Infineon BSS225 Sipmosâ® small-signal-transistor Datasheet

Type
BSS225
SIPMOS® Small-Signal-Transistor
Product Summary
Feature
600
V
R DS(on),max
45
Ω
ID
0.09
A
V DS
• n-channel
• enhancement mode
1)
• Logic level
• dv /dt rated
• Pb-free lead-plating; RoHS compliant
PG-SOT89
Type
Package
Ordering Code
Tape and Reel Information
Marking
BSS225
PG-SOT89
Q67042-S4266
E6327: 3000PCS/reel
KD
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T A=25 °C
0.09
T A=70 °C
0.073
I D,pulse
T A=25 °C
0.36
Reverse diode dv /dt
dv /dt
I D=0.09 A,
V DS=480 V,
di /dt =200 A/µs,
T j,max=150 °C
Gate source voltage
V GS
Pulsed drain current
±20
ESD sensitivity (HBM) as per
MIL-STD 883
A
kV/µs
V
Class 1a
Power dissipation
P tot
Operating and storage temperature
T j, T stg
T A=25 °C
IEC climatic category; DIN IEC 68-1
Rev. 1.21
6
Unit
1.00
W
-55 ... 150
°C
55/150/56
page 1
2005-02-25
BSS225
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
125
Thermal characteristics
Thermal resistance,
junction - minimal footprint
R thJA
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage 1)
V (BR)DSS V GS=0 V, I D=250 µA
600
-
-
Gate threshold voltage
V GS(th)
V DS=0 V, I D=94 µA
1.3
1.9
2.3
Drain-source leakage current
I D (off)
V DS=600 V, V GS=0 V,
T j=25 °C
-
-
0.1
V DS=600 V, V GS=0 V,
T j=150 °C
-
-
5
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10
100
nA
Drain-source on-state resistance
R DS(on)
V GS=4.5 V, I D=0.09 A
-
28
45
Ω
V GS=10 V, I D=0.09 A
-
30
45
|V DS|>2|I D|R DS(on)max,
I D=0.075 A
0.05
0.14
-
Transconductance
1)
g fs
S
VDS is zero-hour rated, see note at p.8
Rev. 1.21
page 2
2005-02-25
BSS225
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
99
131
-
7.6
11
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
3.1
4.4
Turn-on delay time
t d(on)
-
14.0
20.0
Rise time
tr
-
38.0
57.0
Turn-off delay time
t d(off)
-
62.0
93
Fall time
tf
-
41.0
62
Gate to source charge
Q gs
-
0.32
0.43
Gate to drain charge
Q gd
-
1.4
2.1
Gate charge total
Qg
-
3.9
5.8
Gate plateau voltage
V plateau
-
3.3
-
V
-
-
0.09
A
-
-
0.36
-
0.75
1.2
V
-
246
370
ns
-
248
373
nC
V GS=0 V, V DS=25 V,
f =1 MHz
V DD=300 V,
V GS=10 V, I D=0.09 A,
R G=6 Ω
pF
ns
Gate Charge Characteristics
V DD=400 V,
I D=0.09 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
Rev. 1.21
T A=25 °C
V GS=0 V, I F=0.09 A,
T j=25 °C
V R=300 V, I F=0.09 A,
di F/dt =100 A/µs
page 3
2005-02-25
BSS225
1 Power dissipation
2 Drain current
P tot=f(T A)
I D=f(T A); V GS≥10 V
0.1
1
0.08
0.75
I D [A]
P tot [W]
0.06
0.5
0.04
0.25
0.02
0
0
0
40
80
120
0
160
40
80
T A [°C]
120
160
T A [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T A=25 °C; D =0
Z thJA=f(t p)
parameter: t p
parameter: D =t p/T
100
103
20 µs
limited by on-state
resistance
100 µs
102
0.5
-1
10
1 ms
I D [A]
Z thJA [K/W]
0.2
1000 ms
0.1
101
0.05
0.02
0.01
100
DC
single pulse
10-3
10-1
1
10
100
1000
V DS [V]
Rev. 1.21
10-5
10-4
10-3
10-2
10-1
100
101
102
103
t p [s]
page 4
2005-02-25
BSS225
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
0.3
40
10 V
2.6 V
3V
3.2 V
3.6 V
3.8 V
4V
5V
38
0.25
4V
5V
36
10 V
34
3.8 V
0.15
R DS(on) [Ω]
I D [A]
0.2
3.6 V
0.1
0.05
32
30
28
3.2 V
26
3V
24
22
2.6 V
0
20
0
1
2
3
4
5
6
7
8
9
10
0
0.1
0.2
V DS [V]
0.3
0.4
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
0.3
0.3
0.25
0.2
I D [A]
g fs [S]
0.2
0.1
0.15
0.1
0.05
0
0
0
1
2
3
4
Rev. 1.21
0.00
0.10
0.20
0.30
I D [A]
V GS [V]
page 5
2005-02-25
BSS225
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=0.1 A; V GS=10 V
V GS(th)=f(T j); V DS=VGS; I D=94 µA
parameter: I D
130
2.8
120
2.4
110
98 %
100
2
80
V GS(th) [V]
R DS(on) [Ω]
90
70
60
98 %
50
40
typ
1.6
2%
1.2
0.8
30
typ
20
0.4
10
0
0
-60
-20
20
60
100
140
-60
-20
20
60
100
140
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C
I F=f(V SD)
parameter: T j
103
100
150 °C
25 °C
150 °C, 98%
102
10-1
25 °C, 98%
I F [A]
C [pF]
Ciss
101
10-2
Coss
Crss
100
10-3
0
10
20
30
40
50
0.4
0.8
1.2
1.6
2
2.4
2.8
V SD [V]
V DS [V]
Rev. 1.21
0
page 6
2005-02-25
BSS225
13 Typ. gate charge
14 Drain-source breakdown voltage
V GS=f(Q gate); I D=0.1 A pulsed
V BR(DSS)=f(T j); I D=250 µA
parameter: V DD
700
12
680
300 V
10
660
640
V BR(DSS) [V]
V GS [V]
8
480 V
120 V
6
4
620
600
580
560
540
2
520
500
0
0
0.5
1
1.5
2
2.5
3
3.5
4
Q gate [nC]
Rev. 1.21
-60
-20
20
60
100
140
T j [°C]
page 7
2005-02-25
BSS225
Package Outline:
Footprint:
Packaging:
Dimensions in mm
note:
Due to small size of the package, creeping currents between leads external to the package can occur in
the application. Extra protection from contamination for the package (i.e. protective laquer) is necessary to
maintain the values, specified in this document. Values given in this document are only valid for 0 hour
lifetime, if no suitable external protection is applied.
Rev. 1.21
page 8
2005-02-25
BSS225
Published by
Infineon Technologies AG
Bereich Kommunikation
St.-Martin-Straße 53
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as
warranted characteristics.
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We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
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For further information on technology, delivery terms and conditions and prices, please contact your
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(see address list).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies office.
Infineon Technologies' components may only be used in life-support devices or systems with the
expressed written approval of Infineon Technologies if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.21
page 9
2005-02-25
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