BCW 60 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN Power dissipation – Verlustleistung 1.3 ±0.1 2.5 max 3 Type Code 2 1 250 mW Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1 0.4 1.9 Dimensions / Maße in mm 1=B 2=E 3=C NPN SOT-23 (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C) BCW 60 Collector-Emitter-voltage B open VCE0 32 V Collector-Base-voltage E open VCB0 32 V Emitter-Base-voltage C open VEB0 5V Power dissipation – Verlustleistung Ptot 250 mW 1) Collector current – Kollektorstrom (DC) IC 100 mA Peak Collector current – Kollektor-Spitzenstrom ICM 200 mA Peak Base current – Basis-Spitzenstrom IBM 200 mA Junction temperature – Sperrschichttemperatur Tj 150/C Storage temperature – Lagerungstemperatur TS - 65…+ 150/C Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. Collector-Base cutoff current – Kollektorreststrom IE = 0, VCB = 32 V ICB0 – – 20 nA IE = 0, VCB = 32 V, Tj = 150/C ICB0 – – 20 :A IEB0 – – 20 nA Emitter-Base cutoff current – Emitterreststrom IC = 0, VEB = 4 V 2 Collector saturation volt. – Kollektor-Sättigungsspg. ) 1 IC = 10 mA, IB = 0.25 mA VCEsat 50 mV 350 mV IC = 50 mA, IB = 1.25 mA VCEsat 100 mV 550 mV ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2% 38 01.11.2003 General Purpose Transistors BCW 60 Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. Base saturation voltage – Basis-Sättigungsspannung 1) IC = 10 mA, IB = 0.25 mA VBEsat 600 mV – 850 mV IC = 50 mA, IB = 1.25 mA VBEsat 700 mV – 1050 mV DC current gain – Kollektor-Basis-Stromverhältnis 1) VCE = 5 V, IC = 10 :A VCE = 5 V, IC = 2 mA VCE = 1 V, IC = 50 mA BCW 60B hFE 20 – – BCW 60C hFE 40 – – BCW 60D hFE 100 – – BCW 60B hFE 180 – 310 BCW 60C hFE 250 – 460 BCW 60D hFE 380 – 630 BCW 60B hFE 70 – – BCW 60C hFE 90 – – BCW 60D hFE 100 – – Base-Emitter voltage – Basis-Emitter-Spannung 1) VCE = 5 V, IC = 10 :A VBEon – 520 mV – VCE = 5 V, IC = 2 mA VBEon 550 mV 650 mV 700 mV VCE = 1 V, IC = 50 mA VBEon – 780 mV – 100 MHz 250 MHz – – 1.7 pF – CEB0 – 11 pF – F – 2 dB 6 dB Gain-Bandwidth Product – Transitfrequenz VCE = 5 V, IC = 10 mA, f = 100 MHz fT Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 10 V, IE = ie = 0, f = 1 MHz CCB0 Emitter-Base Capacitance – Emitter-Basis-Kapazität VEB = 0.5 V, IC = ic = 0, f = 1 MHz Noise figure – Rauschzahl VCE = 5 V, IC = 200 :A, RG = 2 kS, f = 1 kHz, )f = 200 Hz Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren Marking – Stempelung BCW 60B = AB 420 K/W 2) RthA BCW 61 series BCW 60C = AC BCW 60D = AD ) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 01.11.2003 1 2 39