SSM6N29TU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM6N29TU High-Speed Switching Applications • 1.8 V drive • N-ch 2-in-1 • Low ON-resistance: Unit: mm 2.1±0.1 Ron = 235 mΩ (max) (@VGS = 1.8 V) Unit VDS 20 V V VGSS ± 12 DC ID 0.8 Pulse IDP 1.6 PD (Note 1) 500 Gate-source voltage Drain current Rating Drain power dissipation 6 2 5 3 4 +0.06 0.16-0.05 Drain-source voltage Symbol 1 0.7±0.05 Characteristic 0.65 0.65 2.0±0.1 Absolute Maximum Ratings (Ta = 25 °C) (Q1 , Q2 Common) 1.3±0.1 Ron = 143 mΩ (max) (@VGS = 4.0 V) A +0.1 0.3-0.05 1.7±0.1 Ron = 178 mΩ (max) (@VGS = 2.5 V) mW Channel temperature Tch 150 °C Storage temperature range Tstg − 55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board. (total dissipation) 2 (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad : 645 mm ) 1.Source1 2.Gate1 UF6 3.Drain2 4.Source2 5.Gate2 6.Drain1 JEDEC ― JEITA ― TOSHIBA 2-2T1B Weight: 7 mg (typ.) Electrical Characteristics (Ta = 25°C) (Q1 , Q2 Common) Characteristic Drain-source breakdown voltage Symbol Test Conditions Min Typ. Max V (BR) DSS ID = 1 mA, VGS = 0 20 ⎯ ⎯ V (BR) DSX ID = 1 mA, VGS = − 12 V 10 ⎯ ⎯ Unit V Drain cutoff current IDSS VDS = 20 V, VGS = 0 ⎯ ⎯ 1 μA Gate leakage current IGSS VGS = ± 12 V, VDS = 0 ⎯ ⎯ ±1 μA Vth VDS = 3 V, ID = 1 mA 0.4 ⎯ 1.0 V Forward transfer admittance ⏐Yfs⏐ VDS = 3 V, ID = 0.6 A (Note 2) 2.3 3.75 ⎯ S ID = 0.6 A, VGS = 4.0 V (Note 2) ⎯ 116 143 Drain-source ON-resistance RDS (ON) ID = 0.4 A, VGS = 2.5 V (Note 2) ⎯ 134 178 ID = 0.2 A, VGS = 1.8 V (Note 2) ⎯ 160 235 Gate threshold voltage mΩ Input capacitance Ciss VDS = 10 V, VGS = 0, f = 1 MHz ⎯ 268 ⎯ pF Output capacitance Coss VDS = 10 V, VGS = 0, f = 1 MHz ⎯ 44 ⎯ pF Reverse transfer capacitance Crss VDS = 10 V, VGS = 0, f = 1 MHz ⎯ 34 ⎯ pF Switching time Turn-on time ton VDD = 10 V, ID = 0.25 A, ⎯ 9 ⎯ Turn-off time toff VGS = 0 to 2.5 V, RG = 4.7 Ω ⎯ 16 ⎯ ⎯ − 0.8 − 1.15 Drain-source forward voltage VDSF ID = − 0.8 A, VGS = 0 V (Note 2) ns V Note 2 : Pulse test 1 2007-11-01 SSM6N29TU Switching Time Test Circuit (a) Test Circuit (b) VIN 2.5 V OUT 2.5 V 0V RG 0 10 μs Marking 5 2 VDS (ON) 10 % 90 % tr ton tf toff Equivalent Circuit (top view) 4 6 5 4 Q1 KK1 1 10 % VDD (c) VOUT VDD VDD = 10 V RG = 4.7 Ω < 1% D.U. = VIN: tr, tf < 5 ns Common Source Ta = 25 °C 6 90 % IN Q2 3 1 2 3 Precaution Vth can be expressed as the voltage between gate and source when the low operating current value is ID= 