WILLAS FM120-M+ DTC124ECA THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers Featuresbetter reverse leakage current and thermal resistance. • • Case : Molded plastic, SOD-123H Parameter Method 2026 Supply voltage Polarity : Indicated by cathode band Input voltage • Position : Any • Mounting Output current Power dissipation • Weight : Approximated 0.011 gram Junction temperature StorageMAXIMUM temperature RATINGS AND .080(2.04) .070(1.78) 0.040(1.0) 0.024(0.6) Min ---10 0.031(0.8) Typ. Typ Max Unit 50 --V Dimensions in inches and (millimeters) --40 V 30 ----mA 100 --200 --mW ć --150 ---55 --150CHARACTERISTICS ć ELECTRICAL .110(2.80) Symbol VCC VIN IO IC(MAX) Pd Tj Tstg 0.071(1.8) 0.056(1.4) 0.031(0.8) Typ. , Absolute• maximum ratings @ 25к Terminals :Plated terminals, solderable per MIL-STD-750 0.012(0.3) Typ. .106(2.70) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .083(2.10) • 0.146(3.7) 0.130(3.3).122(3.10) .006(0.15)MIN. • • • SOT-23 .063(1.60) .047(1.20) • SOD-123H • Low profile surface mounted application in order to Pb-Freeoptimize package is available board space. Low power high efficiency. RoHS•product forloss, packing code suffix ”G” High current capability, low forward voltage drop. • Halogen free product for packing code suffix “H” High surge capability. Epoxy•meets UL 94 V-0 flammability rating • Guardring for overvoltage protection. Moisure Sensitivity Level 1 • Ultra high-speed switching. Built-in• bias resistors the configuration of an inverter circuit Silicon epitaxialenable planar chip, metal silicon junction. without• Lead-free connecting external input resistors parts meet environmental standards of The biasMIL-STD-19500 resistors consist /228of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the product for packing code suffix "G" • RoHS advantage of almost completely eliminating effects. Halogen free product for packing code suffixparasitic "H" Only the on/off conditions need to be set for operation, making Mechanical data device• design easy Epoxy : UL94-V0 rated flame retardant .008(0.20) .003(0.08) Electrical Characteristics @ 25к .055(1.40) .035(0.89) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M RATINGS Symbol Parameter Min Typ Max Unit Code --- 12 --VMarking 13 V 14 15 16 18 10 115 120 0.5 Input voltage (VCC=5V, IO=100A) I(off) ---VRRM --- 20 3.0 30 V VMaximum (VReverse I(on) O=0.2V, IVoltage O=5mA) 40 50 60 80 100 150 200 Recurrent Peak .004(0.10)MAX. VO(on) Output voltage (I= --0.1 0.3 V O/II 10mA/0.5mA) 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS II = Input current (VI 5V) ----0.36 mA Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 V DC A IO(off) Output current (VCC = =50V, VI 0) ----0.5 G DC current gain (V =5V, = I 5mA) 56 ----.020(0.50) I O O Maximum Average Forward Rectified Current IO 1.0 .012(0.30) R1 Input resistance 15.4 22 K¡ 28.6 RPeak Resistance ratio 8.3 ms single half sine-wave 0.8 1.0 1.2 Surge Current 2/R1 Forward 30 IFSM Transition superimposed on ratedfrequency load (JEDEC method) fT --250 --MHz Dimensions in inches and (millimeters) (VO=10V, IO=5mA, f=100MHz) 40 Typical Thermal Resistance (Note 2) RΘJA 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 Operating Temperature Range TJ Storage Temperature Range CHARACTERISTICS Suggested Solder Pad Layout FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL *Marking: 25 VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage - 65 to +175 TSTG @T A=125℃ IR 0.50 0.70 .031 .800 0.9 0.85 0.92 0.5 10 .035 .900 NOTES: .079 2.000 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. inches mm 2- Thermal Resistance From Junction to Ambient .037 .950 .037 .950 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTC124ECA THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Typical Characteristics Package outline Features ON Characteristics excellent power dissipation offers • Batch process design, 100 0.3 OFF Characteristics SOD-123H 10 (mA) 3 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. Ta=100℃ I0 1 OUTPUT CURRENT INPUT VOLTAGE VI(ON) (V) better reverse leakage current and thermal resistance. =0.2V to • Low profile surface mounted application inVOorder optimize board space. 30 • Low power loss, high efficiency. • High current capability, low forward voltage drop. 10 • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. 3 • Silicon epitaxial planar chip, metal silicon junction. Ta=25℃ • Lead-free parts meet environmental standards of Ta=100℃ MIL-STD-19500 /228 1 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.071(1.8) 0.056(1.4) 0.3 Ta=25℃ 0.1 0.03 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant 0.1 : Molded plastic, SOD-123H • Case 0.3 0.1 1 10 100 30 3 , • Terminals :Plated per MIL-STD-750 OUTPUTterminals, CURRENT I solderable (mA) VCC=5V 0.01 0.4 0.031(0.8) 0.8Typ. 1.2 1.6 INPUT VOLTAGE O VI(OFF) 0.031(0.8) 2.0 Typ. (V) Method 2026 • Polarity : Indicated by cathode band VO(ON) —— IO : Any • Mounting Position 1000 • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) GI 1000 IO/II=20 —— IO VO=5V (mV) 300 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS 100 Maximum Recurrent Peak Reverse Voltage Ta=25℃ VRRM 12 20 Maximum RMS Voltage VRMS 14 Maximum DC Blocking Voltage VDC 20 30 10 Peak Forward Surge Current 8.3 ms single half sine-wave 10 3 OUTPUT CURRENT Typical Thermal Resistance (Note 2) IFSM 30 IO (mA) 18 80 10 100 115 150 120 200 28 35 42 56 70 105 140 50 60 80 100 150 200 1.0 0.3 30 3 1 40 120 PD GI 400 10 5 IO 30 100 (mA) -55 to +150 —— Ta - 65 to +175 f=1MHz Ta=25℃ 350 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH VF (pF) Maximum Average Reverse Current at @T A=25℃ CO 16 60 40 -55 to +125 TSTG CHARACTERISTICS IR PD @T A=125℃ 6 POWER DISSIPATION OUTPUT CAPACITANCE 15 50 OUTPUT CURRENT TJ VR Maximum Forward Voltage at 1.0A DC 8 Rated DC Blocking Voltage 3 1 0.1 100 CJ —— 30 14 40 10 RΘJA Typical Junction Capacitance (Note 1) Operating Temperature Range CO Storage 10 Temperature Range 21 (mW) 1 13 30 IO Maximum Average Forward Rectified Current superimposed on rated load (JEDEC method) Ta=25℃ SYMBOL FM120-MH FM130-MH 30 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Ta=100℃ Marking Code Ta=100℃ 100 DC CURRENT GAIN OUTPUT VOLTAGE VO(ON) 300 at 25℃ ambient temperature unless otherwise specified. Ratings Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 4 2- Thermal Resistance From Junction to Ambient 2 0.50 0.70 0.92 10 250 200 0.9 0.85 0.5 300 DTC124ECA 150 100 50 0 0 2012-06 2012-0 4 8 12 REVERSE BIAS VOLTAGE 16 VR (V) 20 0 0 25 50 75 100 125 150 T (℃)ELECTRONIC COR WILLAS AMBIENT TEMPERATURE a WILLAS ELECTRONIC CORP.