EFC4612R Ordering number : ENA1477B SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EFC4612R General-Purpose Switching Device Applications Features • • • • • 2.5V drive Built-in gate protection resistor Best suited for LiB charging and discharging switch Common-drain type Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Source-to-Source Voltage Conditions Ratings VSSS VGSS Gate-to-Source Voltage Source Current (DC) IS ISP Source Current (Pulse) Total Dissipation Channel Temperature PT Tch Storage Temperature Tstg Unit 24 V 6 A PW≤10μs, duty cycle≤1% 60 A When mounted on ceramic substrate (5000mm2×0.8mm) 1.6 W 150 °C --55 to +150 °C Package Dimensions Product & Package Information unit : mm (typ) 7064-001 • Package : EFCP • JEITA, JEDEC :• Minimum Packing Quantity : 5,000 pcs./reel EFC4612R-TR 1.26 Taping Type : TR 3 Marking 1.26 4 V ±12 FN TR 2 Electrical Connection 0.22 1 0.15 1 Rg 2 0.65 2 1 : Source1 2 : Gate1 3 : Gate2 4 : Source2 0.65 1 4 LOT No. 3 0.3 Rg 3 SANYO : EFCP1313-4CC-037 Rg=200Ω 4 http://www.sanyosemi.com/en/network/ O2412 TKIM/10511 TKIM/O0709PF TKIM TC-00001996 No. A1477-1/8 EFC4612R Electrical Characteristics at Ta=25°C Parameter Symbol Source-to-Source Breakdown Voltage V(BR)SSS Zero-Gate Voltage Source Current ISSS Gate-to-Source Leakage Current IGSS Cutoff Voltage Forward Transfer Admittance Static Source-to-Source On-State Resistance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Ratings Conditions min Unit max 24 V IS=1mA, VGS=0V VSS=20V, VGS=0V Test Circuit 1 VGS(off) VGS=±8V, VSS=0V VSS=10V, IS=1mA Test Circuit 3 | yfs | VSS=10V, IS=3A Test Circuit 4 RSS(on)1 IS=3A, VGS=4.5V IS=3A, VGS=4.0V Test Circuit 5 24 39 45 mΩ RSS(on)2 Test Circuit 5 25 41 48 mΩ RSS(on)3 IS=3A, VGS=3.7V Test Circuit 5 27.5 43 50 mΩ RSS(on)4 IS=3A, VGS=3.1V Test Circuit 5 31.5 48 57 mΩ RSS(on)5 IS=3A, VGS=2.5V Test Circuit 5 33.5 58 72 mΩ td(on) tr Test Circuit 1 typ Test Circuit 2 See specified Test Circuit. Fall Time td(off) tf Total Gate Charge Qg VSS=10V, VGS=4.5V, IS=6A Forward Source-to-Source Voltage VF(S-S) IS=3A, VGS=0V Test Circuit 7 Test Circuit 6 0.5 1 μA ±10 μA 1.3 3.1 V S 20 ns 230 ns 130 ns 210 ns 7 nC 0.8 1.2 V Ordering Information Device EFC4612R-TR Package Shipping memo EFCP 5,000pcs./reel Pb Free and Halogen Free No. A1477-2/8 EFC4612R Test circuits are example of measuring FET1 side Test Circuit 1 VSSS / ISSS Test Circuit 2 IGSS(+) / (--) S2 S2 G2 G2 G1 G1 S1 S1 IT11565 Test Circuit 3 VGS(off) IT11566 Test Circuit 4 | yfs | S2 S2 G2 G2 10V 1mA G1 G1 S1 S1 IT11567 Test Circuit 5 RSS(on) IT11568 Test Circuit 6 VF(S-S) S2 S2 4.5V G2 G2 G1 G1 S1 S1 IT11569 IT11570 Test Circuit 7 td(on), tr, td(off), tf VDD=10V IS=3A RL=3.33Ω V S2 OUT VIN G2 PW=10μs D.C.≤1% G1 S1 * Note: Connect the mesurement terminal reversely if you want to measure the FET2 side. No. A1477-3/8 EFC4612R IS -- VSS VSS=10V 5 3.5 V GS=1.5V 3.0 2.5 2.0 1.5 4 3 2 1 1.0 0.5 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Source-to-Source Voltage, VSS -- V Static Source-to-Source On-State Resistance, RSS(on) -- mΩ 100 80 60 40 20 0 2 4 6 8 IS -- VF(S-S) 0.01 0 0.2 0.4 0.6 0.8 1.0 Forward Source-to-Source Voltage, VF(S-S) -- V VGS -- Qg 2.5 2.0 1.5 1.0 0.5 1 2 3 4 3A .0V, I S= V GS=4 --40 --20 0 20 40 5 Total Gate Charge, Qg -- nC 6 7 IT14686 60 80 100 120 140 5 160 IT14683 SW Time -- IS VSS=10V VGS=4.5V 3 td(off) 2 tf 100 7 tr 5 3 td(on) 2 2 3 5 7 0.1 2 3 2 5 7 1.0 3 100 7 5 3 2 10 7 5 3 2 ISP=60A PW≤10μs 10 0μ s 1m s IS=6A 1.0 7 5 3 2 0.1 7 5 3 2 5 7 10 IT14685 ASO 2 3.0 0 20 Source Current, IS -- A 3.5 0 40 IT14684 VSS=10V IS=6A 4.0 60 10 0.01 1.2 Source Current, IS -- A Gate-to-Source Voltage, VGS -- V 4.5 =3A V, I S =2.5 =3A S VG V, I S =3.1 VGS A , I S=3 =4.5V VGS Ambient Temperature, Ta -- °C Switching Time, SW Time -- ns Ta=7 5°C 25°C --25°C Source Current, IS -- A 3 2 3 2 =3.7 VGS 80 7 1.0 7 5 2.0 IT14681 =3A V, I S 100 1000 3 2 1.5 120 IT14682 VGS=0V 0.1 7 5 1.0 RSS(on) -- Ta 0 --60 10 Gate-to-Source Voltage, VGS -- V 10 7 5 0.5 Gate-to-Source Voltage, VGS -- V 140 Ta=25°C IS=3A 120 0 0 IT14720 RSS(on) -- VGS 140 0 2.0 Static Source-to-Source On-State Resistance, RSS(on) -- mΩ 0 25°C --25°C 4.0 Ta=7 5°C 4.5 Source Current, IS -- A Source Current, IS -- A 5.0 4.0V 3.1V 5.5 IS -- VGS 6 2.5V 10.0V 4.5V 6.0 10 ms 1 DC 00m op s era tio n Operation in this area is limited by RSS(on). Ta=25°C Single pulse When mounted on ceramic substrate (5000mm2×0.8mm) 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Source-to-Source Voltage, VSS -- V 2 3 5 IT14721 No. A1477-4/8 EFC4612R PT -- Ta 1.8 When mounted on ceramic substrate (5000mm2×0.8mm) Total Dissipation, PT -- W 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT14722 No. A1477-5/8 EFC4612R Taping Specification EFC4612R-TR No. A1477-6/8 EFC4612R Outline Drawing EFC4612R-TR Land Pattern Example Mass (g) Unit (0.0011) mm * For reference Unit: mm 0.65 0.65 0.3 No. A1477-7/8 EFC4612R Note on usage : Since the EFC4612R is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. 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