TOSHIBA Preliminary GT15J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT15J121 High Power Switching Applications Fast Switching Applications ● ● ● The 4th generation Enhancement-mode Ultra Fast Switching(UFS :Operating frequency up to 150kHz(Reference) ● :tr=0.03μs(typ.) High speed :tf=0.08μs(typ.) ● :Eon=0.23mJ(typ.) Low switching loss :Eoff=0.18mJ(typ.) Maximum Ratings (Ta=25℃) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation (Tc=25℃) Junction temperature Storage temperature range DC 1ms Symbol Ratings Unit VCES VGES IC ICP 600 ±20 15 45 V V PC 35 W Tj Tstg 150 -55～150 ℃ ℃ A 2001-7- 1/2 TOSHIBA GT15J121 Preliminary Electrical Characteristics(Ta=25℃) Characteristic Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation volatage Input capacitance Turn-on delay time Rise Time Switching time Turn-on Time Turn-off delay time Fall Time Turn-off Time Switching loss Turn-on switching loss Turn-off switching loss Thermal resistance Symbol IGES ICES VGE(OFF) VCE(sat) Cies td(on) tr ton td(off) tf toff Eon Eoff Rth(j-c) Test Condition VGE=±20V,VCE=0 VCE=600V,VGE=0 IC=1.5mA,VCE=5V IC=15A,VGE=15V VCE=10V,VGE=0,f=1MHz Inductive Load VCC=300V,IC=15A VGG=+15V,RG=27Ω (Note 1) (Note 2) ― Min Typ. Max Unit - - ±500 nA mA V V 3.0 - 2.7 1300 0.04 0.03 0.12 0.10 0.08 0.20 0.23 0.18 - 1.0 6.0 3.5 0.15 - pF μs mJ 3.57 ℃/W GT15J321 2001-7- 2/2