NXP BTA416Y-600B 16 a three-quadrant triacs, insulated, high commutation, high temperature Datasheet

BTA416Y series B and C
16 A Three-quadrant triacs, insulated, high commutation, high
temperature
Rev. 01 — 3 October 2007
Product data sheet
1. Product profile
1.1 General description
Passivated, new generation, high commutation triacs in an internally insulated TO-220
plastic package.
1.2 Features
n Very high commutation performance
n Isolated mounting base
n High operating junction temperature
n High immunity to dV/dt
n 2500 V RMS isolation voltage
1.3 Applications
n Heating and cooking appliances
n High power motor control e.g. vacuum
cleaners
n Solid-state relays
n Non-linear rectifier-fed motor loads
n Electronic thermostats for heating and
cooling loads
1.4 Quick reference data
n VDRM ≤ 600 V (BTA416Y-600B and C)
n VDRM ≤ 800 V (BTA416Y-800B and C)
n ITSM ≤ 160 A (t = 20 ms)
n IGT ≤ 50 mA (BTA416Y series B)
n IGT ≤ 35 mA (BTA416Y series C)
n IT(RMS) ≤ 16 A
2. Pinning information
Table 1.
Pinning
Pin
Description
1
main terminal 1 (T1)
Simplified outline
Symbol
2
main terminal 2 (T2)
T2
3
gate (G)
sym051
mb
mounting base; isolated
mb
T1
G
1 2 3
SOT78D (TO-220)
BTA416Y series B and C
NXP Semiconductors
16 A 3-quadrant triacs, insulated, high commutation, high temperature
3. Ordering information
Table 2.
Ordering information
Type number
Package
BTA416Y-600B
Name
Description
TO-220
plastic single-ended package; isolated heatsink mounted; 1 mounting hole; SOT78D
3-lead TO-220
BTA416Y-600C
Version
BTA416Y-800B
BTA416Y-800C
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDRM
Parameter
Conditions
repetitive peak off-state voltage
BTA416Y-600B; BTA416Y-600C
[1]
Min
Max
Unit
-
600
V
BTA416Y-800B; BTA416Y-800C
-
800
V
-
16
A
t = 20 ms
-
160
A
t = 16.7 ms
-
176
A
t = 10 ms
-
128
A2s
ITM = 20 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
-
100
A/µs
-
2
A
-
5
W
-
0.5
W
IT(RMS)
RMS on-state current
full sine wave; Tmb ≤ 108 °C; see
Figure 4 and 5
ITSM
non-repetitive peak on-state current
full sine wave; Tj = 25 °C prior to
surge; see Figure 2 and 3
I2t
I2t
dIT/dt
rate of rise of on-state current
IGM
peak gate current
PGM
peak gate power
PG(AV)
average gate power
Tstg
storage temperature
−40
+150
°C
Tj
junction temperature
-
150
°C
[1]
for fusing
over any 20 ms period
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 15 A/µs.
BTA416Y_SER_B_C_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 3 October 2007
2 of 12
BTA416Y series B and C
NXP Semiconductors
16 A 3-quadrant triacs, insulated, high commutation, high temperature
003aab816
20
Ptot
(W)
conduction
angle
(degrees)
form
factor
a
30
60
90
120
180
4
2.8
2.2
1.9
1.57
16
12
α = 180°
120°
90°
α
60°
30°
8
4
0
0
2
4
6
8
10
12
14
16 I
18
T(RMS) (A)
α = conduction angle
Fig 1. Total power dissipation as a function of RMS on-state current; maximum values
003aab817
180
ITSM
(A)
150
120
90
ITSM
IT
60
t
30
1/f
Tj(init) = 25 °C max
0
1
102
10
n (number of cycles)
103
f = 50 Hz
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA416Y_SER_B_C_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 3 October 2007
3 of 12
BTA416Y series B and C
NXP Semiconductors
16 A 3-quadrant triacs, insulated, high commutation, high temperature
003aab818
103
ITSM
(A)
(1)
102
ITSM
IT
t
tp
Tj(init) = 25 °C max
10
10-5
10-4
10-3
10-2
tp (s)
10-1
tp ≤ 20 ms
(1) dIT/dt limit
Fig 3. Non-repetitive peak on-state current as a function of pulse duration; maximum values
003aab819
60
IT(RMS)
(A)
50
003aab820
20
IT(RMS)
(A)
16
40
12
30
8
20
4
10
0
10-2
10-1
1
10
surge duration (s)
0
-50
0
50
100
150
Tmb (°C)
f = 50 Hz;
Tmb = 108 °C
Fig 4. RMS on-state current as a function of surge
duration; maximum values
Fig 5. RMS on-state current as a function of mounting
base temperature; maximum values
BTA416Y_SER_B_C_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 3 October 2007
4 of 12
BTA416Y series B and C
NXP Semiconductors
16 A 3-quadrant triacs, insulated, high commutation, high temperature
5. Thermal characteristics
Table 4.
