Comset BDV65 Nnp silicon darlingtons power transistor Datasheet

BDV65-A-B-C
NNP SILICON DARLINGTONS POWER TRANSISTORS
They are silicon epitaxial base transistors mounted in TO-3PN.
Theyare designed for audio output stages and general amplifier and switching applications.
complementary is BDV64-A- B-C
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
ICM
Collector Peak Current
IB
Base Current
26/09/2012
Value
BDV65
BDV65A
BDV65B
BDV65C
BDV65
BDV65A
BDV65B
BDV65C
BDV65
BDV65A
BDV65B
BDV65C
BDV65
BDV65A
BDV65B
BDV65C
BDV65
BDV65A
BDV65B
BDV65C
BDV65
BDV65A
BDV65B
BDV65C
COMSET SEMICONDUCTORS
60
80
100
120
60
80
100
120
5.0
Unit
V
V
V
12
A
15
0.5
A
1/4
BDV65-A-B-C
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Tmb = 25° C
Power Dissipation
PT
Tmb = 25° C
Junction Temperature
TJ
Storage Temperature
TS
Value
BDV65
BDV65A
BDV65B
BDV65C
BDV65
BDV65A
BDV65B
BDV65C
BDV65
BDV65A
BDV65B
BDV65C
BDV65
BDV65A
BDV65B
BDV65C
Unit
125
Watts
3.5
150
°C
-65 to +150
THERMAL CHARACTERISTICS
Symbol
Rthj-c
Rthj-a
Ratings
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
26/09/2012
Value
BDV65
BDV65A
BDV65B
BDV65C
BDV65
BDV65A
BDV65B
BDV65C
COMSET SEMICONDUCTORS
Unit
1
°C / W
35.7
2/4
BDV65-A-B-C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
ICEO
IEBO
ICBO
Ratings
Collector Cutoff
Current
Emitter Cutoff Current
Collector Cutoff
Current
Test Condition(s)
VCE= 30 V, IB= 0
VCE= 40 V, IB= 0
VCE= 50 V, IB= 0
VCE= 60 V, IB= 0
VBE= 5 V, IC= 0
IE= 0
Tj=25°C
IE= 0
Tj=150°C
VCB= 60 V
VCB= 80 V
VCB= 100 V
VCB= 120 V
VCB= 30 V
VCB= 40 V
VCB= 50 V
VCB= 60 V
VCEO
Collector-Emitter
I = 30 mA, IB = 0
Breakdown Voltage (*) C
hFE
DC Current Gain (*)
VCE= 4 V, IC= 5 A
VCE(SAT)
Collector-Emitter
saturation Voltage (*)
IC= 5 A, IB= 20 mA
VBE
Base-Emitter
Voltage(*)
VCE= 4 V, IC= 5 A
BDV65
BDV65A
BDV65B
BDV65C
BDV65
BDV65A
BDV65B
BDV65C
BDV65
BDV65A
BDV65B
BDV65C
BDV65
BDV65A
BDV65B
BDV65C
BDV65
BDV65A
BDV65B
BDV65C
BDV65
BDV65A
BDV65B
BDV65C
BDV65
BDV65A
BDV65B
BDV65C
BDV65
BDV65A
BDV65B
BDV65C
Min
Typ
Mx
Unit
-
-
2
mA
-
-
5
mA
-
-
0.4
mA
-
-
2
60
80
100
120
-
-
1000
-
-
-
-
-
2
V
-
-
2,5
V
V
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 1.5 %
26/09/2012
COMSET SEMICONDUCTORS
3/4
BDV65-A-B-C
MECHANICAL DATA CASE TO3PN Non Isolated Plastic Package
DIMENSIONS (mm)
Min.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
R
S
T
Pin 1 :
Pin 2 :
Pin 3 :
Package
Max.
15.20
1.90
4.60
3.10
1600
2.10
5.00
3.30
9.60
2.00
0.55
1.40
5.55
0.35
5.35
20.00
19.60
0.95
20.20
1.25
2.00
3.00
4.00
4.00
1.80
5.20
4.80
Base
Collector
Emitter
Collector
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
www.comsetsemi.com
26/09/2012
[email protected]
COMSET SEMICONDUCTORS
4/4
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