NXP BYV32E-150 Dual rugged ultrafast rectifier diode, 20 a, 150 v Datasheet

BYV32E-150
Dual rugged ultrafast rectifier diode, 20 A, 150 V
Rev. 04 — 2 March 2009
Product data sheet
1. Product profile
1.1 General description
Ultrafast dual epitaxial rectifier diode in a SOT78 (TO-220AB) plastic package.
1.2 Features and benefits
„ High reverse voltage surge capability
„ High thermal cycling performance
„ Soft recovery characteristic minimizes
power consuming oscillations
„ Low thermal resistance
„ Very low on-state loss
1.3 Applications
„ Output rectifiers in high-frequency
switched-mode power supplies
1.4 Quick reference data
Table 1.
Quick reference
Symbol Parameter
Conditions
Min
Typ
Max
Unit
-
-
150
V
VRRM
repetitive peak
reverse voltage
IO(AV)
average output
current
square-wave pulse; δ = 0.5;
Tmb ≤ 115 °C; both diodes
conducting; see Figure 1;
see Figure 2
-
-
20
A
IRRM
repetitive peak
reverse current
tp = 2 µs; δ = 0.001
-
-
0.2
A
VESD
electrostatic
discharge voltage
HBM; C = 250 pF; R = 1.5
kΩ; all pins
-
-
8
kV
IF = 1 A; VR = 30 V;
dIF/dt = 100 A/µs;
Tj = 25 °C; ramp recovery;
see Figure 5
-
20
25
ns
IR = 0.5 A; IF = 1 A;
Tj = 25 °C; step recovery;
measured at reverse current
= 0.25 A; see Figure 6
-
10
20
ns
IF = 8 A; Tj = 150 °C; see
Figure 4
-
0.72
0.85
V
Dynamic characteristics
trr
reverse recovery
time
Static characteristics
VF
forward voltage
BYV32E-150
NXP Semiconductors
Dual rugged ultrafast rectifier diode, 20 A, 150 V
2. Pinning information
Table 2.
Pinning information
Pin
Symbol
Description
1
A1
anode 1
2
K
cathode
3
A2
anode 2
mb
K
mounting base; cathode
Simplified outline
Graphic symbol
mb
A1
A2
K
sym125
1 2 3
SOT78
(TO-220AB; SC-46)
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BYV32E-150
TO-220AB;
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78
SC-46
TO-220AB
BYV32E-150_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 2 March 2009
2 of 9
BYV32E-150
NXP Semiconductors
Dual rugged ultrafast rectifier diode, 20 A, 150 V
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VRRM
Conditions
Min
Max
Unit
repetitive peak reverse
voltage
-
150
V
VRWM
crest working reverse
voltage
-
150
V
VR
reverse voltage
DC
-
150
V
IO(AV)
average output current
square-wave pulse; δ = 0.5; Tmb ≤ 115 °C; both
diodes conducting; see Figure 1; see Figure 2
-
20
A
IFRM
repetitive peak forward
current
δ = 0.5; tp = 25 µs; Tmb ≤ 115 °C; per diode
-
20
A
IFSM
non-repetitive peak
forward current
tp = 10 ms; sine-wave pulse; Tj(init) = 25 °C; per
diode
-
125
A
tp = 8.3 s; sine-wave pulse; Tj(init) = 25 °C; per
diode
-
137
A
IRRM
repetitive peak reverse
current
δ = 0.001; tp = 2 µs
-
0.2
A
IRSM
non-repetitive peak
reverse current
tp = 100 µs
-
0.2
A
Tstg
storage temperature
-40
150
°C
Tj
junction temperature
-
150
°C
VESD
electrostatic discharge
voltage
-
8
kV
HBM; C = 250 pF; R = 1.5 kΩ; all pins
003aac978
12
δ=1
a = 1.57
Ptot
(W)
003aac979
15
Ptot
(W)
1.9
0.5
2.2
8
10
2.8
0.2
4.0
0.1
4
5
0
0
0
4
8
12
0
IF(AV) (A)
Fig 1.
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
Fig 2.
10
IF(AV) (A)
15
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
BYV32E-150_4
Product data sheet
5
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 2 March 2009
3 of 9
BYV32E-150
NXP Semiconductors
Dual rugged ultrafast rectifier diode, 20 A, 150 V
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Rth(j-mb)
Rth(j-a)
Conditions
Min
Typ
Max
Unit
thermal resistance from with heatsink compound; both diodes
junction to mounting
conducting
base
with heatsink compound; per diode; see
Figure 3
-
-
1.6
K/W
-
-
2.4
K/W
thermal resistance from
junction to ambient
-
60
-
K/W
003aac980
10
Zth(j-mb)
(K/W)
1
10−1
δ=
P
tp
T
10−2
t
tp
10−3
10−6
Fig 3.