Thermal characteristics
Symbol
Parameter
Rth(j-mb)
Rth(j-a)
Conditions
Min
Typ
Max
Unit
thermal resistance from junction to full cycle; see Figure 6
mounting base
-
-
1.9
K/W
thermal resistance from junction to in free air
ambient
-
60
-
K/W
003aab821
10
Zth(j-mb)
(K/W)
1
10−1
P
10−2
tp
10−3
10−5
10−4
10−3
10−2
10−1
1
t
10
tp (s)
Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse duration
6. Isolation characteristics
Table 5.
Isolation limiting values and characteristics
Th = 25 °C unless otherwise specified.
Symbol
Parameter
Visol(RMS)
Cisol
Conditions
Min
Typ
Max
Unit
RMS isolation voltage from all three terminals to
external heatsink; f = 50 Hz to
60 Hz; sinusoidal waveform;
RH ≤ 65 %; clean and dust free
-
-
2500
V
isolation capacitance
-
10
-
pF
from pin 2 to external heatsink;
f = 1 MHz
BTA416Y_SER_B_C_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 3 October 2007
5 of 12
BTA416Y series B and C
NXP Semiconductors
16 A 3-quadrant triacs, insulated, high commutation, high temperature
7. Static characteristics
Table 6.
Static characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
IGT
IL
gate trigger
current
Conditions
BTA416Y-600B
BTA416Y-800B
BTA416Y-600C
BTA416Y-800C
Unit
Min
Typ
Max
Min
Typ
Max
T2+ G+
2
-
50
2
-
35
mA
T2+ G−
2
-
50
2
-
35
mA
T2− G−
2
-
50
2
-
35
mA
T2+ G+
-
-
60
-
-
50
mA
T2+ G−
-
-
90
-
-
60
mA
VD = 12 V; IT = 0.1 A; see Figure 8
latching current VD = 12 V; IGT = 0.1 A; see Figure 10
-
-
60
-
-
50
mA
IH
holding current
VD = 12 V; IGT = 0.1 A; see Figure 11
T2− G−
-
-
60
-
-
35
mA
VT
on-state
voltage
IT = 20 A; see Figure 9
-
1.2
1.5
-
1.2
1.5
V
VGT
gate trigger
voltage
VD = 12 V; IT = 0.1 A; see Figure 7
-
0.7
1.5
-
0.7
1.5
V
VD = 400 V; IT = 0.1 A; Tj = 150 °C
0.25
0.4
-
0.25
0.4
-
V
off-state current VD = VDRM(max); Tj = 125 °C
-
0.1
0.5
-
0.1
0.5
mA
VD = VDRM(max); Tj = 150 °C
-
0.4
2
-
0.4
2
mA
ID
BTA416Y_SER_B_C_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 3 October 2007
6 of 12
BTA416Y series B and C
NXP Semiconductors
16 A 3-quadrant triacs, insulated, high commutation, high temperature
8. Dynamic characteristics
Table 7.
