HN4B101J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) HN4B101J MOS Gate Drive Applications Switching Applications Unit: mm +0.2 2.8 -0.3 Low collector-emitter saturation: PNP VCE (sat) = −0.20 V (max) High-speed switching : PNP 2 tf = 45 ns (typ.) 3 +0.2 1.1 -0.1 : NPN tf = 50 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Rating Characteristic Symbol PNP NPN −30 50 V Collector-emitter voltage VCEO −30 30 V Emitter-base voltage VEBO −7 7 V (Note 1) IC −1.0 1.2 Pulse (Note 1) ICP −5.0 5.0 IB −120 120 Base current A mA Collector power dissipation (t = 10 s) Single-device operation PC (Note 2) 0.85 W Collector power dissipation (DC) Single-device operation PC (Note 2) 0.55 W Tj 150 °C Tstg −55 to 150 °C Junction temperature Storage temperature range 2. Emitter (PNP/NPN) 3. Base (NPN) VCBO DC 1. Base (PNP) Unit Collector-base voltage Collector current 4 +0.1 0.16 -0.06 • VCE (sat) = 0.17 V (max) 5 0~0.1 : NPN 1 0.4±0.1 • 0.95 High DC current gain : hFE = 200 to 500 (IC = −0.12 A) 0.95 Small footprint due to a small and thin package • 1.9±0.2 • 2.9±0.2 +0.2 1.6 -0.1 4. Collector (NPN) 5. Collector (PNP) JEDEC ― JEITA ― TOSHIBA 2-3L1A Weight: 0.014g (typ.) Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device. Note 2: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2) Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-13 HN4B101J Figure 1. Circuit Configuration (top view) 5 4 Figure 2. NPN PNP Marking 5 K Part No. (or abbreviation code) 1 2 3 Electrical Characteristics (Ta = 25°C) PNP Characteristic Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −30 V, IE = 0 ⎯ ⎯ −100 nA Emitter cut-off current IEBO VEB = −7 V, IC = 0 ⎯ ⎯ −100 nA V (BR) CEO IC = −10 mA, IB = 0 −30 ⎯ ⎯ V hFE (1) VCE = −2 V, IC = −0.12 A 200 ⎯ 500 hFE (2) VCE = −2 V, IC = −0.4 A 125 ⎯ ⎯ Collector-emitter saturation voltage VCE (sat) IC = −0.4 A, IB = −13 mA ⎯ ⎯ −0.20 V Base-emitter saturation voltage VBE (sat) IC = −0.4 A, IB = −13 mA ⎯ ⎯ −1.10 V VCB = −10 V, IE = 0, f = 1MHz ⎯ 7.8 ⎯ pF ⎯ 40 ⎯ ⎯ 200 ⎯ ⎯ 45 ⎯ Min Typ. Max Unit Collector-emitter breakdown voltage DC current gain Collector output capacitance Cob Rise time Switching time tr Storage time tstg Fall time tf See Figure 3 circuit diagram VCC ∼ − −16 V, RL = 40 Ω −IB1 = IB2 = 13 mA ns NPN Characteristic Symbol Test Condition Collector cut-off current ICBO VCB = 50 V, IE = 0 ⎯ ⎯ 100 nA Emitter cut-off current IEBO VEB = 7 V, IC = 0 ⎯ ⎯ 100 nA V (BR) CEO IC = 10 mA, IB = 0 30 ⎯ ⎯ V hFE (1) VCE = 2 V, IC = 0.12 A 200 ⎯ 500 hFE (2) VCE = 2 V, IC = 0.4 A 125 ⎯ ⎯ Collector-emitter saturation voltage VCE (sat) IC = 0.4 A, IB = 13 mA ⎯ ⎯ 0.17 V Base-emitter saturation voltage VBE (sat) IC = 0.4 A, IB = 13 mA ⎯ ⎯ 1.10 V VCB = 10 V, IE = 0, f = 1MHz ⎯ 7.0 ⎯ pF ⎯ 45 ⎯ ⎯ 450 ⎯ ⎯ 50 ⎯ Collector-emitter breakdown voltage DC current gain Collector output capacitance Cob Rise time Switching time tr Storage time tstg Fall time tf See Figure 4 circuit diagram VCC ∼ − 16 V, RL = 40 Ω IB1 = −IB2 = 13 mA Figure 3. Switching Time Test Circuit & Timing Chart Figure 4. Switching Time Test Circuit & Timing Chart 20μs 20μs ns VCC Output Input RL IB1 IB1 RL I B2 IB2 IB1 I B2 Input IB1 Output Duty cycle ＜1% VCC IB2 Duty cycle ＜1% 2 2006-11-13 HN4B101J PNP IC – VCE −10 −20 hFE – IC −8 1000 −6 −5 −3 hFE −2 DC current gain 0.8 0.6 Collector current Ta = 100°C −4 −IC (A) 1.0 IB = −1 mA 0.4 0.2 25°C −55°C 100 Common emitter Common emitter VCE = −2 V Single nonrepetitive pulse Ta = 25°C Single nonrepetitive pulse 0 0 −1 −2 −3 −4 −VCE Collector−emitter