VISHAY S330D_10

S330D
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Controlled avalanche characteristics
• Low reverse current
• Compliant to RoHS directive 2002/95/EC and
in accordance to WEEE 2002/96/EC
949539
• Halogen-free according to IEC 61249-2-21
definition
MECHANICAL DATA
APPLICATIONS
Case: SOD-57
• High voltage
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
• Power supplies
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 369 mg
PARTS TABLE
PART
TYPE DIFFERENTIATION
PACKAGE
S330D
VR = 1000 V; IFAV = 2 A
SOD-57
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage = repetitive peak
reverse voltage
Peak forward surge current
Average forward current
Pulse energy in avalanche mode, non
repetitive (inductive load switch off)
TEST CONDITION
PART
SYMBOL
VALUE
UNIT
See electrical characteristics
S330D
VR = VRRM
1000
V
tp = 10 ms, half sine wave
IFSM
50
A
Tamb = 50 °C, I = 10 mm
IFAV
2
A
I(BR)R = 1 A, inductive load
ER
20
mJ
Tj = Tstg
- 55 to + 175
°C
Junction and storage
temperature range
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
TEST CONDITION
SYMBOL
VALUE
UNIT
Lead length l = 10 mm, TL = constant
RthJA
45
K/W
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Reverse current
Breakdown voltage
Reverse recovery time
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TEST CONDITION
SYMBOL
MIN.
TYP.
MAX
UNIT
IF = 1 A
PART
VF
-
-
1
V
IF = 10 A
VF
-
-
1.65
V
VR = VRRM
IR
-
-
5
μA
μA
VR = VRRM, Tj = 100 °C
IR
-
-
50
IR = 100 μA
V(BR)R
1300
-
-
V
IF = 0.5 A, IR = 1 A, iR = 0.25 A
trr
-
-
4
μs
For technical questions within your region, please contact one of the following:
Dio[email protected], [email protected], [email protected]
Document Number: 86053
Rev. 1.6, 25-Aug-10
S330D
Standard Avalanche Sinterglass
Diode
Vishay Semiconductors
RthJA - Thermal Resist. Junction/Ambeint (K/W)
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
40
120
35
100
30
CD (pF)
80
60
l
25
20
l
15
40
10
20
5
T L = constant
0
0
5
10
15
20
25
0
0.1
30
IFAV - Average Forward Current (A)
10
3.0
100
2.5
10
RthJA = 45 K/W
I = 10 mm
TJT= 175 °C
IF (A)
1
1.5
100
VR (V)
Fig. 4 - Diode Capacitance vs. Reverse Voltage
Fig. 1 - Typ. Thermal Resistance vs. Lead Length
2.0
1
17214
I - Lead Length (mm)
949090
TJ = 25 °C
0.1
1.0
0.01
0.5
0.0
0.001
0
20
40
60
80
100 120 140 160 180
0.0
0.5
17215
Tamb - Ambient Temperature (°C)
17212
1.0
1.5 2.0
VF (A)
2.5
3.0
3.5 4.0
Fig. 5 - Diode Capacitance vs. Reverse Voltage
Fig. 2 - Max. Average Forward Current vs. Ambient Temperature
0.5
10 000
0.45
0.4
1000
0.35
PR - Limit
at 100 % VR
PR (W)
IR (μA)
0.3
100
0.25
0.2
0.15
10
0.1
1
25
PR - Limit
at 80 % VR
0.05
50
17213
75
100
125
150
175
Tj (°C)
Fig. 3 - Reverse Current vs. Junction Temperature
Document Number: 86053
Rev. 1.6, 25-Aug-10
0
17216
25
50
75
100
125
150
175
T J (°C)
Fig. 6 - Max. Reverse Power Dissipation vs. Junction Temperature
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
169
S330D
Vishay Semiconductors
Standard Avalanche Sinterglass
Diode
3.6 (0.142) max.
0.82 (0.032) max.
PACKAGE DIMENSIONS in millimeters (inches): SOD-57
26 (1.024) min.
4 (0.157) max.
26 (1.024) min.
20543
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170
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 86053
Rev. 1.6, 25-Aug-10
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Vishay
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Document Number: 91000
Revision: 11-Mar-11
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