Dynamic characteristics
Symbol
Parameter
Conditions
BTA416Y-600B
BTA416Y-800B
Min
dVD/dt
rate of rise of
off-state voltage
dIcom/dt
Max
Min
Typ
Max
Unit
VDM = 0.67 × VDRM(max); exponential
waveform; gate open circuit
Tj = 125 °C
1000 -
-
500
-
-
V/µs
Tj = 150 °C
600
-
-
300
-
-
V/µs
rate of change of VDM = 400 V; IT(RMS) = 16 A; without
commutating
snubber; gate open circuit
current
Tj = 125 °C
15
-
-
10
-
-
A/ms
Tj = 150 °C
6
-
-
4
-
-
A/ms
-
2
-
-
2
-
µs
gate-controlled
turn-on time
tgt
Typ
BTA416Y-600C
BTA416Y-800C
ITM = 20 A; VD = VDRM(max); IG = 0.1 A;
dIG/dt = 5 A/µs
001aag168
1.6
001aag165
3
VGT
IGT
VGT(25°C)
IGT(25°C)
1.2
2
(1)
(2)
(3)
0.8
0.4
−50
1
0
50
100
Tj (°C)
150
0
−50
0
50
100
Tj (°C)
150
(1) T2− G−
(2) T2+ G−
(3) T2+ G+
Fig 7. Normalized gate trigger voltage as a function of
junction temperature
Fig 8. Normalized gate trigger current as a function of
junction temperature
BTA416Y_SER_B_C_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 3 October 2007
7 of 12
BTA416Y series B and C
NXP Semiconductors
16 A 3-quadrant triacs, insulated, high commutation, high temperature
003aab822
50
001aag166
3
IT
(A)
IL
IL(25°C)
40
2
30
(1)
20
(2)
(3)
1
10
0
0
0.5
1
1.5
VT (V)
0
−50
2
0
50
100
150
Tj (°C)
Vo = 1.086 V
Rs = 0.017 Ω
(1) Tj = 150 °C; typical values
(2) Tj = 150 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig 9. On-state current as a function of on-state
voltage
Fig 10. Normalized latching current as a function of
junction temperature
001aag167
3
IH
IH(25°C)
2
1
0
−50
0
50
100
Tj (°C)
150
Fig 11. Normalized holding current as a function of junction temperature
BTA416Y_SER_B_C_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 3 October 2007
8 of 12
BTA416Y series B and C
NXP Semiconductors
16 A 3-quadrant triacs, insulated, high commutation, high temperature
9. Package outline
Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220
SOT78D
A
E
A1
p
mounting
base
q
D1
D
L1
Q
b2
L
b1
1
2
3
w
c
M
b
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
b1
b2
c
D
D1
ref
E
e
L
L1
ref
p
Q
q
w
mm
4.7
4.3
1.40
1.25
0.9
0.6
1.4
1.1
1.72
1.32
0.6
0.4
16.0
15.2
6.5
10.3
9.7
2.54
14.0
12.8
3.0
3.7
3.5
2.6
2.2
3.0
2.7
0.2
OUTLINE
VERSION
SOT78D
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
07-04-04
07-07-10
TO-220
Fig 12. Package outline SOT78D (3-lead TO-220)
BTA416Y_SER_B_C_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 3 October 2007
9 of 12
BTA416Y series B and C
NXP Semiconductors
16 A 3-quadrant triacs, insulated, high commutation, high temperature
10. Revision history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BTA416Y_SER_B_C_1
20071003
Product data sheet
-
-
BTA416Y_SER_B_C_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 3 October 2007
10 of 12
BTA416Y series B and C
NXP Semiconductors
16 A 3-quadrant triacs, insulated, high commutation, high temperature
11. Legal information
11.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
11.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
11.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a NXP Semiconductors product can reasonably be expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
BTA416Y_SER_B_C_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 3 October 2007
11 of 12
BTA416Y series B and C
NXP Semiconductors
16 A 3-quadrant triacs, insulated, high commutation, high temperature
13. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
11.1
11.2
11.3
11.4
12
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 5
Isolation characteristics . . . . . . . . . . . . . . . . . . 5
Static characteristics. . . . . . . . . . . . . . . . . . . . . 6
Dynamic characteristics . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 3 October 2007
Document identifier: BTA416Y_SER_B_C_1
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