SSM3K121TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K121TU Power Management Switch Applications High-Speed Switching Applications Unit: mm Ron = 140 mΩ (max) (@VGS = 1.5 V) Ron = 93 mΩ (max) (@VGS = 1.8 V) Ron = 63 mΩ (max) (@VGS = 2.5 V) Ron = 48 mΩ (max) (@VGS = 4.0 V) 2.1±0.1 Drain current DC Pulse Drain power dissipation Channel temperature Storage temperature range Symbol Rating Unit VDS VGSS ID IDP 20 ± 10 3.2 6.4 800 500 150 −55~150 V V PD (Note 1) PD (Note 2) Tch Tstg A 1 3 2 0.7±0.05 Characteristics Drain-Source voltage Gate-Source voltage 2.0±0.1 Absolute Maximum Ratings (Ta = 25°C) +0.1 0.3 -0.05 1.7±0.1 0.166±0.05 1.5 V drive Low ON-resistance: 0.65±0.05 • • mW °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a ceramic board. (25.4 mm × 25.4 mm × 0.8 t, Cu Pad: 645 mm2 ) Note 2: Mounted on a FR4 board. (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 ) 1: Gate 2: Source 3: Drain UFM JEDEC ― JEITA ― TOSHIBA 2-2U1A Weight: 6.6 mg (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Drain-Source breakdown voltage Drain cutoff current Gate leakage current Gate threshold voltage Forward transfer admittance Drain-Source ON-resistance Input capacitance Output capacitance Reverse transfer capacitance Total Gate Charge Gate−Source Charge Gate−Drain Charge Turn-on time Switching time Turn-off time Drain-Source forward voltage Symbol V (BR) DSS V (BR) DSX IDSS IGSS Vth ⏐Yfs⏐ RDS (ON) Ciss Coss Crss Qg Qgs Qgd ton toff VDSF Test Condition Min Typ. Max ⎯ ⎯ ⎯ ⎯ ⎯ 13 ⎯ ⎯ 1 ±1 1.0 ⎯ ID = 1 mA, VGS = 0 ID = 1 mA, VGS = − 10 V VDS = 20 V, VGS = 0 VGS = ± 10 V, VDS = 0 VDS = 3 V, ID = 1 mA VDS = 3 V, ID = 2.0 A (Note 3) 20 12 ⎯ ⎯ 0.35 6.5 ID = 2.0 A, VGS = 4.0 V (Note 3) ⎯ 36 48 ID = 2.0 A, VGS = 2.5 V ID = 1.0 A, VGS = 1.8 V ID = 0.5 A, VGS = 1.5 V (Note 3) (Note 3) (Note 3) ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 46 60 75 400 68 60 5.9 4.1 1.8 14 15 −0.85 63 93 140 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -1.2 VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, IDS= 3.2 A VGS = 4 V VDD = 10 V, ID = 2 A, VGS = 0~2.5 V, RG = 4.7 Ω ID = −3.2 A, VGS = 0 V (Note 3) Unit V μA μA V S mΩ pF nC ns V Note 3: Pulse test 1 2007-11-01 SSM3K121TU Switching Time Test Circuit (a) Test Circuit (b) VIN 2.5 V OUT 2.5 V 90% IN 0V RG 0 10 μs VDD = 10 V RG = 4.7 Ω D.U. < = 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C Marking VDD (c) VOUT VDD 10% VDS (ON) 10% 90% tr ton tf toff Equivalent Circuit (top view) 3 3 KKB 1 2 1 2 Notice on Usage Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth, and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2007-11-01 SSM3K121TU ID – VDS 7 4.0 V 2.5 V ID – VGS 10 1.8 V 1.5 V ID 3 2 VGS = 1.2 V 1 0 Common Source Ta = 25 °C 0 0.4 0.2 0.6 0.8 Drain - Source voltage VDS 0.1 Ta = 100 °C Drain current Drain current 4 Common Source VDS = 3 V 1 (A) 5 ID (A) 6 0.01 25 °C 0.001 − 25 °C 0.0001 0 1.0 (V) 1.0 VGS (V) RDS (ON) – ID RDS (ON) – VGS 200 200 ID =2.0A Common Source Common Source Ta = 25°C Drain – Source on-resistance RDS (ON) (mΩ) Drain – Source on-resistance RDS (ON) (mΩ) 2.0 Gate - Source voltage 100 25 °C Ta = 100 °C 100 1.5V 1.8 V 2.5 V VGS = 4.0 V − 25 °C 0 0 2 6 4 Gate - Source voltage 0 8 Vth (V) Gate threshold voltage Drain – Source on-resistance RDS (ON) (mΩ) ID 6 (A) 1.0 Common Source 0.5A / 1.5 V 2.0A / 2.5 V ID = 2.0 A / VGS = 4.0 V 0 −50 4 Vth – Ta RDS (ON) – Ta 1.0 A / 1.8 V 2 Drain current 200 100 0 VGS (V) Common Source VDS = 3 V ID = 1 mA 0.8 0.6 0.4 0.2 0 0 50 Ambient temperature 100 Ta −50 150 (°C) 0 50 Ambient temperature 3 100 Ta 150 (°C) 2007-11-01 SSM3K121TU (S) 10 VDS = 3 V IDR – VDS 10 IDR Ta = 25 °C 3 1 0.3 0.1 0.03 0.01 0.001 Common Source VGS = 0 V (A) Common Source Drain reverse current Forward transfer admittance ⎪Yfs⎪ |Yfs| – ID 30 0.1 0.01 Drain current 1 ID G S 0.1 0.01 100 °C 0.001 25 °C 0.0001 0 10 D IDR Ta = 25 °C 1 -0.2 (A) -0.4 −25 °C -0.6 -0.8 Drain-Source voltage C – VDS -1.0 VDS -1.2 (V) t – ID 1000 1000 Common Source (ns) Ciss 100 tf 10 ton Switching time C t (pF) 300 VDD = 10 V VGS = 0 ∼ 2.5 V Ta = 25 °C RG = 4.7 Ω toff Capacitance 100 Coss Crss 30 Common Source Ta = 25 °C f = 1 MHz VGS = 0 V 10 0.1 1 10 Drain – Source voltage 1 0.01 100 VDS tr (V) 0.1 Drain current 1 ID 10 (A) Dynamic Input Characteristic 10 Common ID = 3.2A Gate-Source voltage VGS (V) Source 8 6 VDD=10V 4 VDD=16V 2 0 0 5 Total Gate Charge 15 10 Qg (nC) 4 2007-11-01 SSM3K121TU PD – Ta 1000 600 a: Mounted on ceramic board (25.4mm × 25.4mm × 0.8t , Cu Pad : 645 mm2) b: Mounted on FR4 board (25.4mm × 25.4mm × 1.6t , 2 Cu Pad : 645 mm ) c b 100 a 10 1 0.001 Single pulse a: Mounted on ceramic board (25.4mm × 25.4mm × 0.8t , Cu Pad : 645 mm2) b: Mounted on FR4 board (25.4mm × 25.4mm × 1.6t , Cu Pad : 645 mm2) c: Mounted on FR4 Board 2 (25.4mm × 25.4mm × 1.6t , Cu Pad : 0.36 mm ×3) 0.01 0.1 1 Pulse width 10 tw 100 Drain power dissipation PD (mW) Transient thermal impedance Rth (°C/W) rth – tw 800 a 600 400 b 200 0 600 (s) -40 120 -20 0 20 40 60 80 Ambient temperature 5 100 Ta 140 160 (°C) 2007-11-01 SSM3K121TU RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-11-01