Preliminary Datasheet CR3AS-8UE R07DS1116EJ0100 Rev.1.00 Sep 05, 2013 400V - 3A - Thyristor Medium Power Use Features • Non-Insulated Type • Planar Type • IT (AV) : 3 A • VDRM : 400 V • IGT: 100 μA Outline RENESAS Package code: PRSS0004ZG-A (Package name: MP-3A) 4 2, 4 12 3 3 1 1. 2. 3. 4. Cathode Anode Gate Anode Maximum Ratings Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak off-state voltage Note1 Notes: 1. With gate to cathode resistance RGK = 1 kΩ Parameter Voltage class 8 400 500 400 Symbol VRRM VRSM VDRM Symbol Ratings Unit IT(RMS) IT(AV) 4 3 A A ITSM 40 A I2 t 8 A2s Peak gate power dissipation Average gate power dissipation PGM PG(AV) 1 0.2 W W Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Mass VFGM VRGM IFGM Tj Tstg — 6 6 0.5 – 40 to +125 – 40 to +125 0.32 V V A °C °C g RMS on-state current Average on-state current Surge on-state current I2t for fusing R07DS1116EJ0100 Rev.1.00 Sep 05, 2013 Unit V V V Conditions Commercial frequency, sine half wave 180° conduction, Tc=100°C 50Hz sine half wave, 1full cycle, peak value, non-repetitive Value corresponding to 1cycle of half wave 50Hz, surge on-state current Typical value Page 1 of 6 CR3AS-8UE Preliminary Electrical Characteristics Parameter Repetitive peak reverse current Symbol IRRM Min. — Typ. — Max. 1.0 Unit mA Repetitive peak off-state current IDRM — — 1.0 mA On-state voltage VTM — — 1.4 V Gate trigger voltage Gate non-trigger voltage VGT VGD — 0.2 — — 0.8 — V V Gate trigger current Holding current IGT IH 1 — — — 100 5.0 μA mA Thermal resistance Rth(j-c) — — 4.0 °C/W Test conditions Tj = 125°C, VRRM applied RGK = 1 kΩ Tj = 125°C, VDRM applied RGK = 1 kΩ Tj = 25°C, ITM = 4 A instantaneous value Tj = 25°C, VD = 6 V, IT = 0.1 A Tj = 125°C, VD = 1/2 VDRM RGK = 1 kΩ Tj = 25°C, VD = 6 V, IT = 0.1 A Tj = 25°C, VD = 12 V RGK = 1 kΩ Junction to case Note2 Notes: 2. The measurement point for case temperature is at anode tab. R07DS1116EJ0100 Rev.1.00 Sep 05, 2013 Page 2 of 6 CR3AS-8UE Preliminary Performance Curves Maximum On-State Characteristics Rated Surge On-State Current 100 100 Surge On-State Current (A) On-State Current (A) Tj = 25°C 10 1 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 70 60 50 40 30 20 10 0 1 10 Gate Trigger Current vs. Junction Temperature Gate Trigger Current (Tj = t°C) Gate Trigger Current (Tj = 25°C) × 100 (%) Gate Characteristics VGT = 0.8V PGM = 1W PG(AV) = 0.2W 1 IFGM = 0.5A IGT = 100μA VGD = 0.2V 0.1 1 10 100 10 4 VD = 6V RL = 60Ω 10 3 10 2 10 1 10 0 -40 Typical Example VD = 6V RL = 60Ω Gate Trigger Voltage (V) Typical Distribution 0.7 0.6 0.5 0.4 Typical Example 0.2 0.1 0.0 -40 0 40 80 120 Junction Temperature (°C) R07DS1116EJ0100 Rev.1.00 Sep 05, 2013 80 120 160 160 1000 Transient Thermal Impedance (°C/W) 1.0 0.8 40 Maximum Transient Thermal Impedance Characteristics (Junction to case, Junction to ambient) 1 10 100 1000 Gate Trigger Voltage vs. Junction Temperature 0.9 0 Junction Temperature (°C) Gate Current (mA) 0.3 100 Conduction Time (Cycles at 50Hz) VFGM = 6V Gate Voltage (V) 80 On-State Voltage (V) 10 0.1 0.01 90 Junction to ambient 100 10 Junction to case 1 0.001 0.01 0.1 1 Time (s) Page 3 of 6 CR3AS-8UE Preliminary Allowable Case Temperature vs. Average On-State Current (Single-Phase Harf Wave) Maximum Average Power Dissipation (Single-Phase Half Wave) 160 5 180° 120° 90° 4 Case Temperature (°C) Average Power Dissipation (W) 6 80° 3 θ = 30° 2 θ 360° 1 Resistive, inductive loads 0 0 1 2 3 4 140 θ 360° 120 Resistive, inductive loads 100 θ = 30° 80 60° 60 90° 40 120° 20 180° 0 5 0 Average On-State Current (A) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Half Wave) 140 θ 120 360° 100 80 60 θ = 30° 60° 40 90° 20 120° 180° 0 0.0 0.5 1.0 1.5 2.0 Average On-State Current (A) 160 RGK = 1 kΩ Typical Example 140 120 100 80 60 40 20 0 -40 0 40 80 120 Junction Temperature (°C) 102 160 Typical Example 140 100 80 60 40 101 Typical Distribution 100 20 0 VD = 12V RGK = 1KΩ Tj = 125°C RGK = 1KΩ 120 160 Holding Current vs. Junction Temperature Breakover Voltage vs. Rate of Rise of Off-State Voltage Holding Current (mA) Breakover Voltage (dv/dt = vV/μs) Breakover Voltage (dv/dt = 1V/μs) × 100 (%) Resistive, inductive loads Natural convection Aluminum substrate 25×25×t0.7mm Breakover Voltage vs. Junction Temperature Breakover Voltage (Tj = t°C) Breakover Voltage (Tj = 25°C) × 100 (%) Ambient Temperature (°C) 160 1 2 3 4 5 Average On-State Current (A) Typical Example 100 101 102 103 Rate of Rise of Off-State Voltage (V/μs) R07DS1116EJ0100 Rev.1.00 Sep 05, 2013 10-1 -40 0 40 80 120 160 Junction Temperature (°C) Page 4 of 6 Preliminary Repetitive Peak Reverse Voltage vs. Junction Temperature 160 Typical Example 140 120 100 80 60 40 20 0 -40 0 40 80 120 Junction Temperature (°C) R07DS1116EJ0100 Rev.1.00 Sep 05, 2013 Gate Trigger Current vs. Gate Current Pulse Width Gate Trigger Current (tw) Gate Trigger Current (DC) × 100 (%) Repetitive Peak Reverse Voltage (Tj = t°C) Repetitive Peak Reverse Voltage (Tj = 25°C) × 100 (%) CR3AS-8UE 160 104 Typical Example 103 102 VD = 6V RL = 60Ω Ta = 25°C 101 0 10 101 102 103 Gate Current Pulse Width (μs) Page 5 of 6 CR3AS-8UE Preliminary Package dimensions Previous Code TMP3 0.76 ± 0.2 Unit: mm 2.3 0.5 ± 0.2 0.1 ± 0.1 2.5Min 1Max 6.1 ± 0.2 6.6 5.3 ± 0.2 MASS[Typ.] 0.32g 1.4 ± 0.2 RENESAS Code PRSS0004ZG-A 1 ± 0.2 JEITA Package Code SC-63 10.4Max Package Name MP-3A 0.76 0.5 ± 0.2 1 2.3 2.3 ± 0.2 Ordering Information Orderable Part Number CR3AS-8UE-#B00 CR3AS-8UE-T13#B00 CR3AS-8UE-T23#B00 Packing Tube Embossed Tape Embossed Tape Quantity 75 pcs. 3000 pcs. 3000 pcs. 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