TA2069AF TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA2069AF 3V Stereo Headphone Amplifier (3V USE) The TA2069AF is developed for play−back stereo headphone equipments (3V use). It is built in dual preamplifiers, dual OCL power amplifiers, motor governor, DC volume control and volume limiter etc. Features · Built−in preamplifier Input coupling condenser−less Built−in input capacitor for reducing buzz noise Low noise: Vni = 1.2 µVrms (typ.) · Built−in power amplifier OCL (output condenser−less) Voltage gain : GV = 31dB (typ.) Weight: 0.32g (typ.) · Built−in motor governor Current proportion type · Built−in DC volume control function DC volume maximum attenuation : ATT = 82dB (typ.) · Built−in volume limiter function · Built−in bass boost function · Operating supply voltage range (Ta = 25°C) PRE + PW: VCC (opr) = 1.8~3.6V GVN: VCC (opr) = 2.1~3.6V (motor voltage = 1.8V) · Low supply current (VCC = 3V, f = 1kHz, Ta = 25°C, typ.) PRE + PW No Signal Output Power 0.1mW × 2 0.5mW × 2 RL = 16Ω 9.5mA 14.2mA 19.5mA RL = 32Ω 9.5mA 12.5mA 16.5mA GVN: ICC = 2.5mA 1 2002-10-30 TA2069AF Block Diagram OFF M ON VREF 24 INB 23 PRE OUTB NFB 22 21 20 PW INB RF IN VLIM 19 18 GVN VCC VCC 17 Rt 15 16 14 GVN CTL 13 GVN OUT RIPPLE FILTER PREB VOL. VREF LIMITER VOL. PW A PW B PREA PW C VOL. CONTROL 1 PRE GND 2 3 INA 4 NFA 6 5 PRE OUTA PW INA 7 VCTL 8 OUTB 10 9 OUTA OUTC PW INC 11 PW GND 12 GVN GND OUTA RL BST SW VREF BST : OFF 2 OUTC RL OUTB 2002-10-30 TA2069AF Terminal Explanation Terminal Voltage: Typical terminal voltage at no signal with test circuit (VCC = 3V, Ta = 25°C) No. Terminal Name 1 PRE GND 2 INA 23 INB 3 NFA 22 NFB 4 PRE OUTA Function Internal Circuit Terminal Voltage (V) ― 0 The GND, except for power drive stage and motor governer stage. Input of preamplifier 3 2 PRE OUTB 5 PW INA 1.2 500Ω NF of preamplifier 1.2 VREF VCC Output of preamplifier 21 RF 500Ω 1.2 4 5 10KΩ Input of power amplifier 20 6 RF 1.2 VREF PW INB VCTL 18 VLIM 7 OUTB 8 OUTA 9 OUTC The terminal of DC volume control ・This terminal can be used also for VLIM terminal. VCC VREF ― VREF The terminal of volume limiter level control ・This terminal can be used also for VCTL terminal. 18 6 ― VCC Output of power amplifier 7 3 1.2 2002-10-30 TA2069AF No. Terminal Name Function Terminal Voltage (V) Internal Circuit 20kΩ VREF 10 10 PW INC Input of center amplifier 1.2 30kΩ 2kΩ VREF 11 PW GND GND for power drive stage ― 0 12 GVN GND GND for motor governor stage ― 0 M 13 GVN OUT Motor terminal ― 16 15 13 14 14 GVN CTL The terminal of motor speed control ― 15 Rt The terminal of amateur compensation resistor ― 16 GVN VCC VCC for motor governor stage. 3 17 VCC VCC for preamplifier stage and power amplifier stage. 19 RF IN Ripple filter of power supply VREF Reference voltage ・Preamplifier and power amplifier operate on this reference. 