PHILIPS BYV32-150 Rectifier diodes ultrafast Datasheet

Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYV32 series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated high efficiency dual
rectifier diodes in a plastic envelope,
featuring low forward voltage drop,
ultra-fast recovery times and soft
recovery characteristic. They are
intended for use in switched mode
power supplies and high frequency
circuits in general where low
conduction and switching losses are
essential.
PINNING - TO220AB
PIN
SYMBOL
BYV32Repetitive peak reverse
voltage
Forward voltage
Output current (both
diodes conducting)
Reverse recovery time
VRRM
VF
IO(AV)
trr
PIN CONFIGURATION
DESCRIPTION
1
anode 1 (a)
2
cathode (k)
3
anode 2 (a)
tab
cathode (k)
PARAMETER
MAX.
MAX.
MAX.
UNIT
100
100
150
150
200
200
V
0.85
20
0.85
20
0.85
20
V
A
25
25
25
ns
SYMBOL
tab
a1
a2
k
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
VRRM
VRWM
VR
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
IO(AV)
Output current (both diodes
conducting)1
IO(RMS)
IFRM
IFSM
I2t
Tstg
Tj
RMS forward current
Repetitive peak forward current
per diode
Non-repetitive peak forward
current per diode
I2t for fusing
Storage temperature
Operating junction temperature
CONDITIONS
MIN.
-
square wave
δ = 0.5; Tmb ≤ 115 ˚C
sinusoidal
a = 1.57; Tmb ≤ 118 ˚C
t = 25 µs; δ = 0.5;
Tmb ≤ 115 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
VRWM(max)
t = 10 ms
MAX.
-100
100
100
100
-150
150
150
150
UNIT
-200
200
200
200
V
V
V
-
20
A
-
18
A
-
28
20
A
A
-
125
137
A
A
-40
-
78
150
150
A2s
˚C
˚C
1 Neglecting switching and reverse current losses
October 1994
1
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYV32 series
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
Rth j-mb
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
per diode
both diodes conducting
in free air
Rth j-a
MIN.
TYP.
MAX.
UNIT
-
60
2.4
1.6
-
K/W
K/W
K/W
MIN.
TYP.
MAX.
UNIT
-
0.72
1.00
0.2
6
0.85
1.15
0.6
30
V
V
mA
µA
MIN.
TYP.
MAX.
UNIT
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
VF
Forward voltage (per diode)
IR
Reverse current (per diode)
IF = 8 A; Tj = 150˚C
IF = 20 A
VR = VRWM; Tj = 100 ˚C
VR = VRWM
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
Qs
Reverse recovery charge (per
diode)
Reverse recovery time (per
diode)
Peak reverse recovery current
(per diode)
Forward recovery voltage (per
diode)
IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs
-
8
12.5
nC
IF = 1 A; VR ≥ 30 V;
-dIF/dt = 100 A/µs
IF = 1 A; VR ≥ 30 V;
-dIF/dt = 50 A/µs; Tj = 100 ˚C
IF = 1 A; dIF/dt = 10 A/µs
-
20
25
ns
-
1.5
2
A
-
1
-
V
trr
Irrm
Vfr
October 1994
2
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYV32 series
I
dI
F
10
F
PF / W
BYV32
Tmb(max) / C
Vo = 0.7 V
dt
a = 1.57
2.2
8
t
130.8
2.8
rr
4
6
135.6
4
140.4
2
145.2
time
Q
I
I
R
100%
10%
s
rrm
0
Fig.1. Definition of trr, Qs and Irrm
I
126
1.9
Rs = 0.0183 Ohms
0
2
4
6
IF(AV) / A
8
150
10
Fig.4. Maximum forward dissipation PF = f(IF(AV)) per
diode; sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV).
trr / ns
F
1000
IF=10A
100
time
IF=1A
V
F
10
V
V
fr
F
1
time
Fig.2. Definition of Vfr
15
PF / W
10
dIF/dt (A/us)
trr / ns
1000
D = 1.0
Rs = 0.0183 Ohms
0.5
10
126
IF=10A
100
0.2
IF=1A
0.1
5
tp
I
D=
T
0
0
5
IF(AV) / A
10
tp
T
Tj = 100 C
138
10
t
150
15
1
Fig.3. Maximum forward dissipation PF = f(IF(AV)) per
diode; square current waveform where
IF(AV) =IF(RMS) x √D.
October 1994
100
Fig.5. Maximum trr at Tj = 25 ˚C; per diode
Tmb(max) / C
114
BYV32
Vo = 0.7 V
1
1
10
dIF/dt (A/us)
100
Fig.6. Maximum trr at Tj = 100 ˚C; per diode
3
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYV32 series
10
Irrm / A
IF / A
30
Tj=150 C
Tj=25 C
IF=10A
1
20
IF=1A
0.1
10
typ
max
0.01
10
-dIF/dt (A/us)
1
0
100
0
VF / V
1.5
1
Fig.9. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
Fig.7. Maximum Irrm at Tj = 25 ˚C; per diode
10
0.5
100 Qs / nC
IF / A
IF=10A
5A
2A
1A
IF=10A
1
IF=1A
10
0.1
Tj = 100 C
1.0
0.01
1
10
-dIF/dt (A/us)
100
Fig.8. Maximum Irrm at Tj = 100 ˚C; per diode
1.0
10
-dIF/dt (A/us)
100
Fig.10. Maximum Qs at Tj = 25 ˚C; per diode
Zth (K/W)
10
1
0.1
PD
tp
t
0.01
10 us
1 ms
0.1 s
10 s
tp / s
Fig.11. Transient thermal impedance; per diode;
Zth j-mb = f(tp).
October 1994
4
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYV32 series
MECHANICAL DATA
Dimensions in mm
4,5
max
Net Mass: 2 g
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max 1 2 3
(2x)
0,9 max (3x)
2,54 2,54
0,6
2,4
Fig.12. TO220AB; pin 2 connected to mounting base.
Notes
1. Accessories supplied on request: refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
October 1994
5
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYV32 series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1994
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
October 1994
6
Rev 1.100
Similar pages