ISC BU608D Isc silicon npn power transistor Datasheet

INCHANGE Semiconductor
Product Specification
isc Silicon NPN Power Transistor
BU608D
DESCRIPTION
·High Voltage: VCEV= 400V(Min)
·Fast Switching Speed: tf= 0.5μs(Max)
·Low Saturation Voltage: VCE(sat)= 1.0V(Max)@ IC= 6A
APPLICATIONS
·Designed for use in horizontal deflection output stages
of TV’s and CRT’s
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
400
V
VCEV
Collector-Emitter Voltage
400
V
VCEO
Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
10
A
IB
Base Current
4
A
PC
Collector Power Dissipation
@ TC=25℃
90
W
TJ
Junction Temperature
150
℃
-65~150
℃
B
Tstg
Storage Temperature Range
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
BU608D
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 100mA ;IB= 0
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 6A; IB= 1.2A
1.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 6A; IB= 1.2A
1.5
V
hFE
DC Current Gain
IC= 2A; VCE= 5V;
ICEV
Collector Cutoff Current
VCE= 400V; VBE= -1.5V
15
mA
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
400
mA
Current-Gain—Bandwidth Product
IC= 0.5A ; VCE= 10V, ftest= 1MHz
C-E Diode Forward Voltage
IF= 5A
1.5
V
Fall Time
IC= 6A; IB1= -IB2= 1.2A, VCC= 40V
0.5
μs
fT
VECF
tf
isc Website:www.iscsemi.cn
CONDITIONS
MIN
TYP.
200
UNIT
V
B
B
2
MAX
15
10
MHz
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