SSM3J118TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J118TU High-Speed Switching Applications 4 V drive • Low ON-resistance: Unit: mm Ron = 480 mΩ (max) (@VGS = −4 V) 2.1±0.1 Ron = 240 mΩ (max) (@VGS = −10 V) 1.7±0.1 Unit Drain–source voltage VDS −30 V Gate–source voltage VGSS ± 20 V DC ID −1.4 Pulse IDP −2.8 PD (Note 1) 800 PD (Note 2) 500 Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Drain current Drain power dissipation 1 3 2 0.166±0.05 Rating A 0.7±0.05 Symbol 2.0±0.1 Characteristic 0.65±0.05 Absolute Maximum Ratings (Ta = 25°C) +0.1 0.3 -0.05 • mW 1: Gate 2: Source 3: Drain Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a ceramic board. (25.4 mm × 25.4 mm × 0.8 t, Cu Pad: 645 mm2 ) Note 2: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 ) UFM JEDEC ― JEITA ― TOSHIBA 2-2U1A Weight: 6.6 mg (typ.) Electrical Characteristics (Ta = 25°C) Characteristic Drain–source breakdown voltage Symbol Test Condition Min Typ. Max V (BR) DSS ID = −1 mA, VGS = 0 −30 ⎯ ⎯ V (BR) DSX ID = −1 mA, VGS = + 20 V −15 ⎯ ⎯ Unit V Drain cutoff current IDSS VDS = −30 V, VGS = 0 ⎯ ⎯ −1 μA Gate leakage current IGSS VGS = ±16 V, VDS = 0 ⎯ ⎯ ±1 μA −1.2 ⎯ −2.6 V S Vth VDS = −5 V, ID = −1 mA Forward transfer admittance ⏐Yfs⏐ VDS = −5 V, ID =− 0.65 A (Note 3) 0.8 1.5 ⎯ Drain–source ON-resistance RDS (ON) ID = −0.65 A, VGS = −10 V (Note 3) ⎯ 180 240 ID = −0.4 A, VGS = −4 V (Note 3) ⎯ 360 480 Gate threshold voltage mΩ Input capacitance Ciss VDS = −15 V, VGS = 0, f = 1 MHz ⎯ 137 ⎯ pF Output capacitance Coss VDS = −15 V, VGS = 0, f = 1 MHz ⎯ 39 ⎯ pF Reverse transfer capacitance Crss VDS = −15 V, VGS = 0, f = 1 MHz ⎯ 20 ⎯ pF ton VDD = −15 V, ID = −0.65 A, ⎯ 15 ⎯ toff VGS = 0 to −4 V, RG = 10 Ω ⎯ 14 ⎯ ⎯ 0.85 1.2 Switching time Turn-on time Turn-off time Drain–source forward voltage VDSF ID = 1.4 A, VGS = 0 V (Note 3) ns V Note 3: Pulse test 1 2007-11-01 SSM3J118TU Switching Time Test Circuit (a) Test circuit 0 (b) VIN OUT 0V 10% IN RG −4 V 10 μs (c) VOUT VDD VDD = −15 V RG = 10 Ω D.U. < = 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C Marking 90% −4 V RL VDS (ON) 90% 10% VDD tr ton tf toff Equivalent Circuit (top view) 3 3 JJA 1 2 1 2 Precaution Vth can be expressed as the voltage between gate and source when the low operating current value is ID = −1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2007-11-01 SSM3J118TU ID – VDS ID – VGS –3.0 –10 Common Source VDS = −5 V –6 V (A) (A) –2.0 –1 ID –4 V –3.6 V –1.5 VGS = –3.3 V –1.0 –0.1 Drain current Drain current ID –10 V –2.5 Ta = 100 °C 25 °C –0.01 −25 °C –0.5 –0.001 Common Source Ta = 25°C 0 0 –0.2 –0.4 –0.6 –0.8 Drain–source voltage VDS –0.0001 0 –1 (V) –0.5 –1.0 –1.5 VGS –3.5 –4.0 (V) 1000 ID = −0.65 A 900 Ta = 25°C 800 700 600 500 25 °C 400 Ta =100 °C 300 200 −25 °C 100 0 –2 –4 –6 Gate–source voltage –8 VGS Common Source 900 Common Source Drain–source ON-resistance RDS (ON) (mΩ) Drain–source ON-resistance RDS (ON) (mΩ) –3.0 RDS (ON) – ID RDS (ON) – VGS 800 700 600 500 VGS = – 4.0V 400 300 200 – 10 V 100 0 –10 0 –0.5 –1.0 (V) RDS (ON) – Ta –2.0 ID –2.5 –3.0 (A) Vth – Ta –2.0 Vth (V) Common Source Gate threshold voltage 800 600 ID = −0.4 A / VGS = –4.0 V 400 200 0 −50 –1.5 Drain current 1000 Drain–source on-resistance RDS (ON) (mΩ) –2.5 Gate–source voltage 1000 0 –2.0 –0.65 A / –10 V –1.5 –1.0 –0.5 Common source VDS = −5 V 0 0 50 Ambient temperature 100 Ta −50 150 (°C) ID = −1 mA 0 50 Ambient temperature 3 100 Ta 150 (°C) 2007-11-01 SSM3J118TU IDR – VDS 10 10 Common Source (A) Common Source VDS = −5 V 1 1 0.3 0.1 –0.01 Ta = 25°C IDR Ta = 25°C 3 –1 –0.1 Drain current ID IDR G S 0.1 Ta = 100 °C 0.01 25 °C 0.001 −25 °C 0.0001 0 –10 D VGS = 0 V Drain reverse current Forward transfer admittance ⎪Yfs⎪ (S) |Yfs| – ID 0.2 (A) 0.4 0.6 Drain–source voltage 0.8 1.0 VDS 1.2 (V) t – ID C – VDS 600 1000 toff (ns) Switching time Capacitance 100 tf t 300 C (pF) 500 Ciss 100 50 Coss 30 10 ton tr Crss 10 –0.1 –1 –10 Drain–source voltage 1 –0.01 –100 VDS –0.1 Drain current (V) Cu Pad : 645 mm ) (25.4 x 25.4 x 0.8 mm Cu Pad : 645 mm ) Transient thermal impedance Rth (°C/W) (mW) (A) c 2 (25.4 x 25.4 x 1.6 mm b: Mounted on a ceramic board PD Drain Power Dissipation ID 600 a: Mounted on an FR4 board 2 b b a 100 600 a 400 10 a: Mounted on a ceramic board 200 0 –40 –10 t – ID PD – Ta 1000 800 –1 (25.4 x 25.4 x 0.8 mm 2 Cu Pad : 645 mm ) b: Mounted on an FR4 board 1 –20 0 20 40 60 80 Ambient temperature 0.001 100 120 140 160 Ta 2 (25.4 x 25.4 x 1.6 mm Cu Pad : 645 mm ) c: Mounted on an FR4 board 2 (25.4 x 25.4 x 1.6 mm Cu Pad : 0.36 mm x 3) 0.01 0.1 1 Pulse Width (°C) 4 10 100 600 tw (s) 2007-11-01 SSM3J118TU RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2007-11-01