Anpec APM9935 Dual p-channel enhancement mode mosfet Datasheet

APM9935
Dual P-Channel Enhancement Mode MOSFET
Features
•
•
•
•
Pin Description
-20V/-6A, RDS(ON)=45mΩ(max.) @ VGS=-4.5V
5
RDS(ON)=65mΩ(max.) @ VGS=-2.5V
/
Super High Dense Cell Design for Extremely
&
,
%
,
Low RDS(ON)
5
!
$
,
Reliable and Rugged
/
"
#
,
SO-8 Package
SO − 8
5
5
Applications
•
Portable Equipment and Battery Powered
Systems.
,
Ordering and Marking Information
Lead Free Code
Handling Code
Temp. Range
Package Code
APM9935
XXXXX
P-Channel MOSFET
(TA = 25°C unless otherwise noted)
Parameter
Rating
VDSS
Drain-Source Voltage
-20
VGSS
Gate-Source Voltage
±12
*
,
XXXXX - Date Code
Absolute Maximum Ratings
Symbol
,
,
Package Code
K : SO-8
Operation Junction Temp. Range
C : -55 to 150°C
Handling Code
TU : Tube
TR : Tape & Reel
Lead Free Code
L : Lead Free Device
Blank : Orginal Device
APM9935
APM9935K :
/
/
Power Management in Notebook Computer ,
ID
Maximum Drain Current – Continuous
-6
IDM
Maximum Drain Current – Pulsed
-10
Unit
V
A
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Aug., 2003
1
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APM9935
Absolute Maximum Ratings (Cont.)
Symbol
(TA = 25°C unless otherwise noted)
Parameter
PD
Maximum Power Dissipation
TJ
Maximum Junction Temperature
Rating
TA=25°C
2.5
TA=100°C
1.0
TSTG
Storage Temperature Range
*
RθJA
Thermal Resistance – Junction to Ambient
Unit
W
150
°C
-55 to 150
°C
50
°C/W
* Surface Mounted on FR4 Board, t ≤ 10 sec.
Electrical Characteristics
Sym bol
(TA = 25°C unless otherwise noted)
Param eter
Test Condition
APM 9935
Typ. M ax.
M in.
Unit
Static
BV DSS
D rain-Source Breakdown Voltage
V G S =0V , I DS =-250µA
I DSS
Zero G ate Voltage D rain C urrent
V DS =-16V , V G S =0V
G ate T hreshold Voltage
V DS =V G S , I DS =-250µA
G ate Leakage C urrent
V G S(th)
I G SS
R DS(O N)
=
D rain-Source O n-state R esistance
=
V SD Dynam ic
D iode Forward Voltage
Total G ate C harge
Q gs G ate-Source C harge
Q gd G ate-D rain C harge
t d(O N)
Turn-on D elay Tim e
T r
Turn-on R ise Tim e
t d(O FF)
-1
ìA
-1
V
V G S =±12V , V DS =0V
±100
nA
V G S =-4.5V , I DS =-6A
45
V G S =-2.5V , I DS =-5A
65
I S =-2A , V G S =0V
>
Q g
Turn-off D elay Tim e
T f
Turn-off Fall Tim e
C iss Input C apacitance
C oss O utput C apacitance
C rss R everse Transfer C apacitance
V
-20
V DS =-4V , I DS =-6A
V G S =-4.5V
V DD =-4V , I DS =-6A ,
V G EN =-4.5V , R G =10Ω
V G S =0V , V DS =-15V
Frequency=1.0M H z
-0.5
-0.7
-0.7
-1.3
17
22
mΩ
V
nC
4.1
1.6
23
45
45
80
45
90
32
55
ns
1242
341
pF
217
Notes
a
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
b
: Guaranteed by design, not subject to production testing
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Aug., 2003
2
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APM9935
Typical Characteristics
Output Characteristics
10
8
-ID-Drain Current (A)
-VGS=2V
4
6
6
4
TJ=125°C
2
2
0
10
-VGS=3,4,5,6,7,8,9,10V
8
-ID-Drain Current (A)
Transfer Characteristics
0
1
2
3
4
5
6
7
TJ=25°C
0
0.0
8
0.5
-VDS - Drain-to-Source Voltage (V)
1.5
2.0
2.5
3.0
On-Resistance vs. Drain Current
0.08
-I DS=250uA
RDS(ON)-On-Resistance
(Ω)
-VGS(th)-Threshold Voltage (V)
(Normalized)
0.07
1.25
0.06
1.00
-VGS=2.5V
0.05
0.04
0.75
-VGS=4.5V
0.03
0.50
0.02
0.25
0.00
-50
1.0
-VGS - Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.50
TJ=-55°C
0.01
-25
0
25
50
75
0.00
100 125 150
Tj - Junction Temperature (°C)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Aug., 2003
0
1
2
3
4
5
6
7
8
9
10
-ID - Drain Current (A)
3
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APM9935
Typical Characteristics (Cont.)
