TOSHIBA SSM6P16FE

SSM6P16FE
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM6P16FE
High Speed Switching Applications
Analog Switch Applications
Unit: mm
•
Small package
•
Low on-resistance
: Ron = 8 Ω (max) (@VGS = −4 V)
: Ron = 12 Ω (max) (@VGS = −2.5 V)
: Ron = 45 Ω (max) (@VGS = −1.5 V)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Symbol
Rating
Unit
Drain-Source voltage
Characteristics
VDS
−20
V
Gate-Source voltage
VGSS
±10
V
Drain current
DC
ID
−100
Pulse
IDP
−200
Drain power dissipation (Ta = 25°C)
PD (Note 1)
mA
150
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Note:
1: Source1
2: Gate1
3: Drain2
4: Source2
5: Gate2
6: Drain1
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
JEDEC
―
JEITA
―
TOSHIBA
2-2N1D
Note 1: Total rating, mounted on FR4 board
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.135 mm × 6)
0.45 mm
0.3 mm
Marking
6
Equivalent Circuit (top view)
5
4
6
2
4
Q1
DT
1
5
Q2
3
1
2
3
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is
protected against static electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
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SSM6P16FE
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristic
Symbol
MAX.
UNIT
⎯
⎯
±1
μA
V (BR) DSS
ID = −0.1 mA, VGS = 0
−20
⎯
⎯
V
IDSS
VDS = −20 V, VGS = 0
⎯
⎯
−1
μA
Gate threshold voltage
Forward transfer admittance
Vth
VDS = −3 V, ID = −0.1 mA
−0.6
⎯
−1.1
V
⎪Yfs⎪
VDS = −3 V, ID = −10 mA
25
⎯
⎯
mS
ID = −10 mA, VGS = −4 V
⎯
6
8
ID = −10 mA, VGS = −2.5 V
⎯
8
12
ID = −1 mA, VGS = −1.5 V
⎯
18
45
⎯
11
⎯
pF
⎯
3.7
⎯
pF
⎯
10
⎯
pF
⎯
130
⎯
⎯
190
⎯
RDS (ON)
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Switching time
TYP.
VGS = ±10 V, VDS = 0
Drain cut-off current
Drain-Source on-resistance
MIN.
IGSS
Gate leakage current
Drain-Source breakdown voltage
Test Condition
Turn-on time
ton
Turn-off time
toff
VDS = −3 V, VGS = 0, f = 1 MHz
VDD = −3 V, ID = − 10 mA,
VGS = 0 ~ −2.5 V
Ω
ns
Switching Time Test Circuit
(a) Test circuit
0
OUT
(b) VIN
0V
10%
IN
50 Ω
−2.5V
10 μs
VDD
90%
−2.5 V
RL
(c) VOUT
VDD = −3 V
Duty <
= 1%
VIN: tr, tf < 5 ns
(Zout = 50 Ω)
Common Source
Ta = 25°C
VDS (ON)
90%
10%
VDD
tr
ton
tf
toff
Precaution
Vth can be expressed as the voltage between the gate and source when the low operating current value is ID =
100 μA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off)
requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).)
Be sure to take this into consideration when using the device.
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SSM6P16FE
ID – VDS
ID – VGS
-250
-1000
-150
-2.7
(mA)
-3
VDS = -3 V
-2.5
ID
-200
Common Source
Ta = 25°C
-4
Drain current
Drain current
ID
(mA)
Common Source
-10
-2.3
-100
-2.1
-1.9
-50
-1.7
-100
Ta = 100°C
-10
25°C
−25°C
-1
-0.1
VGS = -1.5 V
0
0
-0.5
-1
-1.5
Drain - Source voltage
VDS
-0.01
0
-2
(V)
-1
-2
-3
Gate- Source voltage
20
Common Source
ID = -1 mA
Drain – Source on-resistance
RDS (ON) (Ω)
Drain – Source on-resistance
RDS (ON) (Ω)
1.8
VGS = -1.5 V
20
15
-2.5 V
10
5
-4 V
0
-1
-10
1.6
1.4
1.2
10
8
Ta=100℃
.4
ID
0
-1000
-25℃
0
-2
-4
RDS (ON) – Ta
Vth (V)
30
25
Gate threshold voltage
Drain – Source on-resistance
RDS (ON) (Ω)
Common Source
VGS =−1.5 V, ID=-1mA
15
-2.5 V, -10mA
10
5
0
−25
-4V, -10mA
0
25
50
75
-10
-8
VGS (V)
Vth – Ta
-2
20
-6
Gate - Source voltage
(mA)
40
35
25℃
6
2
-100
Drain - current
(V)
RDS (ON) – VGS
RDS (ON) – ID
25
VGS
-4
100
Ambient temperature Ta
125
-1.8
-1.6
-1.4
-1.2
-1
-0.8
-0.6
-0.4
-0.2
0
−25
150
(°C)
Common Source
ID = -0.1 mA
VDS = -3 V
0
25
50
75
100
Ambient temperature Ta
3
125
150
(°C)
2007-11-01
SSM6P16FE
⎪Yfs⎪ – ID
IDR – VDS
-250
-200
Common Source
VGS = 0 V
Ta = 25°C
D
IDR
300
(mA)
Common Source
VDS =−3 V
Ta = 25°C
500
100
Drain reverse current
Forward transfer admittance
( S)
⎪Yfs⎪
1000
50
30
10
5
3
1
-1
-10
-100
Drain current
ID
-150
S
-100
-50
0
0
-1000
IDR
G
0.2
(mA)
0.4
0.6
Drain - Source
VDS
1.2
1.4
(V)
10000
Common Source
VGS = 0 V
f = 1 MHz
Ta = 25°C
Common Source
VDD = -3 V
VGS = 0~-2.5 V
Ta = 25°C
5000
(ns)
3000
toff
1000
t
100
10
Switching time
C
(pF)
1
t – ID
c – VDS
200
Capacitance
0.8
Ciss
Coss
500
tf
300
100
50
ton
tr
30
Crss
1
-0.1
-1
-10
10
-0.1
-100
Drain - Source voltage VDS
(V)
-1
Drain current ID
-10
-100
(mA)
PD – Ta
Drain power dissipation
PD
(mW)
250
Mounted on FR4 board
(25.4mmX25.4mmX1.6t
CU Pad:0.6mm2X3
200
150
100
50
0
0
20
40
60
80
100
Ambient temperature
120
Ta
140
160
(°C)
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2007-11-01
SSM6P16FE
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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