Fairchild BC849CMTF Npn epitaxial silicon transistor Datasheet

BC846 - BC850
NPN Epitaxial Silicon Transistor
Features
3
• Switching and Amplifier Applications
• Suitable for automatic insertion in thick and thin-film circuits
• Low Noise: BC849, BC850
• Complement to BC856 ... BC860
2
1
SOT-23
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings*
Symbol
VCBO
Ta = 25°C unless otherwise noted
Parameter
Value
Units
Collector-Base Voltage
: BC846
80
V
: BC847/850
50
V
: BC848/849
30
V
Collector-Emitter Voltage : BC846
65
V
VCEO
: BC847/850
45
V
: BC848/849
30
V
Emitter-Base Voltage
: BC846/847
6
V
VEBO
: BC848/849/850
5
V
Collector Current (DC)
100
mA
IC
Collector Power Dissipation
310
mW
PC
Junction Temperature
150
°C
TJ
Storage Temperature
-65 to 150
°C
TSTG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics*
Symbol
Parameter
Ta = 25°C unless otherwise noted
Test Condition
ICBO
Collector Cut-off Current
VCB=30V, IE=0
DC Current Gain
VCE=5V, IC=2mA
hFE
VCE (sat) Collector-Emitter Saturation Voltage IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
IC=10mA, IB=0.5mA
VBE (sat) Collector-Base Saturation Voltage
IC=100mA, IB=5mA
VCE=5V, IC=2mA
VBE (on) Base-Emitter On Voltage
VCE=5V, IC=10mA
Current Gain Bandwidth Product
VCE=5V, IC=10mA, f=100MHz
fT
Output Capacitance
VCB=10V, IE=0, f=1MHz
Cob
Input Capacitance
VEB=0.5V, IC=0, f=1MHz
Cib
NF
Noise Figure
: BC846/847/848
VCE= 5V, IC= 200μA
RG=2KΩ, f=1KHz
: BC849/850
: BC849
VCE= 5V, IC= 200μA
RG=2KΩ, f=30~15000Hz
: BC850
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
© 2011 Fairchild Semiconductor Corporation
BC846 - BC850 Rev. B1
Min.
Typ.
110
580
90
200
700
900
660
Max.
Units
15
800
250
600
nA
700
720
300
3.5
9
6
2
1.2
1.4
1.4
10
4
4
3
mV
mV
mV
mV
mV
mV
MHz
pF
pF
dB
dB
dB
dB
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1
BC846 - BC850 — NPN Epitaxial Silicon Transistor
April 2011
Classification
hFE
A
110 ~ 220
B
200 ~ 450
C
420 ~ 800
Ordering Information
Device(note1) Device Marking Package
BC846AMTF
BC846BMTF
BC846CMTF
BC847AMTF
BC847BMTF
BC847CMTF
BC848AMTF
BC848BMTF
BC848CMTF
BC849AMTF
BC849BMTF
BC849CMTF
BC850AMTF
BC850BMTF
BC850CMTF
8AA
8AB
8AC
8BA
8BB
8BC
8CA
8CB
8CC
8DA
8DB
8DC
8EA
8EB
8EC
Packing Method
Qty(pcs)
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
3000
3000
3000
3000
3000
3000
3000
3000
3000
3000
3000
3000
3000
3000
3000
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
Pin Difinitions
1.Base
1.Base
1.Base
1.Base
1.Base
1.Base
1.Base
1.Base
1.Base
1.Base
1.Base
1.Base
1.Base
1.Base
1.Base
2.Emitter
2.Emitter
2.Emitter
2.Emitter
2.Emitter
2.Emitter
2.Emitter
2.Emitter
2.Emitter
2.Emitter
2.Emitter
2.Emitter
2.Emitter
2.Emitter
2.Emitter
3.Collector
3.Collector
3.Collector
3.Collector
3.Collector
3.Collector
3.Collector
3.Collector
3.Collector
3.Collector
3.Collector
3.Collector
3.Collector
3.Collector
3.Collector
Note1 : Affix “-A,-B,-C” means hFE classification.
Affix “-M” means SOT-23 package.
Affix “-TF” means the tape & reel type packing.
© 2011 Fairchild Semiconductor Corporation
BC846 - BC850 Rev. B1
www.fairchildsemi.com
2
BC846 - BC850 — NPN Epitaxial Silicon Transistor
hFE Classification
10000
IB = 400μA
IB = 350μA
80
VCE = 5V
IB = 300μA
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
100
IB = 250μA
60
IB = 200μA
IB = 150μA
40
IB = 100μA
20
1000
100
IB = 50μA
10
0
0
4
8
12
16
1
20
10
Figure 1. Static Characteristic
Figure 2. DC current Gain
100
10000
IC = 10 IB
VBE(sat)
1000
VCE = 2V
IC[mA], COLLECTOR CURRENT
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
1000
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
100
VCE(sat)
10
1
0.1
0.0
10
1
10
100
1000
100
f=1MHz
10
1
0.1
10
100
1000
0.6
0.8
1.0
1.2
1000
VCE=5V
100
10
1
0.1
1
10
100
IC[mA], COLLECTOR CURRENT
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
© 2011 Fairchild Semiconductor Corporation
BC846 - BC850 Rev. B1
0.4
Figure 4. Base-Emitter On Voltage
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1
0.2
VBE[V], BASE-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Cob[pF], CAPACITANCE
100
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3
BC846 - BC850 — NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
BC846 - BC850 — NPN Epitaxial Silicon Transistor
Physical Dimensions
SOT-23
Dimensions in Millimeters
© 2011 Fairchild Semiconductor Corporation
BC846 - BC850 Rev. B1
www.fairchildsemi.com
4
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Datasheet contains the design specifications for product development. Specifications may change
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changes at any time without notice to improve the design.
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The datasheet is for reference information only.
Rev. I53
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