ET401 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-3PF Features High voltage,High speed switching Low saturation voltage High reliability Applications Switching regulators Ultrasonic generators High frequency invertors General purpose power amplifiers JEDEC EIAJ (TO-3PF) - Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Base current Collector power disspation Operating junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 500 400 7 15 5 80 +150 -55 to +150 Unit V V V A A W °C °C Electrical characteristics (Tc =25°C unless otherwise specified) Item Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Base leakage current D.C. current gain Collector-Emitter saturation voltage Base-Emitter saturation voltage *1 Switching time Symbol VCBO VCEO(SUS) VEBO ICBO hFE VCE(Sat) VBE(Sat) ton tstg tf Test Conditions ICBO = 1mA IC = 200mA IEBO = 1mA VCBO = 500V IC = 6A, VCE = 5V IC = 6A, IB = 1A Min. Typ. Max. Units 1.0 V V V mA 1.0 1.5 0.5 1.5 0.15 V V µs µs µs 500 400 7 10 IC = 7.5A, IB1 = 1.5A IB2 = -3A, RL = 20 ohm Pw = 20µs Duty=<2% 0.25 1.0 0.07 Thermal characteristics Item Thermal resistance Symbol Rth(j-c) Test Conditions Junction to case Min. Typ. Max. Units 1.56 °C/W 1 ET401 FUJI POWER TRANSISTOR D.C. current gain hFE Collector-Emitter voltage VCE[V] Characteristics Collector current IC[A] Base current IB[A] DC Current Gain Collector current IC[A] Saturation voltage VCE(sat), VBE(sat)[V] Collector Output Characteristics Collector current IC[A] Base and Collector Saturation Voltage Collector-Emitter voltage VCE[V] Safe Operating Area Switching time ton, tstg, tf [µs] *1 Switching Time Test Circuit Collector current IC[A] Switching Time 2