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
0.12
1.8
-ID=6A
-VGS=4.5V
-ID=6A
RDS(ON)-On-Resistance (Ω)
(Normalized)
RDS(ON)-On-Resistance
(Ω)
1.6
0.10
1.4
0.08
1.0
0.04
0.8
0.02
0.00
1.2
0.06
0.6
1
2
3
4
5
6
7
8
9
0.4
-50
10
-25
0
Gate Charge
75
100
125
150
Capacitance
2000
-VDS=4V
-ID=6A
4
Frequency=1MHz
3
2
Ciss
1200
800
1
400
0
0
0
4
8
12
16
20
QG -Total Gate Charge (nC)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Aug., 2003
Capacitance (pF)
1600
-VGS-Gate-Source Voltage (V)
50
TJ - Junction Temperature
(°C)
-VGS - Gate-to-Source
Voltage (V)
5
25
Coss
Crss
0
4
8
12
16
20
-VDS - Drain-to-Source Voltage (V)
4
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APM9935
Typical Characteristics (Cont.)
Source-Drain Diode Forward Voltage
10
80
60
TJ=25°C
0.1
40
TJ=150°C
Power (W)
1
-IS-Source Current (A)
Single Pulse Power
20
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
0.01
1.4
0.1
1
10
30
Time(sec)
-VSD -Source-to-Drain Voltage (V)
Normalized Thermal Transient Impedence,
Junction to Ambient
1
Duty Cycle=0.5
D=0.2
D=0.1
0.1
Normalized Effective Transient
Thermal Impedance
2
D=0.05
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=50°C/W
3.T JM -T A=P DM Z thJA
4.Surface Mounted
D=0.02
SINGLE PULSE
0.01
1E-4
1E-3
0.01
0.1
1
10
30
Square Wave Pulse Duration (sec)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Aug., 2003
5
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APM9935
Packaging Information
E
e1
0.015X45
SOP-8 pin ( Reference JEDEC Registration MS-012)
H
e2
D
A1
A
1
L
0.004max.
Dim
Mi ll im et er s
Inche s
A
Min.
1. 35
Max .
1. 75
Min.
0. 053
Max .
0. 069
A1
D
E
0. 10
4. 80
3. 80
0. 25
5. 00
4. 00
0. 004
0. 189
0. 150
0. 010
0. 197
0. 157
H
L
e1
e2
5. 80
0. 40
0. 33
6. 20
1. 27
0. 51
0. 228
0. 016
0. 013
0. 244
0. 050
0. 020
φ 1
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Aug., 2003
1. 27BSC
0. 50BSC
8°
8°
6
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APM9935
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
temperature
Reference JEDEC Standard J-STD-020A APRIL 1999
Peak temperature
183°C
Pre-heat temperature
Time
Classification Reflow Profiles
Convection or IR/
Convection
Average ramp-up rate(183°C to Peak)
3°C/second max.
120 seconds max
Preheat temperature 125 ± 25°C)
60 – 150 seconds
Temperature maintained above 183°C
Time within 5°C of actual peak temperature 10 –20 seconds
Peak temperature range
220 +5/-0°C or 235 +5/-0°C
Ramp-down rate
6 °C /second max.
6 minutes max.
Time 25°C to peak temperature
VPR
10 °C /second max.
60 seconds
215-219°C or 235 +5/-0°C
10 °C /second max.
Package Reflow Conditions
pkg. thickness ≥ 2.5mm
and all bgas
Convection 220 +5/-0 °C
VPR 215-219 °C
IR/Convection 220 +5/-0 °C
pkg. thickness < 2.5mm and
pkg. volume ≥ 350 mm³
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Aug., 2003
7
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
Convection 235 +5/-0 °C
VPR 235 +5/-0 °C
IR/Convection 235 +5/-0 °C
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APM9935
Reliability test program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
D
P
Po
E
t
P1
Bo
F
W
Ao
D1
Ko
T2
J
C
A
B
T1
Application
SOP- 8
A
B
330 ± 1
F
5.5± 1
J
T1
T2
W
P
E
62 +1.5
C
12.75+
0.15
2 ± 0.5
12.4 ± 0.2
2 ± 0.2
12± 0. 3
8± 0.1
1.75±0.1
D
D1
Po
P1
Ao
Bo
Ko
t
2.0 ± 0.1
6.4 ± 0.1
5.2± 0. 1
1.55 +0.1 1.55+ 0.25 4.0 ± 0.1
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Aug., 2003
8
2.1± 0.1 0.3±0.013
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APM9935
Cover Tape Dimensions
Application
SOP- 8
Carrier Width
12
Cover Tape Width
9.3
Devices Per Reel
2500
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Aug., 2003
9
www.anpec.com.tw
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