AUIRFR5305 AUIRFU5305 AUTOMOTIVE GRADE Features Advanced Planar Technology Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * VDSS RDS(on) Package Type AUIRFU5305 I-Pak AUIRFR5305 D-Pak max. 0.065 ID -31A D D Description Specifically designed for Automotive applications, this Cellular Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. Base part number -55V G S G I-Pak AUIRFU5305 D-Pak AUIRFR5305 G Gate D Drain Standard Pack Form Quantity Tube 75 Tube 75 Tape and Reel Left 3000 S D S Source Orderable Part Number AUIRFU5305 AUIRFR5305 AUIRFR5305TRL Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Symbol Parameter Max. ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -31 ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ -10V Pulsed Drain Current Maximum Power Dissipation -22 -110 110 VGS EAS IAR EAR dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Thermal Resistance Symbol RJC RJA RJA Parameter Junction-to-Case Junction-to-Ambient ( PCB Mount) Junction-to-Ambient Units A W 0.71 ± 20 280 -16 11 -5.0 -55 to + 175 W/°C V mJ A mJ V/ns °C 300 Typ. Max. Units ––– ––– ––– 1.4 50 110 °C/W HEXFET® is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-10-12 AUIRFR/U5305 Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Trans conductance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions -55 ––– ––– V VGS = 0V, ID = -250µA ––– -0.034 ––– V/°C Reference to 25°C, ID = -1mA ––– ––– 0.065 VGS = -10V, ID = -16A -2.0 ––– -4.0 V VDS = VGS, ID = -250µA 8.0 ––– ––– S VDS = -25V, ID = -16A ––– ––– -25 VDS = -55 V, VGS = 0V µA ––– ––– -250 VDS = -44V,VGS = 0V,TJ =150°C ––– ––– -100 VGS = -20V nA ––– ––– 100 VGS = 20V Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qgs Qgd td(on) tr td(off) tf Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 14 66 39 63 63 13 29 ––– ––– ––– ––– LD Internal Drain Inductance ––– 4.5 ––– LS Internal Source Inductance ––– 7.5 ––– ––– ––– ––– 1200 520 250 ––– ––– ––– Min. Typ. Max. Units ––– ––– -31 ––– ––– -110 ––– ––– ––– ––– 71 170 -1.3 110 250 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage Reverse Recovery Time trr Qrr Reverse Recovery Charge ID = -16A nC VDS = -44V VGS = -10V, See Fig 6 and 13 VDD = -28V ID = -16A ns RG = 6.8 RD = 1.6See Fig 10 Between lead, 6mm (0.25in.) nH from package and center of die contact VGS = 0V pF VDS = -25V ƒ = 1.0MHz, See Fig. 5 Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25°C,IS = -16A,VGS = 0V ns TJ = 25°C ,IF = -16A nC di/dt = 100A/µs Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) VDD = -25V, starting TJ = 25°C, L = 2.1mH, RG = 25, IAS = -16A. (See Fig.12) ISD -16A, di/dt -280A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 300µs; duty cycle 2%. This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact . Uses IRF5305 data and test conditions. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 Uses typical socket mount. 2 2015-10-12 AUIRFR/U5305 1000 1000 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V 100 10 -4.5V 20µs PULSE WIDTH Tc = 25°C A 1 0.1 1 10 100 10 -4.5V R DS(on) , Drain-to-Source On Resistance (Normalized) -ID , Drain-to-Source Current (A) 2.0 TJ = 25°C TJ = 175°C 10 V DS = -25V 20µs PULSE WIDTH 6 7 8 9 -VGS , Gate-to-Source Voltage (V) Fig. 3 Typical Transfer Characteristics 3 10 A 100 Fig. 2 Typical Output Characteristics 100 5 1 -VDS , Drain-to-Source Voltage (V) Fig. 1 Typical Output Characteristics 1 20µs PULSE WIDTH TC = 175°C 1 0.1 100 -VDS , Drain-to-Source Voltage (V) 4 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP -ID , Drain-to-Source Current (A) -ID , Drain-to-Source Current (A) TOP 10 A I D = -27A 1.5 1.0 0.5 V GS = -10V 0.0 -60 -40 -20 0 20 40 60 A 80 100 120 140 160 180 TJ , Junction Temperature (°C) Fig. 4 Normalized On-Resistance vs. Temperature 2015-10-12 AUIRFR/U5305 C, Capacitance (pF) 2000 Ciss 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd -VGS , Gate-to-Source Voltage (V) 2500 Coss 1500 1000 Crss 500 0 1 10 100 A I D = -16A V DS = -44V V DS = -28V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 -VDS , Drain-to-Source Voltage (V) 20 30 40 50 60 A Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) -ID , Drain Current (A) -ISD , Reverse Drain Current (A) 10 100 TJ = 175°C TJ = 25°C VGS = 0V 10 0.4 0.8 1.2 1.6 -VSD , Source-to-Drain Voltage (V) Fig. 7 Typical Source-to-Drain Diode Forward Voltage 4 A 2.0 100 100µs 10 1ms 10ms TC = 25°C TJ = 175°C Single Pulse 1 1 A 10 100 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 2015-10-12 AUIRFR/U5305 35 -ID , Drain Current (A) 30 25 20 15 10 Fig 10a. Switching Time Test Circuit 5 0 25 50 75 100 125 TC , Case Temperature 150 175 ( °C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10b. Switching Time Waveforms Thermal Response (Z thJC) 10 1 D = 0.50 0.20 0.10 0.1 0.01 0.00001 PDM 0.05 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x ZthJC + TC 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 2015-10-12 AUIRFR/U5305 Fig 12a. Unclamped Inductive Test Circuit EAS , Single Pulse Avalanche Energy (mJ) 700 TOP 600 BOTTOM ID -6.6A -11A -16A 500 400 300 200 100 0 VDD = -25V 25 50 75 100 125 150 A 175 Starting TJ , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Fig 13a. Gate Charge Waveform 6 Fig 13b. Gate Charge Test Circuit 2015-10-12 AUIRFR/U5305 Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs 7 2015-10-12 AUIRFR/U5305 D-Pak (TO-252AA) Package Outline (Dimensions are shown in millimeters (inches)) D-Pak (TO-252AA) Part Marking Information Part Number AUFR5305 YWWA IR Logo XX Date Code Y= Year WW= Work Week XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 2015-10-12 AUIRFR/U5305 I-Pak (TO-251AA) Package Outline (Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information Part Number AUFU5305 YWWA IR Logo XX Date Code Y= Year WW= Work Week XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 2015-10-12 AUIRFR/U5305 D-Pak (TO-252AA) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 2015-10-12 AUIRFR/U5305 Qualification Information Qualification Level Moisture Sensitivity Level Machine Model ESD Human Body Model Charged Device Model RoHS Compliant Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. D-Pak MSL1 I-Pak Class M2 (+/- 200V)† AEC-Q101-002 Class H1B (+/- 1000V)† AEC-Q101-001 Class C5 (+/- 1125V)† AEC-Q101-005 Yes † Highest passing voltage. Revision History Date 10/12/2015 Comments Updated datasheet with corporate template Corrected ordering table on page 1. 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Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 11 2015-10-12