3 24 19 2.5 4.7kΩ 4kΩ VCC 1.3kΩ 1.2 10kΩ 24 ― 4 2002-10-30 TA2069AF Application Note 1. VCC and GND This IC has two VCC terminals and three GND terminals. Pattern layout should be designed carefully to reduce the common impedance. VCC VCC (pin 17): Preamplifier stage and power amplifier stage. GVN VCC (pin 16): Motor governor stage. GND PRE GND (pin 1): Preamplifier stage and power amplifier stage except the power drive stage. PW GND (pin 11): Power drive stage of power amplifier. GVN GND (pin 12): Motor governor stage. 2. VREF It is necessary to stabilize the VREF circuit, the internal circuit operate on this reference. 3. Preamplifier Input signal should be applied to VREF standard, otherwise pop noise become bigger when VCC is turned on and off. 4. Power amplifier It is necessary to insert the coupling capacitor through the PW IN terminal. In case that DC current or DC voltage is applied to the PW IN terminal, the internal circuit has unbalance and the power amplifier doesn't operate normally. Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VCC 4 V Supply voltage Power dissipation PD (Note 1) 400 (Note 2) 925 mW Output current (PW AMP.) IO (PW) 200 mA Output current (GVN) IO (GVN) 700 mA Operating temperature Topr -25~75 °C Storage temperature Tstg -55~150 °C (Note 1) IC only : Derated above Ta = 25°C in the proportion 3.2mW / °C (Note 2) IC + PCB (TOSHIBA typical PCB): Derated above Ta = 25°C in the proportion 7.4mW / °C 5 2002-10-30 TA2069AF Electrical Characteristics Unless otherwise specified, VCC = 3V, Ta = 25°C, f = 1kHz, SW2: a, SW5: a Preamplifier: Rg = 2.2kΩ, RL = 10kΩ, SW1: ON, SW3: b, SW4: b Power amplifier: Rg = 600Ω, RL = 16Ω, Vol: Max, SW1: OPEN, SW3: a, SW4: a Motor governor: Im = 100mA, SW1: OPEN, SW3: b, SW4: b Symbol Test Circuit Quiescent supply current ICCQ ¾ Open loop voltage gain GVO Closed loop voltage gain Motor Governor Power AMP. Pre AMP. Characteristic Min. Typ. Max. Unit PRE + PW + GVN Vin = 0, VOL: Min, SW4: b ¾ 12 18 mA ¾ Vo = -10dBV, SW2: b ¾ 86 ¾ dB GVC ¾ Vo = -10dBV ¾ 35 ¾ dB maximum output voltage Vom ¾ THD = 1% 550 720 ¾ mVrms Total harmonic distortion THD1 ¾ Vo = -10dBV ¾ 0.02 0.3 % Equivalent input noise voltage Vni ¾ Rg = 2.2kΩ, SW1: OPEN BPF = 20Hz~20kHz, NAB (GV = 35dB, f = 1kHz) ¾ 1.2 2.4 µVrms Cross talk CT1 ¾ Vo = -10dBV ¾ 70 ¾ dB Ripple rejection ratio RR1 ¾ fr = 100Hz, Vr = -20dBV ¾ 48 ¾ dB Voltage gain 1 GV1 ¾ 29 31 33 dB Channel balance CB ¾ -1.5 0 +1.5 dB Voltage gain 2 GV2 ¾ Vo = -10dBV, SW5: b ¾ 5 ¾ dB Output power 1 Po1 ¾ RL = 16Ω, THD = 10% 17 28 ¾ mW Output power 2 Po2 ¾ RL = 32Ω, THD = 10% ¾ 20 ¾ mW Total harmonic distortion THD2 ¾ Po = 1mW ¾ 0.5 ¾ % Output noise voltage 1 Vno1 ¾ Rg = 600Ω, SW3: b BPF = 20Hz~20kHz ¾ 270 400 µVrms Output noise voltage 2 Vno2 ¾ Rg = 600Ω, SW3: b SW5: b, BPF = 20Hz~20kHz ¾ 45 ¾ µVrms Ripple rejection ratio RR2 ¾ fr = 100Hz, Vr = -20dBV ¾ 52 ¾ dB Cross talk CT2 ¾ Vo = -10dBV ¾ 32 ¾ dB DC volume maximum attenuation ATT ¾ Vo = -10dBV SW4: a→b (VOL: Max→min) ¾ 82 ¾ dB Supply current ICC ¾ Im = 0 ¾ 2.5 4.3 mA Saturation voltage VCE (sat) ¾ Im = 200mA ¾ ¾ 0.5 V Reference voltage VREF ¾ Im = 100mA 0.76 0.81 0.86 V Reference voltage fluctuation 1 ∆VREF1 ¾ VCC = 2.1~3.6V ¾ 0.25 ¾ %/V Reference voltage fluctuation 2 ∆VREF2 ¾ Im = 25~250mA ¾ 0.003 ¾ % / mA Reference voltage fluctuation 3 ∆VREF3 ¾ Ta = -25~75°C ¾ 0.005 ¾ % / °C K ¾ 34.5 37.5 40.5 Current ratio fluctuation 1 ∆K1 ¾ VCC = 2.1~3.6V ¾ 0.25 ¾ %/V Current ratio fluctuation 2 ∆K2 ¾ Im = 25~250mA ¾ 0.08 ¾ % / mA Current ratio fluctuation 3 ∆K3 ¾ Ta = -25~75°C ¾ 0.005 ¾ % / °C Current ratio Test Condition Vo = -10dBV 6 2002-10-30 TA2069AF Test Circuit Rg = 600 Ω 10kΩ PW INB (b) 1 µF 600 Ω VREF 470 Ω 470 kΩ (b) 47 µF 47 µF 8.2kΩ 100 µF 2.2kΩ 5Ω 180 Ω 1 µF 3.6 kΩ 5 kΩ 24 23 22 21 20 19 18 17 16 15 14 13 VREF INB NFB PRE OUTB PW INB RF IN VLIM PW VCC GVN VCC Rt GVN CTL GVN OUT OUTA OUTC PW INC PW GND GVN GND 9 10 11 12 SW1a TA2069AF PRE GND INA NFA PRE OUTA 1 2 3 4 PW INA VCTL OUTB 6 7 5 8 470kΩ 22µF 470Ω SW4 (a) (b) 8200 pF (a) 220µF (b) SW2a 18 kΩ 1 µF PRE OUTA PW OUTA RL PW OUTC 10 kΩ (a) SW3a PW INA VREF RL PW OUTB 1 µF 2.2kΩ 8200 pF 10 kΩ PRE INA 1000pF 1000pF Rg = 600 Ω 22 µF Rg = 600 Ω 22 µF (a) SW5 4.3kΩ SW2b 220 µF (b) (a) 18 kΩ PRE INB SW1b VCC SW3b 1 µF VREF PRE OUTB (a) Rg = 600 Ω 600 Ω (b) VREF 7 2002-10-30 TA2069AF Characteristic Curves Unless otherwise specified VCC = 3V, Ta = 25°C, f = 1kHz Preamplifier: Rg = 2.2kΩ, RL = 10kΩ Power amplifier: Rg = 600Ω, RL = 16Ω, Vol = max. Motor governor: Im = 100mA ICCQ, ICC – VCC VO (DC) – VCC 2.5 (V) 15 ICCQ (PRE + PW + GVN, Vol: MIN.) 10 5 ICC (GVN: Im = 0) 0 0 1.5 2.0 2.5 3.0 Supply voltage VCC 3.5 CT (dB) 60 40 GVC 20 100 1k Frequency f 10k Total harmonic distortion THD (%) (V) 100 1k 10k 100k 1000 10000 (Hz) THD – Vo 10 3 1 f = 10kHz 3 f = 100kHz 0.1 f = 1kHz 0.03 0.01 1 4.0 4.0 70 PRE 3.5 3.5 60 Frequency f 200 3.0 3.0 CT – f (Hz) 500 2.5 2.5 Vo = −10dBV 80 10 100k THD = 1 % 2.0 2.0 50 Vom – VCC PRE 1.5 40 Cross talk Open loop voltage gain GVO (dB) Closed loop voltage gain GVC (dB) 0.5 PRE GVO 1.5 1.0 Supply voltage VCC 80 100 0 VREF PW OUT, PRE OUT 0 4.0 Vo = −10dBV 1000 1.5 (V) 100 0 10 2.0 GVO, GVC – f PRE Maximum output voltage Vom (mVrms) Output DC voltage VO (DC) Quiescent supply current ICCQ (mA) Supply current ICC (mA) 20 10 100 Output voltage Vo (mVrms) Supply voltage VCC (V) 8 2002-10-30 TA2069AF Vni – VCC PRE (dB) 10 10 Ripple rejection ratio RR Equivalent input noise voltage Vni (µVrms) PRE 20 5 2 1 0.5 0 1.5 2.0 2.5 3.0 Supply voltage VCC fr = 100Hz Vr = −20dBV 20 30 40 50 60 70 80 0 4.0 1.5 2.0 (V) 2.5 3.0 Supply voltage VCC GV – f PW 60 3.5 RR – VCC PW 3.5 4.0 (V) CT – f Vo = − 10dBV Vo = −10dBV CT (dB) 50 40 BST = ON Cross talk Voltage gain GV (dB) 0 BST = OFF 30 10 BST = ON 20 BST = OFF 30 40 50 20 20 100 1k 10k Frequency f Total harmonic distortion THD (%) Output power Po (mW) PW THD = 10% 32Ω 10 1.5 2.0 2.5 1ｋ Frequency f RL = 16Ω 2 0 100 (Hz) Po – VCC PW 100 60 20 100k 3.0 3.5 30 Supply voltage VCC (V) 100ｋ (Hz) THD – Po VCC = 3V RL = 16Ω 10 3 f = 10kHz 1 100Hz 1kHz 0.2 0.2 4.0 10ｋ 1 10 100 Output power Po (mW) 9 2002-10-30 TA2069AF Vo – Vol. PW ratio − 10 Volume resistance 0dB = −10dBV (dB) − 30 − 50 − 70 − 90 0 0.2 0.4 0.6 0.8 Volume ratio 200 100 Output noise voltage Output voltage Vo Resistance (PIN(6) − GND) == (µVrms) Volume Vno – Vol. PW 500 Vno 10 Volume resistance 50 20 10 0 1 Resistance (PIN(6) − GND) = 0.2 0.4 Volume ratio Ripple rejection ratio RR (dB) Resistance (PIN(6) − GND) 50 Volume resistance fr = 100Hz, Vr = −20dBV 60 70 80 0 0.2 0.4 0.5 0.8 1 7.5 5.0 2.5 ∆VREF 0.0 ∆K − 2.5 − 5.0 − 7.5 1.5 2.0 3.0 3.5 4.0 ICCQ, ICC – Ta GVN ICCQ (mA) ICC (mA) 20 5 ∆VREF Quiescent supply current Supply current (mV) Reference voltage fluctuation ∆VREF Current ratio fluctuation ∆K ∆VREF, ∆K – Im 10 0 ∆K −5 −10 0 2.5 Supply voltage VCC (V) Volume ratio GVN 1 ∆VREF, ∆K – VCC GVN (mV) RR – Vol. Volume ratio = 0.8 Volume ratio Reference voltage fluctuation ∆VREF Current ratio fluctuation ∆K PW 40 0.6 50 100 150 Motor current 200 Im 250 300 (mA) 15 ICCQ (PRE + PW + GVN, Vol.=MIN) 10 5 ICC (GVM : Im = 0) 0 − 20 0 20 40 60 80 Ambient temperature Ta (°C) 10 2002-10-30 TA2069AF 760 1 0.5 − 20 0 20 40 60 Vom 36 GV 34 680 32 640 30 80 720 − 20 PRE 1 0 20 40 60 600 80 (mVrms) GV (dB) VREF, PW OUT, PRE OUT Voltage gain Ambient temperature Ta (°C) THD – Ta GV, Po – Ta PW 35 Vo = −10dBV 50 GV : Vo = −10dBV 0.01 0.001 − 20 0 20 40 60 40 GV Po Voltage gain GV 0.1 30 30 Po 20 25 80 − 20 Po = 1mW 5 2 1 0.5 0.2 0.1 − 20 0 20 40 60 20 40 60 10 80 ∆VREF, ∆K – Ta GVN 80 (mV) THD – Ta 6 Reference voltage fluctuation ∆VREF ∆K Current ratio fluctuation PW 0 Ambient temperature Ta (°C) Ambient temperature Ta (°C) 10 (mW) (dB) Po : THD = 10% Output power Output DC voltage VO (DC) (V) Vom : THD = 1% Ambient temperature Ta (°C) Total harmonic distortion THD (%) 800 GV : Vo = −10dBV 38 0 Total harmonic distortion THD (%) GV , Vom – Ta PRE 40 Maximum output voltage Vom VO (DC) – Ta 1.5 4 2 ∆K 0 ∆VREF −2 −4 −6 − 20 0 20 40 60 80 Ambient temperature Ta (°C) Ambient temperature Ta (°C) 11 2002-10-30 TA2069AF Application Note 470 kΩ 47 µF M 180 Ω 8.2kΩ 2.2kΩ 18 kΩ 1 µF 3.6 kΩ 5 kΩ 470 kΩ 22 µF 24 VREF 23 22 21 INB NFB PRE OUTB 20 19 18 PW INB RF IN VLIM 17 PW VCC 16 15 14 GVN VCC Rt GVN CTL OUTC PW INC PW GND GVN GND 9 10 11 12 13 GVN OUT TA2069AF 1 2 3 4 470kΩ 18 kΩ 22 µF 470 Ω PW INA VCTL OUTB 6 7 5 1 µF 8200 pF VREF OUTA 8 12 kΩ OUTA 0.1 µF RL 0.1 µF PRE OUTA 33kΩ NFA 0.1 µF INA 33kΩ PRE GND 10kΩ 2.2kΩ 1000pF 1000pF PRE INA 1 µF 100 µF 8200 pF PRE INB VREF 4.3kΩ 22 µF 0.1 µF VCC OUTC BST SW BST : OFF RL OUTB 12 2002-10-30 TA2069AF Package Dimensions Weight: 0.32g (typ.) 13 2002-10-30 TA2069AF RESTRICTIONS ON PRODUCT USE 000707EBA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The products described in this document are subject to the foreign exchange and foreign trade laws. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 14 2002-10-30