ON BC817-25LT1G General purpose transistor Datasheet

BC817-16LT1G,
BC817-25LT1G,
BC817-40LT1G
General Purpose
Transistors
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NPN Silicon
COLLECTOR
3
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
1
BASE
Compliant
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector − Emitter Voltage
VCEO
45
V
Collector − Base Voltage
VCBO
50
V
Emitter − Base Voltage
VEBO
5.0
V
IC
500
mAdc
2
Max
Unit
SOT−23
CASE 318
STYLE 6
225
1.8
mW
mW/°C
MARKING DIAGRAM
556
°C/W
300
2.4
mW
mW/°C
RqJA
417
°C/W
TJ, Tstg
−55 to +150
°C
Collector Current − Continuous
3
1
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board,
(Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
Alumina Substrate, (Note 2)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Symbol
PD
RqJA
PD
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
6x M G
G
1
6x
M
G
= Device Code
x = A, B, or C
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
October, 2010 − Rev. 11
1
Publication Order Number:
BC817−16LT1/D
BC817−16LT1G, BC817−25LT1G, BC817−40LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Collector −Emitter Breakdown Voltage
(IC = 10 mA)
V(BR)CEO
45
−
−
V
Collector −Emitter Breakdown Voltage
(VEB = 0, IC = 10 mA)
V(BR)CES
50
−
−
V
Emitter −Base Breakdown Voltage
(IE = 1.0 mA)
V(BR)EBO
5.0
−
−
V
Collector Cutoff Current
(VCB = 20 V)
(VCB = 20 V, TA = 150°C)
ICBO
−
−
−
−
100
5.0
nA
mA
100
160
250
40
−
−
−
−
250
400
600
−
Characteristic
OFF CHARACTERISTICS
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 1.0 V)
hFE
BC817−16
BC817−25
BC817−40
(IC = 500 mA, VCE = 1.0 V)
−
Collector −Emitter Saturation Voltage
(IC = 500 mA, IB = 50 mA)
VCE(sat)
−
−
0.7
V
Base −Emitter On Voltage
(IC = 500 mA, VCE = 1.0 V)
VBE(on)
−
−
1.2
V
fT
100
−
−
MHz
Cobo
−
10
−
pF
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
ORDERING INFORMATION
Device
Specific Marking
BC817−16LT1G
BC817−16LT3G
6A
BC817−25LT1G
BC817−25LT3G
6B
BC817−40LT1G
BC817−40LT3G
6C
Package
Shipping†
SOT−23
(Pb−Free)
3000/Tape & Reel
SOT−23
(Pb−Free)
10,000/Tape & Reel
SOT−23
(Pb−Free)
3000/Tape & Reel
SOT−23
(Pb−Free)
10,000/Tape & Reel
SOT−23
(Pb−Free)
3000/Tape & Reel
SOT−23
(Pb−Free)
10,000/Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
BC817−16LT1G, BC817−25LT1G, BC817−40LT1G
TYPICAL CHARACTERISTICS − BC817−16LT1
300
1
hFE, DC CURRENT GAIN
200
25°C
−55°C
100
0
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VCE = 1 V
150°C
0.001
0.01
0.01
0.1
1
Figure 1. DC Current Gain vs. Collector
Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
VBE(on), BASE−EMITTER VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
0.001
IC, COLLECTOR CURRENT (A)
−55°C
IC/IB = 10
0.9
25°C
0.8
150°C
0.7
0.6
0.5
0.4
0.3
0.2
−55°C
0.1
IC, COLLECTOR CURRENT (A)
1.1
1.0
150°C
25°C
0.01
1
0.1
IC/IB = 10
0.0001
0.001
0.01
0.1
1
1.2
VCE = 5 V
1.1
1.0
−55°C
0.9
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Voltage vs. Collector
Current
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3
1
BC817−16LT1G, BC817−25LT1G, BC817−40LT1G
θV, TEMPERATURE COEFFICIENTS (mV/°C)
1.0
TJ = 25°C
0.8
0.6
0.4
IC = 10 mA
100 mA
300 mA
500 mA
0.2
0
0.01
0.1
1
IB, BASE CURRENT (mA)
10
+1
qVC for VCE(sat)
0
-1
qVB for VBE
-2
100
1
Figure 5. Saturation Region
10
100
IC, COLLECTOR CURRENT (mA)
Figure 6. Temperature Coefficients
100
C, CAPACITANCE (pF)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
TYPICAL CHARACTERISTICS − BC817−16LT1
Cib
10
Cob
1
0.1
10
1
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitances
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4
100
1000
BC817−16LT1G, BC817−25LT1G, BC817−40LT1G
TYPICAL CHARACTERISTICS − BC817−25LT1
500
1
hFE, DC CURRENT GAIN
150°C
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VCE = 1 V
400
300
25°C
200
−55°C
100
0
0.001
0.01
0.001
0.01
0.1
1
Figure 8. DC Current Gain vs. Collector
Current
Figure 9. Collector Emitter Saturation Voltage
vs. Collector Current
VBE(on), BASE−EMITTER VOLTAGE (V)
−55°C
IC/IB = 10
25°C
0.8
150°C
0.7
0.6
0.5
0.4
0.3
0.0001
0.001
0.01
0.1
1
1.2
VCE = 5 V
1.1
1.0
0.9
−55°C
0.8
25°C
0.7
0.6
0.5
150°C
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 10. Base Emitter Saturation Voltage vs.
