TK15D60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ) TK15D60U Switching Regulator Applications Unit: mm 10.0±0.3 Low drain-source ON-resistance: RDS (ON) = 0.24 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) A 9.5±0.2 0.6±0.1 Absolute Maximum Ratings (Ta = 25°C) 15.0±0.3 3.2 2.8 Ф3.65±0.2 9.0 • • • • 1.1±0.15 VDSS 600 V ±30 (Note 1) ID 15 Pulse (t = 1 ms) (Note 1) IDP 30 DC V Ф0.2 M A 2.54 2.54 +0.25 0.57 -0.10 2.53±0.2 A 1 Drain power dissipation (Tc = 25°C) PD 170 W Single pulse avalanche energy (Note 2) EAS 81 mJ Avalanche current IAR 15 A Repetitive avalanche energy EAR 17 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C (Note 3) 0.62±0.15 12.8±0.5 Unit VGSS Gate-source voltage Drain current Rating 4.5±0.2 Drain-source voltage Symbol 2.8Max. Characteristics 0.75±0.25 2 3 1. Gate 2. Drain (heatsink) 3. Source JEDEC ⎯ JEITA ⎯ TOSHIBA 2-10V1A Weight : 1.35 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 0.735 °C/W Thermal resistance, channel to ambient Rth (ch-a) 83.3 °C/W 2 Note 1: Ensure that the channel temperature does not exceed 150°C. 1 Note 2: VDD = 90 V, Tch = 25°C (initial), L = 0.63 mH, RG = 25 Ω, IAR = 15 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 3 2008-07-02 TK15D60U Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±30 V, VDS = 0 V ⎯ ⎯ ±1 μA Drain cut-off current IDSS VDS = 600 V, VGS = 0 V ⎯ ⎯ 100 μA V (BR) DSS ID = 10 mA, VGS = 0 V 600 ⎯ ⎯ V Vth VDS = 10 V, ID = 1 mA 3.0 ⎯ 5.0 V Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 7.5 A ⎯ 0.24 0.3 Ω Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 7.5 A 3.0 8.5 ⎯ S Input capacitance Ciss ⎯ 950 ⎯ Reverse transfer capacitance Crss ⎯ 47 ⎯ Output capacitance Coss ⎯ 2300 ⎯ ⎯ 37 ⎯ ⎯ 80 ⎯ Drain-source breakdown voltage Gate threshold voltage Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz Turn-ON time ton tf Turn-OFF time VOUT RL = 40 Ω 50 Ω Switching time Fall time ID = 7.5A 10 V VGS 0V tr VDD ≈ 300 V Duty ≤ 1%, tw = 10 μs toff Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VDD ≈ 400 V, VGS = 10 V, ID = 15 A pF ns ⎯ 8 ⎯ ⎯ 105 ⎯ ⎯ 17 ⎯ ⎯ 10 ⎯ ⎯ 7 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit (Note 1) IDR ⎯ ⎯ ⎯ 15 A (Note 1) IDRP ⎯ ⎯ ⎯ 30 A Continuous drain reverse current Pulse drain reverse current Forward voltage (diode) VDSF IDR = 15 A, VGS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time trr IDR = 15 A, VGS = 0 V, ⎯ 530 ⎯ ns Reverse recovery charge Qrr dIDR/dt = 100 A/μs ⎯ 9.0 ⎯ μC Marking K15D60U Part No. (or abbreviation code) Lot No. A line indicates Lead(Pb)-Free Finish 2 2008-07-02 TK15D60U ID – VDS 10 Common source Tc = 25°C 10 Pulse test 8 8 6.8 4 Drain current 6.5 6.2 6 2 VGS = 5.8 V 0 8.5 Common source Tc = 25°C Pulse test 15 (A) ID 6 0 10 24 15 (A) ID Drain current ID – VDS 30 7 1 2 3 Drain−source voltage 4 VDS 8 18 7.5 12 7 6.3 6 0 5 VGS = 6.2 V 0 (V) 10 20 VDS (V) Drain−source voltage ID Drain current 18 100 12 Tc = −55°C 25 6 2 4 6 Gate−source voltage 8 VGS 8 6 4 ID = 15A 2 7.5 4 (V) 4 8 12 Gate−source voltage ⎪Yfs⎪ − ID 16 VGS 20 (V) RDS (ON) − ID 10 Common source VDS = 10 V Pulse test Drain−source ON-resistance RDS (ON) (Ω) Forward transfer admittance ⎪Yfs⎪ (S) (V) Common source Tc = 25°C Pulse test 0 0 10 100 Tc = −55°C 10 100 25 1 0.1 0.1 50 VDS – VGS Common source VDS = 20 V Pulse test 0 0 VDS 10 (A) 24 40 Drain−source voltage ID – VGS 30 30 1 Drain current 10 ID Common source Tc = 25°C Pulse test 1 VGS = 10 V 15 0.1 0.01 1 100 (A) Drain current 3 100 10 ID (A) 2008-07-02 TK15D60U IDR − VDS RDS (ON) – Tc 7.5 0.6 15 ID = 4 A 0.4 0.2 −40 0 40 80 Case temperature 120 Tc 160 10 10,15 1 5 3 1 0.1 0 200 0.4 (°C) Vth (V) Gate threshold voltage (V) Coss 100 10 Common source VGS = 0 V f = 1 MHz Tc = 25°C Crss 10 2 1 Common source VDS = 10 V ID = 1 mA Pulse test 0 −80 100 VDS 3 (V) −40 0 40 80 120 Case temperature Tc 200 VDS (V) (W) 500 PD 160 Drain−source voltage 120 80 40 80 120 Case temperature 200 Dynamic input/output characteristics PD − Tc 40 160 (°C) 160 Tc 400 (°C) VDS 200V VDD = 100V 300 12 8 VGS 100 4 6 12 Total gate charge 4 400V 200 0 0 200 20 Common source ID = 15 A Tc = 25°C Pulse test 16 18 Qg (V) 1 4 VGS (pF) Ciss 1000 C Capacitance VDS 5 Drain−source voltage Drain power dissipation 1.2 Vth − Tc C – VDS 0 0 0.8 Drain−source voltage 10000 1 0.1 VGS = 0 V 24 Gate−source voltage 0 −80 Common source Tc = 25°C Pulse test (A) Common source VGS = 10 V Pulse test IDR 0.8 100 Drain reverse current Drain−source ON-resistance RDS (ON) (Ω) 1 0 30 (nC) 2008-07-02 TK15D60U rth – tw Normalized transient thermal impedance rth (t)/Rth (ch-c) 10 1 Duty = 0.5 0.2 0.1 PDM 0.1 0.05 Single pulse 0.02 0.01 10 μ t T 0.01 Duty = t/T Rth (ch-c) = 0.735°C/W 100 μ 1m 10 m Pulse width 100 m tw 1 10 (s) EAS – Tch Safe operating area 100 100 1 ms * 10 (A) EAS (mJ) 100 μs * ID max (Pulse) * ID max (Continuous) 0.1 0.01 Avalanche energy ID 1 Drain current DC operation Tc = 25°C * Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 0.001 0.1 1 Drain−source voltage 100 VDS 60 40 20 0 25 VDSS max 10 80 50 75 100 125 Channel temperature (initial) 1000 150 Tch (°C) (V) BVDSS 15 V IAR −15 V VDD Waveform Test circuit RG = 25 Ω VDD = 90 V, L = 0.63 mH 5 VDS Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜ ⎟ 2 ⎝ B VDSS − VDD ⎠ 2008-07-02 TK15D60U RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2008-07-02