Seme LAB D1004 Metal gate rf silicon fet Datasheet

TetraFET
D1004UK
METAL GATE RF SILICON FET
MECHANICAL DATA
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
80W – 28V – 175MHz
SINGLE ENDED
C
D
(2 pls)
E
1
B
2
3
A
G
5
4
H
I
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
F
M
J
K
N
• SUITABLE FOR BROAD BAND APPLICATIONS
DT
PIN 1
SOURCE (COMMON) PIN 2
GATE
• LOW Crss
PIN 3
SOURCE (COMMON) PIN 4
SOURCE (COMMON)
• SIMPLE BIAS CIRCUITS
PIN 5
DRAIN
• LOW NOISE
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
mm
6.35 DIA
3.17 DIA
18.41
5.46
5.21
7.62
21.59
3.94
12.70
0.13
24.76
2.59
4.06
Tol.
0.13
0.13
0.25
0.13
0.13
MAX
0.38
0.13
0.13
0.03
0.13
0.13
0.25
Inches
0.250 DIA
0.125 DIA
0.725
0.215
0.205
0.300
0.850
0.155
0.500
0.005
0.975
0.102
0.160
Tol.
0.005
0.005
0.010
0.005
0.005
MAX
0.015
0.005
0.005
0.001
0.005
0.005
0.010
• HIGH GAIN – 16 dB MINIMUM
APPLICATIONS
• HF/VHF COMMUNICATIONS
from 1 MHz to 175 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD
BVDSS
BVGSS
ID(sat)
Tstg
Tj
Semelab plc.
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website: http://www.semelab.co.uk
E-mail: [email protected]
175W
70V
±20V
20A
–65 to 150°C
200°C
Prelim. 6/99
D1004UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
BVDSS
IDSS
IGSS
Drain–Source
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
VGS(th) Gate Threshold Voltage *
Typ.
Max. Unit
V
VGS = 0
ID = 100mA
VDS = 28V
VGS = 0
4
mA
VGS = 20V
VDS = 0
1
µA
ID = 10mA
VDS = VGS
7
V
ID = 4A
gfs
Forward Transconductance *
VDS = 10V
GPS
Common Source Power Gain
PO = 80W
η
Drain Efficiency
VDS = 28V
VSWR Load Mismatch Tolerance
f = 175MHz
IDQ = 0.4A
70
1
3.2
S
16
dB
50
%
20:1
—
Ciss
Input Capacitance
VDS = 28V
VGS = –5V f = 1MHz
240
pF
Coss
Output Capacitance
VDS = 28V
VGS = 0
f = 1MHz
120
pF
Crss
Reverse Transfer Capacitance
VDS = 28V
VGS = 0
f = 1MHz
10
pF
* Pulse Test:
Pulse Duration = 300 µs , Duty Cycle ≤ 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHj–case
Semelab plc.
Thermal Resistance Junction – Case
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website: http://www.semelab.co.uk
E-mail: [email protected]
Max. 1.0°C / W
Prelim. 6/99
D1004UK
150
80
150
22
125
70
125
20
100
60
100
18
75
16
P out
Efficiency
75
50
W
%
VDS = 28V
50
IDQ = 0.4A
f = 175MHz
25
P out
Gain
dB
W
40
50
30
25
14
VDS = 28V
IDQ = 0.4A
12
f = 175MHz
0
0
1
2
3
4
5
P in W
6
7
8
20
0
10
0
1
2
3
4
5
P in W
Pout
Drain Efficiency
Figure 1 – Power Output and Efficiency
vs. Power Input.
6
7
8
Pout
Gain
Figure 2 – Power Output & Gain
vs. Power Input.
-20
D1004UK
-25
IMD
OPTIMUM SOURCE AND LOAD IMPEDANCE
-30
dBc
VDS = 28V
-35
Frequency
MHz
175MHz
f1 = 175.0MHz
f2 = 175.1MHz
-40
IDQ = 0.4A
-45
10
20
30
40
50
P out W PEP
60
70
80
ZS
ZL
Ω
Ω
2.2 + j1.9 3.2 - j0.5
90
IMD3
Figure 3 – IMD vs. Output Power.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website: http://www.semelab.co.uk
E-mail: [email protected]
Prelim. 6/99
D1004UK
12Ω
10kΩ
Gate-Bias
+28V
L4
100nF
22µF
10nF
10kΩ
D1004K
8 x5 mm
contact pad
L3
5.1nF
5.1nF
1-70pF
L1
T1
L2
T2
1-70pF
1-70pF
T3
1-70pF
8 x5 mm
contact pad
D1004UK 175MHz TEST FIXTURE
Substrate 1.6mm PTFE/ glass, Er= 2.5
All microstrip lines W=4.4mm
T1
T2
T3
7.5mm
6mm
8mm
Semelab plc.
L1
L2
L3
L4
Hairpin loop 16swg 13mm dia
Hairpin loop 16swg 11mm dia
10 turns 18swg enamelled copper wire, 4mm i.d.
12 turns 18swg enamelled copper wire on 22.7mm
o.d. ferrite core
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website: http://www.semelab.co.uk
E-mail: [email protected]
Prelim. 6/99
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