TOSHIBA Preliminary GT5J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT5J321 High Power Switching Applications Fast Switching Applications ● ● ● ● ● The 4th generation Enhancement-mode Fast Switching(FS) :Operating frequency up to 150kHz(Reference) ● :t High speed f=0.05μs(typ.) ● Low switching loss :Eon=0.12mJ(typ.) :Eoff=0.10mJ(typ.) Low saturation voltage :VCE(sat)=2.0V(typ.) FRD included between emitter and collector Maximum Ratings (Ta=25℃) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Emitter-collector DC forward current 1ms Collector power dissipation (Tc=25℃) Junction temperature Storage temperature range Symbol Ratings Unit VCES VGES IC ICP IF IFM 600 ±20 5 10 5 10 V V PC 28 W Tj Tstg 150 -55～150 ℃ ℃ A A 2001-6- 1/6 TOSHIBA GT5J321 Preliminary Electrical Characteristics(Ta=25℃) Characteristic Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation volatage Input capacitance Turn-on delay time Rise Time Switching time Turn-on Time Turn-off delay time Fall Time Turn-off Time Switching loss Turn-on switching loss Turn-off switching loss Peak forward voltage Reverse recovery time Thermal resistance(IGBT) Thermal resistance(Diode) Symbol IGES ICES VGE(OFF) VCE(sat) Cies td(on) tr ton td(off) tf toff Eon Eoff VF trr Rth(j-c) Rth(j-c) Test Condition VGE=±20V,VCE=0 VCE=600V,VGE=0 IC=0.5mA,VCE=5V IC=5A,VGE=15V VCE=10V,VGE=0,f=1MHz Inductive Load VCC=300V,IC=5A VGG=+15V,RG=100Ω (Note 1) (Note 2) IF=5A,VGE=0 IF=5A,di/dt=-100A/μs ― ― Min Typ. Max Unit - - ±500 nA mA V V 3.5 - 2.0 950 0.05 0.03 0.15 0.13 0.05 0.20 0.12 0.10 - 1.0 6.5 2.45 0.15 2.0 200 pF μs mJ V ns 4.46 ℃/W 4.90 ℃/W 2001-6- 2/6 TOSHIBA GT5J321 Reference VCE - VGE IC - VCE Common emitte Tc = 25℃ 20 Common emitter Tc = 25℃ 15 Collector-emitter voltage VCE (V) 10 Collector current IC (A) 8 10 20 6 9 4 VGE = 8V 2 0 12 10 5 8 IC = 2A 4 0 0 1 2 3 4 Collector-emitter voltage V CE (V) 5 0 4 8 12 16 Gate-emitter voltage VGE (V) 20 Collector-emitter voltage VCE (V) Common emitter Tc = -40℃ 16 12 10 8 5 4 IC = 2A 0 Common emitter Tc = 125℃ 16 20 12 8 10 IC = 5A 4 0 0 4 8 12 16 Gate-emitter voltage V GE (V) 20 0 4 8 12 16 Gate-emitter voltage V GE (V) IC - VGE Collector-emitter saturation voltage VCE(sat) (V) 10 Common emitter VCE = 5V 8 Collector current IC (A) 20 VCE - VGE VCE - VGE 20 Collector-emitter voltage VCE (V) 16 6 4 125 Tc = 25℃ 2 -40 0 0 2 4 6 8 10 Gate-emitter voltage V GE (V) 12 14 20 VCE(sat) - Tc 4 10 Common emitter VGE = 15V 3 5 2 IC = 2A 1 0 -60 -20 20 60 100 140 Casetemperature tenpera (℃)(℃) cTc Case 2001-6- 3/6 TOSHIBA GT5J321 Reference Switching time onton ,td(on)- R-GRG Switching time , t,t r , rtd(on) td(on) tr 