voltage 10 0.001 −5 0.01 Collector current (V) VCE (sat) – IC Common emitter β = 30 Single nonrepetitive pulse 0.1 Ta = 100°C −55°C 25°C 0.01 0.001 0.001 0.01 0.1 Collector current 1 −IC (A) VBE (sat) – IC 10 Base−emitter saturation voltage −VBE (sat) (V) Collector−emitter saturation voltage −VCE (sat) (V) 1 0.1 β = 30 Single nonrepetitive pulse Ta = −55°C 1 100°C 25°C 0.1 0.001 1 −IC Common emitter (A) 0.01 0.1 Collector current 1 −IC (A) Safe operating area 10 IC max (pulse) * IC – VBE 10 μs* 0.6 −IC Single nonrepetitive pulse Ta = 100°C Collector current Collector current −IC (A) VCE = −2 V 0.8 −55°C 0.4 25°C 0.2 0 0 0.4 IC max (pulse) * (A) Common emitter 0.8 Base−emitter voltage 1.2 −VBE 1.6 (V) 1 10 ms* 1 ms* IC max (continuous)* DC operation Ta = 25°C *: Single nonrepetitive pulse Ta = 25°C Note that the curves for 100 ms, 10 s and DC operation will be 0.1 different when the devices aren’t mounted on an FR4 board (glass-epoxy, 1.6 mm thick, Cu 2 area: 645 mm ). Single-device operation These characteristic curves must be derated linearly with increase in temperature. 0.01 0.1 1 100 ms* Collector−emitter voltage 3 10 s* VCEO max 1.0 100 μs* 10 100 −VCE (V) 2006-11-13 HN4B101J NPN IC – VCE 1.2 hFE – IC 10 1000 6 8 Ta = 100°C 0.8 hFE 4 25°C 3 0.6 DC current gain Collector current IC (A) 5 1.0 2 0.4 IB = 1 mA −55°C 100 Common emitter Common emitter 0.2 VCE = 2 V Single nonrepetitive pulse Ta = 25°C Single nonrepetitive pulse 0 0 1 2 3 4 Collector−emitter voltage VCE 10 0.001 5 0.01 0.1 Collector current (V) VCE (sat) – IC Common emitter β = 30 Single nonrepetitive pulse 0.1 Ta = 100°C −55°C 25°C 0.01 0.001 0.01 0.1 Collector current IC 10 (A) VBE (sat) – IC 10 Base−emitter saturation voltage VBE (sat) (V) Collector−emitter saturation voltage VCE (sat) (V) 1 1 1 IC Common emitter β = 30 Single nonrepetitive pulse Ta = −55°C 1 100°C 25°C 0.1 0.001 10 (A) 0.01 0.1 Collector current IC 1 (A) Safe operating area 10 IC max (pulse) * IC – VBE (A) Single nonrepetitive pulse 0.8 0.6 Ta = 100°C −55°C 0.4 25°C 0.2 0 0 0.4 0.8 Base−emitter voltage 1.2 VBE 1.6 (V) 10 ms* 1 ms* IC max (continuous)* 1 DC operation Ta = 25°C *: Single nonrepetitive pulse Ta = 25°C Note that the curves for 100 ms, 10 s and DC operation will be 0.1 different when the devices aren’t mounted on an FR4 board (glass-epoxy, 1.6 mm thick, Cu area: 645 mm2). Single-device operation These characteristic curves must be derated linearly with increase in temperature. 0.01 0.1 1 100 ms* Collector−emitter voltage 4 10 μs* 100 μs* 10 s* VCEO max VCE = 2 V IC 1.0 IC max (pulse) * Common emitter Collector current Collector current IC (A) 1.2 10 100 VCE (V) 2006-11-13 HN4B101J Common rth – tw 100 10 Curves apply only to limited areas of thermal resistance. Single nonrepetitive pulse Ta = 25°C Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2) 1 0.001 0.01 0.1 1 10 Pulse width tw 100 1000 (s) Permissible Power Dissipation for Simultaneous Operation Permissible power dissipation for Q2 Pc (W) Transient thermal resistance rth(j-a) (°C/W) 1000 0.7 DC operation Ta = 25°C Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2) 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Permissible power dissipation for Q1 PC (W) Collector power dissipation at single-device operation is 0.55 W. Collector power dissipation at single-device value at dual operation is 0.31 W. Collector power dissipation at dual operation is set to 0.62 W. 5 2006-11-13 HN4B101J RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-13