2SK4002 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS V) 2SK4002 Chopper Regulator, DC-DC Converter and Motor Drive Applications 1.5 ± 0.2 Unit: mm 6.5 ± 0.2 5.2 ± 0.2 z Low drain−source ON-resistance: RDS (ON) = 4.2 Ω (typ.) 0.6 MAX. z Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) 1.6 z Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 5.5 ± 0.2 z High forward transfer admittance: |Yfs| = 1.7 S (typ.) 1.1 ± 0.2 0.9 Symbol Rating Unit Drain−source voltage VDSS 600 V Drain−gate voltage (RGS = 20 kΩ) VDGR 600 V Gate−source voltage VGSS ±30 V (Note 1) ID 2 A Pulse (t = 1 ms) (Note 1) IDP 5 A DC Drain current Pulse (t = 100 μs) (Note 1) 0.8 MAX. 5.7 2.3 2.3 1 0.6 MAX. 2 2.3 ± 0.2 Characteristic 4.1 ± 0.2 Absolute Maximum Ratings (Ta = 25°C) 3 0.6 ± 0.15 1.1 MAX. 0.6 ± 0.15 IDP 8 A Drain power dissipation (Tc = 25°C) PD 20 W Single-pulse avalanche energy (Note 2) EAS 93 mJ Avalanche current IAR 2 A Repetitive avalanche energy (Note 3) EAR 2 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C 2 1. 2. GATE DRAIN （HEAT SINK） 3. SOURSE 1 3 JEDEC ― JEITA ― TOSHIBA 2-7J2B Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case Rth (ch−c) 6.25 °C / W Thermal resistance, channel to ambient Rth (ch−a) 125 °C / W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 41 mH, RG = 25 Ω, IAR = 2 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2009-09-29 2SK4002 Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Gate−source breakdown voltage Drain cutoff current Drain−source breakdown voltage Gate threshold voltage Symbol Test Condition Min Typ. Max Unit IGSS VGS = ±25 V, VDS = 0 V — — ±10 μA V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 — — V IDSS VDS = 600 V, VGS = 0 V — — 100 μA V (BR) DSS ID = 10 mA, VGS = 0 V 600 — — V Vth VDS = 10 V, ID = 1 mA 2.0 — 4.0 V Drain−source ON-resistance RDS (ON) VGS = 10 V, ID = 1 A — 4.2 5.0 Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 1 A 0.8 1.7 — S Input capacitance Ciss — 380 — Reverse transfer capacitance Crss — 40 — Output capacitance Coss — 120 — tr — 15 — ton — 25 — Rise time Turn−on time VDS = 10 V, VGS = 0 V, f = 1 MHz Switching time pF ns Fall time tf — 20 — — 80 — — 9 — — 5 — — 4 — ≈ Turn−off time toff Total gate charge (gate−source plus gate−drain) Qg Gate−source charge Qgs Gate−drain (“Miller”) charge Qgd ≤ VDD ≈ 480 V, VGS = 10 V, ID = 2 A nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — 2 A — — 5 A — — 8 A Pulse drain reverse current (Note 1) IDRP t = 1 ms Forward voltage (diode) VDSF IDR = 2 A, VGS = 0 V — — −1.5 V Reverse recovery time trr — 1000 — ns Reverse recovery charge Qrr IDR = 2 A, VGS = 0 V dIDR / dt = 100 A / μs — 3.5 — μC t = 100 μs IDRP Marking K4002 Note 4: A line under a Lot No. identifies the indication of product Labels. Part No. (or abbreviation code) [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Lot No. Note 4 Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-09-29 2SK4002 3 2009-09-29 2SK4002 4 2009-09-29 2SK4002 RG = 25 Ω VDD = 90 V, L = 41 mH 5 EAS = B VDSS 1 ⎛ ⎞ ⋅ L ⋅ I2 ⋅ ⎜ ⎟ 2 ⎝ B VDSS − VDD ⎠ 2009-09-29 2SK4002 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. 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