Infineon BUP212 Low forward voltage drop high switching speed low tail current latch-up free avalanche rated Datasheet

Infineon
BUP 212
IGBT
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Avalanche rated
Pin 2
Pin 1
G
Type
VCE
IC
BUP 212
1200V 22A
Pin 3
C
E
Package
Ordering Code
TO-220 AB
Q67040-A . . . . .
Q67040-A4408
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCE
Emitter-collector voltage
VEC
Collector-gate voltage
VCGR
RGE = 20 kΩ
Values
Unit
1200
V
1200
Gate-emitter voltage
VGE
DC collector current
IC
± 20
A
TC = 25 °C
22
TC = 110 °C
8
Pulsed collector current, tp = 1 ms
ICpuls
TC = 25 °C
44
TC = 110 °C
16
EAS
Avalanche energy, single pulse
mJ
IC = 8 A, VCC = 50 V, RGE = 25 Ω
L = 300 µH, Tj = 25 °C
10
Ptot
Power dissipation
TC = 25 °C
W
125
Chip or operating temperature
Tj
-55 ... + 150
Storage temperature
Tstg
-55 ... + 150
Semiconductor Group
1
°C
May-05-1997
Infineon
BUP 212
Maximum Ratings
Parameter
Symbol
DIN humidity category, DIN 40 040
-
IEC climatic category, DIN IEC 68-1
-
Values
E
Unit
-
55 / 150 / 56
Thermal Resistance
≤1
RthJC
Thermal resistance, chip case
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Static Characteristics
Gate threshold voltage
VGE(th)
VGE = VCE, IC = 0.3 mA, Tj = 25 °C
V
4.5
5.5
6.5
VGE = 15 V, IC = 8 A, Tj = 25 °C
-
2.5
3
VGE = 15 V, IC = 8 A, Tj = 125 °C
-
3.1
3.7
VGE = 15 V, IC = 16 A, Tj = 25 °C
-
3.4
-
VGE = 15 V, IC = 16 A, Tj = 125 °C
-
4.3
-
Collector-emitter saturation voltage
Zero gate voltage collector current
VCE(sat)
ICES
VCE = 1200 V, VGE = 0 V, Tj = 25 °C
Gate-emitter leakage current
mA
-
-
0.4
IGES
VGE = 25 V, VCE = 0 V
nA
-
-
120
AC Characteristics
Transconductance
gfs
VCE = 20 V, IC = 8 A
Input capacitance
4
pF
-
600
800
-
60
90
-
38
55
Crss
VCE = 25 V, VGE = 0 V, f = 1 MHz
Semiconductor Group
-
Coss
VCE = 25 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
5
Ciss
VCE = 25 V, VGE = 0 V, f = 1 MHz
Output capacitance
S
2
May-05-1997
Infineon
BUP 212
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Switching Characteristics, Inductive Load at Tj = 125 °C
Turn-on delay time
td(on)
ns
VCC = 600 V, VGE = 15 V, IC = 8 A
RGon = 150 Ω
Rise time
-
55
110
-
50
100
-
380
570
-
80
120
tr
VCC = 600 V, VGE = 15 V, IC = 8 A
RGon = 150 Ω
Turn-off delay time
td(off)
VCC = 600 V, VGE = -15 V, IC = 8 A
RGoff = 150 Ω
Fall time
tf
VCC = 600 V, VGE = -15 V, IC = 8 A
RGoff = 150 Ω
Semiconductor Group
3
May-05-1997
BUP 212
Infineon
Power dissipation
Ptot = ƒ(TC)
parameter: Tj ≤ 150 °C
Collector current
IC = ƒ(TC)
parameter: VGE ≥ 15 V , Tj ≤ 150 °C
130
26
W
A
110
Ptot
22
IC
100
20
90
18
80
16
70
14
60
12
50
10
40
8
30
6
20
4
10
2
0
0
20
40
60
80
100
120
°C
0
0
160
20
40
60
80
100
120
°C
TC
160
TC
Safe operating area
IC = ƒ(VCE)
parameter: D = 0, TC = 25°C , Tj ≤ 150 °C
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
IGBT
10 1
10 2
tp = 13.0µs
K/W
A
IC
ZthJC
10 0
10 1
100 µs
10 -1
D = 0.50
0.20
10 0
0.10
1 ms
0.05
10 -2
0.02
0.01
single pulse
10 ms
10
-1
10
0
10
1
10
2
DC 3
10
10 -3
-5
10
V
VCE
Semiconductor Group
10
-4
10
-3
10
-2
10
-1
s 10
0
tp
4
May-05-1997
BUP 212
Infineon
Typ. output characteristics
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 µs, Tj = 25 °C
IC = f (VCE)
parameter: tp = 80 µs, Tj = 125 °C
20
20
A
IC
16
14
A
17V
15V
13V
11V
9V
7V
IC
16
14
12
12
10
10
8
8
6
6
4
4
2
2
0
0
1
2
3
V
0
0
5
VCE
17V
15V
13V
11V
9V
7V
1
2
3
V
5
VCE
Typ. transfer characteristics
IC = f (VGE)
parameter: tp = 80 µs, VCE = 20 V
25
A
22
IC
20
18
16
14
12
10
8
6
4
2
0
0
2
4
Semiconductor Group
6
8
10
V
14
VGE
5
May-05-1997
BUP 212
Infineon
Typ. switching time
Typ. switching time
t = f (IC) , inductive load , Tj = 125°C
t = f (RG) , inductive load , Tj = 125°C
par.:VCE=600V, VGE = ±15V, IC =8 A
par.:VCE=600V, VGE = ±15V, RG =153Ω
10 3
10 3
t
tdoff
t
tdoff
ns
tr
10 2
ns
tf
tdon
tr
10 2
tf
tdon
10 1
0
4
8
12
16
20
24
A
IC
10 1
0
30
50 100 150 200 250 300 350 400
Typ. switching losses
Typ. switching losses
E = f (IC) , inductive load , Tj = 125°C
E = f (RG) , inductive load , Tj = 125°C
par.:VCE=600V, VGE = ±15V, IC =8 A
par.:VCE=600V, VGE = ±15V, RG =153Ω
E
10
10
mWs
mWs
8
Ω
500
RG
E
8
7
7
6
6
5
5
Eon
4
4
3
3
Eon
2
2
Eoff
1
0
0
1
4
8
12
16
20
24
A
0
0
30
IC
Semiconductor Group
Eon
50 100 150 200 250 300 350 400
Ω
500
RG
6
May-05-1997
BUP 212
Infineon
Typ. capacitances
Typ. gate charge
VGE = ƒ(QGate)
parameter: IC puls = 15 A
C = f (VCE)
10 4
20
V
pF
VGE
16
C
600 V
14
800 V
10 3
12
Ciss
10
8
10 2
6
Coss
4
Crss
2
0
0
10
20
30
40
50
60
70
80
nC 100
10 1
0
5
10
15
20
25
30
V
40
VCE
QGate
Short circuit safe operating area
Reverse biased safe operating area
ICsc = f (VCE) , Tj = 150°C
parameter: VGE = ± 15 V, tsc ≤ 10 µs, L < 25 nH
ICpuls = f (VCE) , Tj = 150°C
parameter: VGE = 15 V
10
2.5
ICsc/IC(90°C)
ICpuls/IC
6
1.5
4
1.0
2
0.5
0
0.0
0
200
400
Semiconductor Group
600
800
1000 1200
V
1600
VCE
7
0
200
400
600
800
1000 1200
V
1600
VCE
May-05-1997
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