0.01 Common emitter VCC =300V VGG =15V IC =5A ：Tc=25℃ ：Tc=125℃ （Note1） 0.001 1 10 100 Gate resistance R G (Ω) tr 0.01 Common emitter VCC =300V ：Tc=25℃ VGG =15V ：Tc=125℃ R G =100Ω （Note１） 0.001 0 tf Common emitter VCC =300V VGG =15V IC =5A ：Tc=25℃ ：Tc=125℃ （Note1） 0.01 0.001 1 2 3 Collector current IC (A) 4 5 Switching time offt,offtf,t, tf,t Switc ih - IC- IC d(off) d(off) 1 Switching time toff, tf, td(off) (μs) Switching time toff, tf td(off) (μs) td(on) 1000 toff td(off) 0.1 ton 0.1 Switching timetofft,offtf,t ,td(off) Switching time , tfd(off) - R-G RG 1 toff 0.1 td(off) tf 0.01 Common emitter VC C=300V ：Tc=25℃ VG G=15V ：Tc=125℃ RG =100Ω （Note1） 0.001 1 10 100 Gate resistance RG (Ω) 1000 0 Switching loss Eon, Eoff - RG 1 Switching loss Eon , Eoff (mJ) Switching time ton, tr, td(on) (μs) ton 0.1 Switching time onton Switching time , t,t - I-C IC d(on) r, rt,t d(on) 1 Eon 0.1 1 Eoff Common emitter VCC =300V ：Tc=25℃ VGG =15V ：Tc=125℃ IC =5A （Note2） 0.01 2 3 Collector current IC (A) 4 5 Switching loss Eon, Eoff - IC 1 Switching loss Eon , Eoff (mJ) Switching time ton, tr, td(on) (μs) 1 Common emitter VCC =300V VGG =15V RG =100Ω ：Tc=25℃ ：Tc=125℃ （Note2） Eon 0.1 Eoff 0.01 1 10 100 Gate resistance RG (Ω) 1000 0 1 2 3 Collector current I C (A) 4 2001-6- 5 4/6 TOSHIBA GT5J321 Reference 100 10 Coes Common emitter VGE=0 f=1MHz Tc=25℃ Cres 1 400 300 16 12 VCE=300V 200 8 200 100 4 100 0 0.1 1 10 100 Collector-emitter voltage VCE (V) 1000 0 0 IF-VF 20 16 Reverse recovery current Irr (A) VGE=0 12 125℃ 8 -40℃ 4 10 20 30 Gate charge QG (nC) 40 trr, Irr - IF 100 1000 Common collector di/dt=-100A/μs VGE=0 ：Tc=25℃ ：Tc=125℃ Common collector Forward current IF (A) 20 Common emitter RL =60Ω Tc=25℃ trr 100 10 Irr Tc=25℃ 0 0.4 0.8 1.2 Forward voltage VF (V) 1.6 2 0 Ic max (continuous) 5 0 μ s* 1 0 0 μ s* 1 ms* 1 0 ms * * ：Single nonrepetitive pulse Tc=25℃ Curves must be dilated linearly with increase in temperature. Collector current IC (A) Ic max (pulsed)* 1 4 6 8 10 Reverse bias SOA 100 10 DC operation 2 Forward current IF (A) Safe area Safeoperating operati 100 Collector current IC (A) 10 1 0 10 1 Tj≦125℃ Tj≦125℃ VGE =15V VGE=15V R =100Ω RGG=13Ω 0.1 0.1 1 10 100 Collector-emitter voltage VCE (V) 1000 1 10 100 Collector-emitter voltage VCE (V) 2001-6- 1000 5/6 Reverse recovery time trr (ns) Collector emitter voltage VCE (V) Cies Capacitance C (pF) VCE, VGE - QG 500 Gate-emitter voltage VGE (V) C-VCE 1000 TOSHIBA GT5J321 Reference rth(t) - tw 2 Transient thermal resistance rth(t) (℃/W) 10 101 FRD 0 10 IGBT 10-1 10-2 10-3 10-4 10-5 TC = 25℃ 10-4 10-3 10-2 10-1 100 Pulse width twW(s) Pulse (s) 101 102 2001-6- 6/6