Collector Current
Figure 11. Base Emitter Voltage vs. Collector
Current
1000
fT, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
−55°C
IC, COLLECTOR CURRENT (A)
0.9
0.2
0.1
IC, COLLECTOR CURRENT (A)
1.1
1.0
150°C
25°C
0.01
1
0.1
IC/IB = 10
VCE = 1 V
TA = 25°C
100
10
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
Figure 12. Current Gain Bandwidth Product
vs. Collector Current
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5
1000
1
BC817−16LT1G, BC817−25LT1G, BC817−40LT1G
θV, TEMPERATURE COEFFICIENTS (mV/°C)
1.0
TJ = 25°C
0.8
0.6
0.4
IC = 10 mA
100 mA
300 mA
500 mA
0.2
0
0.01
0.1
1
IB, BASE CURRENT (mA)
10
+1
qVC for VCE(sat)
0
-1
qVB for VBE
-2
100
1
Figure 13. Saturation Region
10
100
IC, COLLECTOR CURRENT (mA)
Figure 14. Temperature Coefficients
100
C, CAPACITANCE (pF)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
TYPICAL CHARACTERISTICS − BC817−25LT1
Cib
10
Cob
1
0.1
10
1
VR, REVERSE VOLTAGE (VOLTS)
Figure 15. Capacitances
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6
100
1000
BC817−16LT1G, BC817−25LT1G, BC817−40LT1G
TYPICAL CHARACTERISTICS − BC817−40LT1
1
700
150°C
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
600
VCE = 1 V
500
25°C
400
300
−55°C
200
100
0
0.001
0.01
0.001
0.01
0.1
1
Figure 16. DC Current Gain vs. Collector
Current
Figure 17. Collector Emitter Saturation Voltage
vs. Collector Current
VBE(on), BASE−EMITTER VOLTAGE (V)
−55°C
IC/IB = 10
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.0001
0.001
0.01
0.1
1
1.2
VCE = 5 V
1.1
1.0
0.9
−55°C
0.8
25°C
0.7
0.6
0.5
150°C
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 18. Base Emitter Saturation Voltage vs.
Collector Current
Figure 19. Base Emitter Voltage vs. Collector
Current
1000
fT, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
0.01
IC, COLLECTOR CURRENT (A)
0.9
0.2
−55°C
IC, COLLECTOR CURRENT (A)
1.1
1.0
150°C
25°C
0.1
0.001
1
0.1
IC/IB = 10
VCE = 1 V
TA = 25°C
100
10
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
Figure 20. Current Gain Bandwidth Product
vs. Collector Current
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7
1000
1
BC817−16LT1G, BC817−25LT1G, BC817−40LT1G
θV, TEMPERATURE COEFFICIENTS (mV/°C)
1.0
TJ = 25°C
0.8
0.6
0.4
IC = 10 mA
100 mA
300 mA
500 mA
0.2
0
0.01
0.1
1
IB, BASE CURRENT (mA)
10
+1
qVC for VCE(sat)
0
-1
qVB for VBE
-2
100
1
Figure 21. Saturation Region
10
100
IC, COLLECTOR CURRENT (mA)
Figure 22. Temperature Coefficients
100
C, CAPACITANCE (pF)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
TYPICAL CHARACTERISTICS − BC817−40LT1
Cib
10
Cob
1
0.1
10
1
VR, REVERSE VOLTAGE (VOLTS)
Figure 23. Capacitances
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8
100
1000
BC817−16LT1G, BC817−25LT1G, BC817−40LT1G
TYPICAL CHARACTERISTICS − BC817−16LT1, BC817−25LT1, BC817−40LT1
1
1 ms
10 ms
100 ms
1s
Thermal Limit
IC (A)
0.1
0.01
Single Pulse Test @ TA = 25°C
0.001
0.01
0.1
1
VCE (Vdc)
10
Figure 24. Safe Operating Area
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9
100
BC817−16LT1G, BC817−25LT1G, BC817−40LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
D
SEE VIEW C
3
HE
E
1
2
e
b
DIM
A
A1
b
c
D
E
e
L
L1
HE
0.25
q
A
L
A1
L1
VIEW C
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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BC817−16LT1/D
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