Seme LAB D1025UK Gold metallised multi-purpose silicon dmos rf fet 100w - 28v - 175mhz single ended Datasheet

TetraFET
D1025UK
METAL GATE RF SILICON FET
MECHANICAL DATA
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
100W – 28V – 175MHz
SINGLE ENDED
C
D
(2 pls)
E
1
B
2
3
A
G
5
4
H
I
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
F
M
J
K
N
• SUITABLE FOR BROAD BAND APPLICATIONS
DT
PIN 1
SOURCE (COMMON) PIN 2
GATE
• LOW Crss
PIN 3
SOURCE (COMMON) PIN 4
SOURCE (COMMON)
• SIMPLE BIAS CIRCUITS
PIN 5
DRAIN
• LOW NOISE
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
mm
6.35 DIA
3.17 DIA
18.41
5.46
5.21
7.62
21.59
3.94
12.70
0.13
24.76
2.59
4.06
Tol.
0.13
0.13
0.25
0.13
0.13
MAX
0.38
0.13
0.13
0.03
0.13
0.13
0.25
Inches
0.250 DIA
0.125 DIA
0.725
0.215
0.205
0.300
0.850
0.155
0.500
0.005
0.975
0.102
0.160
Tol.
0.005
0.005
0.010
0.005
0.005
MAX
0.015
0.005
0.005
0.001
0.005
0.005
0.010
• HIGH GAIN – 16 dB MINIMUM
APPLICATIONS
• HF/VHF COMMUNICATIONS
from 1 MHz to 175 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD
BVDSS
BVGSS
ID(sat)
Tstg
Tj
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
175W
70V
±20V
25A
–65 to 150°C
200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Docuemnt Number 3321
Issue 1
D1025UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
BVDSS
IDSS
IGSS
Drain–Source
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
VGS(th) Gate Threshold Voltage *
Typ.
Max. Unit
V
VGS = 0
ID = 100mA
VDS = 28V
VGS = 0
5
mA
VGS = 20V
VDS = 0
1
µA
ID = 10mA
VDS = VGS
1
7
V
ID = 4A
4
S
16
dB
50
%
20:1
—
gfs
Forward Transconductance *
VDS = 10V
GPS
Common Source Power Gain
PO = 100W
η
Drain Efficiency
VDS = 28V
VSWR Load Mismatch Tolerance
f = 175MHz
IDQ = 0.5A
70
Ciss
Input Capacitance
VDS = 28V
VGS = –5V f = 1MHz
300
pF
Coss
Output Capacitance
VDS = 28V
VGS = 0
f = 1MHz
150
pF
Crss
Reverse Transfer Capacitance
VDS = 28V
VGS = 0
f = 1MHz
12.5
pF
* Pulse Test:
Pulse Duration = 300 µs , Duty Cycle ≤ 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHj–case
Thermal Resistance Junction – Case
Max. 1.0°C / W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Docuemnt Number 3321
Issue 1
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