1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth, and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on). ) Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2007-11-01 SSM6N29TU ID - VDS 5 10 4.0 2.5 1 1.8 Drain Current ID (A) Drain Current ID (A) 4 3 1.5 2 VGS = 1.2 V 1 Ta = 85 °C 0.1 25 °C 0.01 - 25 °C 0.001 Common Source Ta = 25 °C 0 Common Source V DS = 3 V 0.0001 0 0.2 0.4 0.6 0.8 Drain-Source Voltage VDS (V) 1 0 RDS(ON) - VGS 200 Drain-Source ON-Resistance RDS(ON) (mΩ) 140 120 0.5 A ID = 0.2 A 80 1A 60 40 20 0 RDS(ON) - Ta 250 200 1.8 V , 0.2 A 150 2.5 V , 0.5 A 100 VGS = 4 V , ID = 1 A 50 0 0 1 2 3 4 5 6 7 8 Gate-Source Voltage VGS (V) 9 10 -60 -40 -20 0 Vth - Ta 1 Common Source ID = 1 mA VDS = 3 V 180 Gate Threshold Voltage Vth(V) 160 140 1.8 V 120 100 2.5 V 80 VGS = 4 V 60 40 Common Source Ta = 25 °C 20 20 40 60 80 100 120 140 160 Ambient Temperature Ta(℃) RDS(ON) - ID 200 Drain-Source ON-Resistance RDS(ON) (mΩ) 2 Common Source 160 100 1 Gate-Source Voltage VGS (V) 300 Common Source Ta = 25 °C 180 Drain-Source ON-Resistance RDS(ON) (mΩ) ID - VGS 10 0 0.8 0.6 0.4 0.2 0 0 1 2 3 4 5 -60 -40 -20 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta(°C) Drain Current ID (A) 3 2007-11-01 SSM6N29TU |Yfs| - ID Drain Reverse Current IDR (A) |Yfs| (S) - 25 °C Ta = 85 °C 1.0 IDR - VDS 10 25 °C Common Source V DS = 3 V Ta = 25 °C 0.1 Common Source VGS = 0 V Ta = 25 °C 1 D G IDR 0.1 - 25 °C S Ta = 85 °C 0.01 0.1 1 10 0 -0.2 -0.4 -0.6 -0.8 Drain-Source Voltage VDS (V) Drain Current ID (A) C - VDS 1000 Ciss 100 Coss Common Source VGS = 0 V f = 1 MHz Ta = 25 °C 1 10 toff tf 10 ton tr 1 0.01 100 0.1 1 Drain Current ID (A) Drain-Source Voltage V DS (V) PD - Ta 1000 Common Source VDD = 10 V VGS = 0 to 2.5 V Ta = 25 °C 100 Crss 10 0.1 -1 t - ID 1000 Switching Time t (ns) Capacitance C (pF) 25 °C 0.001 0.01 10 Rth - tw 1000 b 800 a : Mounted on an FR4 board. (25.4mm×25.4mm×1.6mm) Cu Pad :25.4mm×25.4mm b : Mounted on a ceramic board. (25.4mm×25.4mm×0.8mm) Cu Pad :25.4mm×25.4mm Transient Thermal Impedance Rth (°C/W) Drain Power Dissipation PD (mW) Forward Transfer Admittance 10.0 600 a 400 200 0 0 20 c 4 Single pulse a : Mounted on a ceramic board. (25.4mm×25.4mm×0.8mm) Cu Pad :25.4mm×25.4mm b : Mounted on an FR4 board. (25.4mm×25.4mm×1.6mm) Cu Pad :25.4mm×25.4mm c : Mounted on an FR4 Board (25.4mm×25.4mm×1.6mm) Cu Pad :0.45mm×0.8mm×3 10 1 0.001 40 60 80 100 120 140 160 Ambient Temperature Ta(°C) b a 100 0.01 0.1 1 10 Pulse Width tw (S) 100 1000 2007-11-01 SSM6N29TU RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2007-11-01