BCV29, BCV49 NPN Silicon Darlington Transistors • For general AF applications 1 2 • High collector current 3 2 • High current gain • Complementary types: BCV28, BCV48 (PNP) • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking Pin Configuration Package BCV29 EF 1=B 2=C 3=E SOT89 BCV49 EG 1=B 2=C 3=E SOT89 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BCV29 30 BCV49 60 Collector-base voltage Unit VCBO BCV29 40 BCV49 80 Emitter-base voltage VEBO 10 Collector current IC 500 Peak collector current ICM 800 Base current IB 100 Peak base current IBM 200 Total power dissipation- Ptot 1 W 150 °C mA TS ≤ 130 °C Junction temperature Tj Storage temperature Tstg 1Pb-containing -65 ... 150 package may be available upon special request 1 2007-03-29 BCV29, BCV49 Thermal Resistance Parameter Junction - soldering point 1) 1For Symbol RthJS Value ≤ 20 Unit K/W calculation of RthJA please refer to Application Note Thermal Resistance 2 2007-03-29 BCV29, BCV49 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO V IC = 10 mA, IB = 0 , BCV29 30 - - IC = 10 mA, IB = 0 , BCV49 60 - - 40 - - 80 - - 10 - - Collector-base breakdown voltage V(BR)CBO IC = 100 µA, IE = 0 , BCV29 IC = 100 µA, IE = 0 , BCV49 Emitter-base breakdown voltage V(BR)EBO IE = 10 µA, IC = 0 Collector-base cutoff current µA I CBO VCB = 30 V, IE = 0 , BCV29 - - 0.1 VCB = 60 V, IE = 0 , BCV49 - - 0.1 VCB = 30 V, IE = 0 , TA = 150 °C, BCV29 - - 10 VCB = 60 V, IE = 0 , TA = 150 °C, BCV49 - - 10 - - 100 Emitter-base cutoff current I EBO nA VEB = 4 V, IC = 0 DC current gain1) - h FE IC = 100 µA, VCE = 1 V, BCV29 4000 - - IC = 100 µA, VCE = 1 V, BCV49 2000 - - IC = 10 mA, VCE = 5 V, BCV29 10000 - - IC = 10 mA, VCE = 5 V, BCV49 4000 - - IC = 100 mA, V CE = 5 V, BCV29 20000 - - IC = 100 mA, V CE = 5 V, BCV49 IC = 0.5 A, VCE = 5 V, BCV29 10000 - - 4000 - - IC = 0.5 A, VCE = 5 V, BCV49 2000 - - Collector-emitter saturation voltage1) VCEsat - - 1 IC = 100 mA, IB = 0.1 mA Base emitter saturation voltage 1) VBEsat - - 1.5 V IC = 100 mA, IB = 0.1 mA 1Pulse test: t < 300µs; D < 2% 3 2007-03-29 BCV29, BCV49 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. fT - 150 - MHz Ccb - 3 - pF AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 4 2007-03-29 BCV29, BCV49 DC current gain hFE = ƒ(IC) VCE = 5 V 10 6 h FE Collector-emitter saturation voltage IC = ƒ(VCEsat), hFE = 1000 BCV 29/49 EHP00325 5 10 3 ΙC EHP00322 mA 125 ˚C 10 5 BCV 29/49 150 ˚C 25 ˚C -50 ˚C 10 2 25 ˚C 5 5 -55 ˚C 10 4 10 1 5 5 10 3 10 -1 10 0 10 1 10 2 10 0 mA 10 3 0 0.5 1.0 V ΙC V CEsat Collector cutoff current ICBO = ƒ(TA) VCB = V CEmax Base-emitter saturation voltage IC = ƒ(V BEsat), hFE = 1000 10 3 ΙC BCV 29/49 1.5 EHP00323 10 4 BCV 29/49 EHP00318 nA mA Ι CBO 150 ˚C 25 ˚C -50 ˚C 10 2 max 10 3 5 10 2 typ 10 1 10 1 5 10 0 0 1.0 2.0 V 10 0 3.0 V BEsat 0 50 100 ˚C 150 TA 5 2007-03-29 BCV29, BCV49 Transition frequency fT = ƒ(IC) VCE = 5 V 10 3 BCV 29/49 Collector-base capacitance Ccb = ƒ(V CB) Emitter-base capacitance Ceb = ƒ(VEB) EHP00321 19 pF MHz CCB/CEB fT 15 13 11 10 2 CEB 9 5 7 5 CCB 3 10 1 10 0 10 1 10 2 mA 1 0 10 3 4 8 12 16 V ΙC 22 VCB/VEB Total power dissipation Ptot = ƒ(TS) Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) 1200 5 BCV 29/49 Ptot max Ptot DC mW D= Ptot tp T tp T 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 800 5 600 10 1 400 EHP00319 5 200 0 0 15 30 45 60 75 90 105 120 °C TS 10 0 10 -6 150 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 6 2007-03-29 Package SOT89 BCV29, BCV49 Package Outline 4.5 ±0.1 45˚ B 1.5 ±0.1 1) 1.6 ±0.2 0.2 MAX. 2 2.75 +0.1 -0.15 10˚ MAX. 1 ±0.2 1 0.15 4 ±0.25 1 ±0.1 1) 2.5 ±0.1 0.25 ±0.05 3 1.5 0.35 ±0.1 0.45 +0.2 -0.1 3 0.15 M B x3 0.2 B 1) Ejector pin markings possible Foot Print 1.2 1.0 2.5 2.0 0.8 0.8 0.7 Marking Layout (Example) BAW78D Type code Pin 1 2005, June Date code (YM) Manufacturer Standard Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel 0.2 4.6 12 8 Pin 1 4.3 7 1.6 2007-03-29 BCV29, BCV49 Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 8 2007-03-29