2SD1658 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor) 2SD1658 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA) • Zener diode included between collector and base Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 ± 10 V Collector-emitter voltage VCEO 60 ± 10 V Emitter-base voltage VEBO 8 V Collector current IC 2 A Base current IB 0.5 A JEDEC ― W JEITA ― Ta = 25°C Collector power dissipation PC Tc = 25°C Junction temperature Storage temperature range 1.5 10 Tj 150 °C Tstg −55 to 150 °C TOSHIBA 2-8H1A Weight: 0.82 g (typ.) Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit COLLECTOR BASE ≈ 4 kΩ ≈ 800 Ω EMITTER 1 2009-12-21 2SD1658 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 45 V, IE = 0 ― ― 10 μA Emitter cut-off current IEBO VEB = 8 V, IC = 0 ― ― 4 mA V (BR) CEO IC = 10 mA, IB = 0 50 60 70 V Collector-emitter breakdown voltage hFE VCE = 2 V, IC = 1 A 2000 ― ― Collector-emitter saturation voltage VCE (sat) IC = 1 A, IB = 1 mA ― ― 1.5 V Base-emitter saturation voltage VBE (sat) IC = 1 A, IB = 1 mA ― ― 2.0 V VCE = 2 V, IC = 0.5 A ― 100 ― MHz VCB = 10 V, IE = 0, f = 1 MHz ― 20 ― pF ― 0.4 ― ― 4.0 ― ― 0.6 ― Collector output capacitance Turn-on time Switching time Storage time Cob ton tstg 20 μs Input IB1 IB2 Output 30 Ω fT IB2 Transition frequency IB1 DC current gain μs VCC = 30 V Fall time tf IB1 = 1 mA,IB2 = 1 mA, duty cycle ≤ 1% Marking Lot No. D1658 Part No. (or abbreviation code) Note2 Note2: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-12-21 2SD1658 IC – VCE hFE – IC 2.0 10000 200 Common emitter 185 1.6 VCE = 2 V DC current gain hFE 3000 180 1.2 175 0.8 IB = 170 μA 0.4 Tc = 100°C 1000 −55 500 300 25 100 50 0 0 0 2 4 6 8 Collector-emitter voltage 30 0.01 10 0.03 VCE (V) 0.1 VCE (sat) – IC 3 (A) VCE = 2 V 100 1 3 Collector current IC 5 Common emitter Tc = −55°C 0.3 3 IC – VBE 25 0.6 1 2.0 Common emitter IC/IB = 1000 1 0.3 Collector current IC (A) Collector-emitter saturation voltage VCE (sat) (V) Common emitter 5000 Tc = 25°C Collector current IC Collector current IC (A) 500 250 (A) 1.6 1.2 Tc = 100°C −55 0.8 25 0.4 0 0 0.8 1.6 2.4 Base-emitter voltage 3.2 4.0 VBE (V) PC – Ta 14 (W) Collector power dissipation PC Base-emitter saturation voltage VBE (sat) (V) VBE (sat) – IC Common emitter IC/IB = 1000 5 (1) Tc = Ta 3 Tc = −55°C 25 Infinite heat sink (2) No heat sink 12 (1) 8 4 (2) 100 1 0.3 1 Collector current IC 0 0 3 (A) 40 80 120 160 200 Ambient temperature Ta (°C) 3 2009-12-21 2SD1658 Safe Operating Area 5 3 IC max (pulsed)* IC max (continuous) 100 μs* 10 ms* Collector current IC (A) 1 1 ms* DC operation Tc = 25°C 0.5 0.3 0.1 0.05 0.03 0.01 1 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 3 10 VCEO max 30 100 Collector-emitter voltage VCE (V) 4 2009-12-21 2SD1658 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application with which the Product will be used with or for. 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