BCD APT27 High voltage npn transistor Datasheet

Data Sheet
HIGH VOLTAGE NPN TRANSISTOR
APT27
General Description
Features
The APT27 series are high voltage, high speed switching NPN power transistor specially designed for offline switch mode power supplies with low output
power.
·
·
·
High Switching Speed
High Collector-Emitter Voltage
Low Cost
Applications
The APT27 series is available in TO-92 package.
·
·
TO-92
Bulk packing
Battery Chargers for Mobile Phone
Power Supply for DVD/STB
TO-92
Ammo packing
Figure 1. Package Types of APT27
Pin Configuration
Z Package
(TO-92 Bulk packing)
(TO-92 Ammo Package)
3
Base
3
Base
2
Collector
2
Collector
1
Emitter
1
Emitter
Figure 2. Pin Configurations of APT27 (Top View)
Aug. 2011 Rev 1. 3
BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE NPN TRANSISTOR
APT27
Ordering Information
APT27
G1: Green
Circuit Type
TR: Ammo
Blank: Bulk
Package
Z: TO-92
Package
TO-92
Part Number
Marking ID
Packing Type
APT27Z-G1
APT27Z-G1
Bulk
APT27ZTR-G1
APT27Z-G1
Ammo
BCD Semiconductor's products, as designated with "G1" suffix in the part number, are RoHS compliant and Green.
Absolute Maximum Ratings (Note 1)
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
VCES
700
V
Collector-Emitter Voltage
VCEO
450
V
Emitter-Base Voltage
VEBO
9
V
IC
0.8
A
ICM
1.6
A
IB
0.4
A
Base Peak Current
IBM
0.8
A
Power Dissipation, TA=25oC
PTOT
0.8
W
150
oC
Collector Current
Collector Peak Current
Base Current
Operating Junction Temperature
Storage Temperature Range
-55 to 150
o
C
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Aug. 2011 Rev 1. 3
BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE NPN TRANSISTOR
APT27
Thermal Characteristics
Parameter
Thermal Resistance (Junction-to-Ambient)
Symbol
Value
Unit
θJA
156.25
oC/W
Electrical Characteristics
( TC=25oC, unless otherwise specified.)
Parameter
Collector Cut-off Current
(VBE=-1.5V)
Symbol
Conditions
ICEV
VCE=700V
Collector-Emitter Sustaining
Voltage (IB=0)
VCEO (sus)
IC=0.1mA
Collector-Emitter Saturation
Voltage
VCE(sat)
DC Current Gain
hFE
Min
Typ
Max
Unit
10
μA
450
V
0.5
IC=200mA, IB=40mA
IC=100mA, VCE=10V
15
23
40
IC=300mA, VCE=10V
6
15
30
Aug. 2011 Rev 1. 3
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BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE NPN TRANSISTOR
APT27
Typical Performance Characteristics
10
125
100
Power Derating Factor(%)
Collector Current (A)
1
0.1
0.01
0.001
75
50
25
0
0.0001
1
10
100
1000
0
25
75
100
125
150
175
200
0
Collector-Emitter Clamp Voltage (V)
Figure 4. Power Derating Curve
Figure 3. Safe Operating Areas
0.6
35
IB=50mA
0.5
0.4
25
IB=30mA
IB=25mA
0.3
IB=20mA
IB=15mA
0.2
IB=10mA
20
15
10
0
IB=5mA
0.1
VCE=5V
30
IB=45mA
IB=40mA
IB=35mA
DC Current Gain
Cllector Current Ic (A)
50
Case Temperature Tc( C)
TJ=25 C
5
0
TJ=125 C
0.0
0
2
4
6
8
10
12
Collector-Emitter Voltage (V)
0
0.01
0.1
1
Collector Current(A)
Figure 5. Static Characterstics
Figure 6. DC Current Gain
Aug. 2011 Rev 1. 3
BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE NPN TRANSISTOR
APT27
Typical Performance Characteristics
1.0
100
HFE=5
HFE=5
Base-Emitter Voltage (V)
Collector-Emitter Voltage (V)
0.9
10
1
0.1
0
TJ=25 C
0.8
0.7
0
TJ=25 C
0.6
0
TJ=125 C
0
TJ=125 C
0.01
0.05
0.1
0.5
0.05
1
0.1
1
Collector Current (A)
Collector Current (A)
Figure 7. Collector-Emitter Saturation Region
Figure 8. Base-Emitter Saturation Voltage
Aug. 2011 Rev 1. 3
BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE NPN TRANSISTOR
APT27
Mechanical Dimensions
TO-92 (Bulk Packing)
Unit: mm(inch)
1.000(0. 039)
3.430(0.135)
MIN
3.700(0.146)
3.300(0.130)
1.400(0.055)
0.320(0. 013)
0.510(0. 020)
0. 000(0. 000)
0. 380(0. 015)
Φ1. 600(0. 063)
MAX
4.700(0.185)
1.270(0. 050)
TYP
15.500(0.610)
0.360(0. 014)
0.760(0. 030)
12.500(0.492)
4.300(0.169)
4.400(0.173)
4.800(0.189)
2.420(0.095)
2.660(0.105)
Aug. 2011 Rev 1. 3
BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE NPN TRANSISTOR
APT27
Mechanical Dimensions (Continued)
TO-92 (Ammo Packing)
Unit: mm(inch)
4.700(0.185)
3. 430(0. 135)
MIN
1.270(0. 050)
Typ
2.500(0. 098)
4.000 (0.157 )
0. 000(0.000)
0. 380(0. 015)
Φ1.600(0. 063)
MAX
14.500(0.571)
12.500(0.492)
0. 320(0. 013)
0. 510(0. 020)
3.800(0.150)
3.300(0.130)
1. 100(0. 043)
1. 400(0. 055)
4.300(0.169)
4.400(0. 173)
4.800 (0.189 )
13.000(0. 512)
15.000 (0.591 )
0.380(0.015)
0.550(0.022 )
2.540(0. 100)
Typ
Aug. 2011 Rev 1. 3
BCD Semiconductor Manufacturing Limited
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