T
10−5
10−4
10−3
10−2
10−1
1
10
tp (s)
Transient thermal impedance from junction to mounting base as a function of pulse width
6. Characteristics
Table 6.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
IF = 8 A; Tj = 150 °C; see Figure 4
-
0.72
0.85
V
IF = 20 A; Tj = 25 °C
-
1
1.15
V
Static characteristics
VF
IR
forward voltage
reverse current
VR = 150 V; Tj = 100 °C
-
0.2
0.6
mA
VR = 150 V; Tj = 25 °C
-
6
30
µA
Dynamic characteristics
Qr
recovered charge
IF = 2 A; VR = 30 V; dIF/dt = 20 A/µs;
Tj = 25 °C
-
8
12.5
nC
trr
reverse recovery time
IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs;
ramp recovery; Tj = 25 °C; see Figure 5
-
20
25
ns
IF = 1 A; IR = 0.5 A; step recovery;
measured at reverse current = 0.25 A;
Tj = 25 °C; see Figure 6
-
10
20
ns
IF = 1 A; dIF/dt = 10 A/µs; see Figure 7
-
-
1
V
VFR
forward recovery
voltage
BYV32E-150_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 2 March 2009
4 of 9
BYV32E-150
NXP Semiconductors
Dual rugged ultrafast rectifier diode, 20 A, 150 V
003aac981
32
dlF
IF
dt
IF
(A)
24
trr
(1)
16
(2)
time
(3)
25 %
100 %
Qr
8
IRM
IR
003aac562
0
0
0.4
0.8
1.2
1.6
Fig 5.
VF (V)
Fig 4.
Reverse recovery definitions; ramp recovery
Forward current as a function of forward
voltage
IF
IF
IF
trr
time
time
0.25 x IR
VF
Qr
VFRM
IR
IR
VF
003aac563
time
Fig 6.
Reverse recovery definitions; step recovery
001aab912
Fig 7.
Forward recovery definitions
BYV32E-150_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 2 March 2009
5 of 9
BYV32E-150
NXP Semiconductors
Dual rugged ultrafast rectifier diode, 20 A, 150 V
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
E
A
A1
p
q
mounting
base
D1
D
L1(1)
L2(1)
Q
L
b1(2)
(3×)
b2(2)
(2×)
1
2
3
b(3×)
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
b1(2)
b2(2)
c
D
D1
E
e
L
L1(1)
L2(1)
max.
p
q
Q
mm
4.7
4.1
1.40
1.25
0.9
0.6
1.6
1.0
1.3
1.0
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
2.54
15.0
12.8
3.30
2.79
3.0
3.8
3.5
3.0
2.7
2.6
2.2
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
OUTLINE
VERSION
SOT78
Fig 8.
REFERENCES
IEC
JEDEC
JEITA
3-lead TO-220AB
SC-46
EUROPEAN
PROJECTION
ISSUE DATE
08-04-23
08-06-13
Package outline SOT78 (TO-220AB)
BYV32E-150_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 2 March 2009
6 of 9
BYV32E-150
NXP Semiconductors
Dual rugged ultrafast rectifier diode, 20 A, 150 V
8. Revision history
Table 7.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BYV32E-150_4
20090302
Product data sheet
-
BYV32E_SERIES_3
Modifications:
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•
•
•
Legal texts have been adapted to the new company name where appropriate.
Package outline updated.
Type number BYV32E-150 separated from data sheet BYV32E_SERIES_3
BYV32E_SERIES_3
20010301
Product specification
-
BYV32E_SERIES_2
BYV32E_SERIES_2
19980701
Product specification
-
BYV32EB_SERIES_1
BYV32EB_SERIES_1
19960801
Product specification
-
-
BYV32E-150_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 2 March 2009
7 of 9
BYV32E-150
NXP Semiconductors
Dual rugged ultrafast rectifier diode, 20 A, 150 V
9. Legal information
9.1
Data sheet status
Document status [1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term 'short data sheet' is explained in section "Definitions".
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
9.2
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
9.3
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BYV32E-150_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 2 March 2009
8 of 9
BYV32E-150
NXP Semiconductors
Dual rugged ultrafast rectifier diode, 20 A, 150 V
11. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
9.1
9.2
9.3
9.4
10
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .4
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . .7
Legal information. . . . . . . . . . . . . . . . . . . . . . . . .8
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .8
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
Contact information. . . . . . . . . . . . . . . . . . . . . . .8
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 2 March 2009
Document identifier: BYV32E-150_4
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