆G ηadd IM3 IDS2 ∆Tch Two-Tone Test Po=42.0dBm (Single Carrier Level) (VDS X IDS +Pin-P1dB) X Rth(c-c) Recommended Gate Resistance(Rg) : 28 Ω TYP. MAX. 49.0 (Max.) ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Saturated Drain Current IDSS Gate-Source Breakdown Voltage Thermal Resistance VGSO CONDITIONS VDS= 3V IDS= 12.0A VDS= 3V IDS= 200mA VDS= 3V VGS= 0V IGS= -1.0mA Rth(c-c) Channel to Case Pinch-off Voltage SYMBOL gm VGSoff u The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Aug. 2006 TIM5359-80SL ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current IDS A 26 Total Power Dissipation (Tc= 25 °C) PT W 250 Channel Temperature Tch °C 175 Storage Temperature Tstg °C -65 to +175 PACKAGE OUTLINE (7-AA02C) 0.7±0.15 2.5 MIN. Unit in mm 4 – C1.0 (1) (1) Gate (2) Source (3) 17.4± 0.4 (2) 2.5 MIN. 1.3±0.15 20.9±0.3 +0.05 24.5 MAX. 2.4± 0.3 1.4± 0.3 16.9 MAX. 5.5 MAX. 2.6±0.3 (2) 0.15 -0.05 8.0±0.2 (3) Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. 2