SANYO 2SK3098

2SK3098
Ordering number : EN8627
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
2SK3098
General-Purpose Switching Device
Applications
Features
•
•
•
Low ON-resistance.
High-speed switching.
15V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
VDSS
VGSS
Unit
400
V
±30
V
12
A
Allowable Power Dissipation
ID
IDP
PD
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Drain Current (Pulse)
Tc=25°C
48
A
85
W
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Symbol
Conditions
Ratings
min
typ
Unit
max
V(BR)DSS
IDSS
IGSS
ID=1mA, VGS=0V
VDS=320V, VGS=0V
VGS= ±30V, VDS=0V
VGS(off)
⏐yfs⏐
VDS=10V, ID=1mA
Input Capacitance
RDS(on)
Ciss
1150
pF
Output Capacitance
Coss
ID=6A, VGS=15V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
350
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
150
pF
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
VDS=10V, ID=6A
400
V
3
2.9
1.0
mA
±100
nA
4
5.8
0.43
V
S
0.55
Ω
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
www.semiconductor-sanyo.com/network
30310QB TK IM TA-1547 No.8627-1/3
2SK3098
Continued from preceding page.
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
Total Gate Charge
Qg
nC
td(on)
VDS=200V, ID=12A, VGS=10V
See specified Test Circuit.
40
Turn-ON Delay Time
20
ns
Rise Time
tr
See specified Test Circuit.
35
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
85
ns
Fall Time
tf
VSD
See specified Test Circuit.
45
Diode Forward Voltage
Package Dimensions
1.2
VDD=200V
4.5
10.2
5.1
1.3
D
15.1
PW=1μs
D.C.≤0.5%
(5.6)
18.0
G
1.2
14.0
2.7
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220
s
10
s
0μ
10
7
5
3
2
0.1
0.1
Operation in this
area is limited by RDS(on).
Tc=25°C
Single pulse
2 3
5 7 1.0
Allowable Power Dissipation, PD -- W
μ
10
ID=12A
s
1m s
m
n
10 ms atio
0
r
10 ope
DC
Drain Current, ID -- A
2.55
IDP=48A (PW≤10μs)
3
2
S
0.4
ASO
1.0
7
5
2SK3098
RGS
50Ω
P.G
1 2 3
2.55
ID=6A
RL=33.3Ω
VOUT
VGS=15V
6.3
2.7
3.6
0.8
3
2
V
Switching Time Test Circuit
unit : mm (typ)
7507-002
100
7
5
ns
IS=12A, VGS=0V
PD -- Tc
90
85
80
70
60
50
40
30
20
10
0
2 3
5 7 10
2 3
5 7 100
Drain-to-Source Voltage, VDS -- V
2 3
5 7
IT15420
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT15421
No.8627-2/3
2SK3098
Note on usage : Since the 2SK3098 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
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semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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This catalog provides information as of March, 2010. Specifications and information herein are subject
to change without notice.
PS No.8627-3/3