DXT651 60V NPN LOW VCE(sat) TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > 60V Case: SOT89 IC = 3A high Continuous Current Case material: Molded Plastic. “Green” Molding Compound. Low saturation voltage VCE(sat) < 300mV @ 1A UL Flammability Rating 94V-0 Complementary PNP Type: DXT751 Moisture Sensitivity: Level 1 per J-STD-020 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 Weight: 0.052 grams (Approximate) C SOT89 E B C C B E Top View Device Symbol Top View Pinout Ordering Information (Note 4) Product DXT651-13 DXT651-13R Notes: Marking KN2 KN2 Reel size (inches) 13 13 Tape width (mm) 12 12 Quantity per reel 2,500 4,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green" and Lead-Free. 3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information YWW KN2 DXT651 Document Number: DS31184 Rev: 5 - 2 KN2 = Product Type Marking Code = Manufacturer’s Marking Code YWW = Date Code Marking Y = Last digit of year (ex: 7 = 2007) WW = Week code (01 – 53) 1 of 6 www.diodes.com February 2013 © Diodes Incorporated DXT651 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Pulse Collector Current Base Current Symbol VCBO VCEO VEBO IC ICM IB Value 80 60 5 3 6 500 Unit V V V A A mA Value 1 125 18.2 -55 to +150 Unit W °C/W °C/W °C Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient Air (Note 5) Thermal Resistance, Junction to Leads (Note 6) Operating and Storage Temperature Range Notes: Symbol PD RθJA RθJL TJ, TSTG 5. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 6. Thermal resistance from junction to solder-point (on the exposed collector pad). 120 25mm x 25mm 1oz Cu Tamb = 25°C 100 80 D=0.5 60 40 Single Pulse D=0.2 D=0.05 20 0 100µ D=0.1 1m 10m 100m 1 10 100 1k Pulse Width (s) Max Power Dissipation (W) Thermal Resistance (°C/W) Thermal Characteristics and Derating Information Single pulse 10 1 100µ Max Power Dissipation (W) Transient Thermal Impedance 1.0 25mm x 25mm 1oz Cu Tamb = 25°C 100 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation 25mm x 25mm 1oz Cu 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 140 160 Temperature (°C) Derating Curve DXT651 Document Number: DS31184 Rev: 5 - 2 2 of 6 www.diodes.com February 2013 © Diodes Incorporated DXT651 Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Symbol Min Typ Max Unit BVCBO BVCEO BVEBO 80 60 5 V V V Collector-Base Cutoff Current ICBO Emitter-Base Cutoff Current ON CHARACTERISTICS (Note 7) IEBO 0.1 10 0.1 Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage VBE(sat) VBE(on) 0.08 0.23 0.85 0.8 0.3 0.6 1.25 1 V V V V hFE 70 100 80 40 200 200 185 120 300 fT Cobo ton toff 140 200 35 230 30 MHz pF ns ns DC Current Gain AC CHARACTERISTICS Transition Frequency Output Capacitance Switching Times µA µA Test Conditions IC = 100A, IE = 0 IC = 10mA, IB = 0 IE = 100A, IC = 0 VCB = 60V, IE = 0 VCB = 60V, IE = 0, TA = +100°C VEB = 4V, IC = 0 IC = 1A, IB = 100mA IC = 3A, IB = 300mA IC = 1A, IB = 100mA VCE = 2V, IC = 1A VCE = 2V, IC = 50mA VCE = 2V, IC = 500mA VCE = 2V, IC = 1A VCE = 2V, IC = 2A VCE = 5V, IC = 100mA, f = 100MHz VCB = 10V, f = 1MHz VCC = 10V. IC = 500mA, IB1 = IB2 = 50mA 7. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%. Notes: 2.0 350 VCE = 2V 1.8 300 TA = 150°C 250 TA = 85°C 1.6 hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (A) IB = 10mA IB = 8mA 1.4 1.2 IB = 6mA 1.0 0.8 IB = 4mA 0.6 0.4 IB = 2mA 200 TA = 25°C 150 100 TA = -55°C 50 0.2 0.0 0 1 2 3 4 5 VCE, COLLECTOR EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs.Collector-Emitter Voltage DXT651 Document Number: DS31184 Rev: 5 - 2 3 of 6 www.diodes.com 0 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Fig. 3 Typical DC Current Gain vs. Collector Current 10 February 2013 © Diodes Incorporated DXT651 VCE(SAT), COLLECTOR EMITTER SATURATION VOLTAGE (V) 0.3 VBE(ON), BASE EMITTER TURN-ON VOLTAGE (V) 0.35 IC/IB = 10 0.25 0.2 0.15 TA = 150°C 0.1 T A = 85°C TA = 25°C 0.05 TA = -55°C 0 0.0001 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1.0 IC /IB = 10 0.8 TA = -55°C 0.6 TA = 25°C 0.4 TA = 85°C 0.2 VCE = 2V 1.0 0.8 TA = -55°C 0.6 TA = 25°C 0.4 TA = 85°C TA = 150°C 0.2 0.0 0.0001 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 5 Typical Base-Emitter Turn-On Voltage vs. Collector Current 60 Cobo, OUTPUT CAPACITANCE (pF) VBE(SAT), BASE EMITTER SATURATION VOLTAGE (V) 1.2 1.2 TA = 150°C 0 0.0001 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current 50 f = 1MHz 40 30 20 10 0 0 5 10 15 20 25 30 35 40 VR, REVERSE VOLTAGE (V) Fig. 7 Typical Output Capacitance Characteristics fT, GAIN-BANDWIDTH PRODUCT (MHz) 250 200 150 100 VCE = 5V f = 100MHz 50 0 0 20 40 60 80 100 IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current DXT651 Document Number: DS31184 Rev: 5 - 2 4 of 6 www.diodes.com February 2013 © Diodes Incorporated DXT651 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. D1 0 .20 R0 C 1 SOT89 Dim Min Max A 1.40 1.60 B 0.44 0.62 B1 0.35 0.54 C 0.35 0.44 D 4.40 4.60 D1 1.62 1.83 E 2.29 2.60 e 1.50 Typ H 3.94 4.25 H1 2.63 2.93 L 0.89 1.20 All Dimensions in mm H H E B1 B L e 8° (4X) A D Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X1 X2 (2x) Y1 Y3 Y4 Y2 Y C Dimensions Value (in mm) X 0.900 X1 1.733 X2 0.416 Y 1.300 Y1 4.600 Y2 1.475 Y3 0.950 Y4 1.125 C 1.500 X (3x) DXT651 Document Number: DS31184 Rev: 5 - 2 5 of 6 www.diodes.com February 2013 © Diodes Incorporated DXT651 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2013, Diodes Incorporated www.diodes.com DXT651 Document Number: DS31184 Rev: 5 - 2 6 of 6 www.diodes.com February 2013 © Diodes Incorporated