Fairchild FDMS0308CS Fdms0308cs n-channel powertrenchâ® syncfettm 30 v, 42 a, 3 m Datasheet

FDMS0308CS
N-Channel PowerTrench® SyncFETTM
30 V, 42 A, 3 m:
Features
General Description
„ Max rDS(on) = 3.0 m: at VGS = 10 V, ID = 21 A
The FDMS0308CS has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance. This
device has the added benefit of an efficient monolithic Schottky
body diode.
„ Max rDS(on) = 3.5 m: at VGS = 4.5 V, ID = 17 A
„ Advanced Package and Silicon combination for low rDS(on)
and high efficiency
„ SyncFET Schottky Body Diode
„ MSL1 robust package design
Applications
„ 100% UIL tested
„ Synchronous Rectifier for DC/DC Converters
„ RoHS Compliant
„ Notebook Vcore/ GPU low side switch
„ Networking Point of Load low side switch
„ Desktop
Bottom
Top
Pin 1
S
D
D
D
S
S
G
D
5
4 G
D
6
3
D
7
2 S
D
8
1
S
S
D
Power 56
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
(Note 4)
Drain Current -Continuous (Package limited)
ID
TC = 25 °C
-Continuous (Silicon limited)
TC = 25 °C
-Continuous
TA = 25 °C
PD
TJ, TSTG
Units
V
±20
V
42
113
(Note 1a)
-Pulsed
22
A
150
Single Pulse Avalanche Energy
EAS
Ratings
30
(Note 3)
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
98
65
(Note 1a)
Operating and Storage Junction Temperature Range
2.5
-55 to +150
mJ
W
°C
Thermal Characteristics
RTJC
Thermal Resistance, Junction to Case
RTJA
Thermal Resistance, Junction to Ambient
1.9
(Note 1a)
50
°C/W
Package Marking and Ordering Information
Device Marking
FDMS0308CS
Device
FDMS0308CS
©2010 Fairchild Semiconductor Corporation
FDMS0308CS Rev.C
Package
Power 56
1
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDMS0308CS N-Channel PowerTrench® SyncFETTM
August 2010
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 1 mA, VGS = 0 V
'BVDSS
'TJ
Breakdown Voltage Temperature
Coefficient
30
V
ID = 10 mA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
500
PA
IGSS
Gate to Source Leakage Current, Forward
VGS = 20 V, VDS = 0 V
100
nA
3.0
V
14
mV/°C
On Characteristics (Note 2)
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 1 mA
'VGS(th)
'TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 10 mA, referenced to 25 °C
-5
VGS = 10 V, ID = 21 A
1.9
rDS(on)
StaticDrain to Source On Resistance
VGS = 4.5 V, ID = 17 A
2.5
3.5
VGS = 10 V, ID = 21 A, TJ = 125 °C
2.5
3.8
VDS = 5 V, ID = 21 A
300
gFS
Forward Transconductance
1.2
1.6
mV/°C
3.0
m:
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
3175
4225
pF
1175
1565
pF
110
165
pF
1.3
2.6
:
14
25
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
VDD = 15 V, ID = 21 A,
VGS = 10 V, RGEN = 6 :
6
12
ns
35
56
ns
5
10
ns
Total Gate Charge
VGS = 0 V to 10 V
47
66
nC
Qg
Total Gate Charge
31
nC
Gate to Source Gate Charge
VGS = 0 V to 4.5 V VDD = 15 V,
ID = 21 A
22
Qgs
8.5
nC
Qgd
Gate to Drain “Miller” Charge
4.9
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 2 A
(Note 2)
0.43
0.7
VGS = 0 V, IS = 21 A
(Note 2)
0.75
1.2
IF = 21 A, di/dt = 300 A/ Ps
V
35
56
ns
41
67
nC
Notes:
1. RTJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by
the user's board design.
a. 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%.
3. EAS of 98 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 14 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 21 A.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
FDMS0308CS Rev.C
2
www.fairchildsemi.com
FDMS0308CS N-Channel PowerTrench® SyncFETTM
Electrical Characteristics TA = 25 °C unless otherwise noted
150
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
3.5
VGS = 3.5 V
120
ID, DRAIN CURRENT (A)
VGS = 10 V
VGS = 4.5 V
90
VGS = 4 V
VGS = 3 V
60
30
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
0
0.0
0.5
1.0
1.5
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
3.0
VGS = 3 V
2.5
VGS = 3.5 V
2.0
VGS = 4 V
1.5
VGS = 4.5 V
1.0
VGS = 10 V
0.5
2.0
0
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
120
150
10
ID = 21 A
VGS = 10 V
1.5
rDS(on), DRAIN TO
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-75
-50
SOURCE ON-RESISTANCE (m:)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
90
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
IS, REVERSE DRAIN CURRENT (A)
VDS = 5 V
90
TJ = 125 oC
60
25 oC
30
TJ = -55 oC
2.0
2.5
3.0
3.5
4
TJ = 125 oC
2
TJ = 25 oC
4
6
8
10
Figure 4. On-Resistance vs Gate to
Source Voltage
120
1.5
6
VGS, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5% MAX
0
1.0
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
8
2
150
TJ =
ID = 21 A
0
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
ID, DRAIN CURRENT (A)
60
ID, DRAIN CURRENT (A)
200
100
VGS = 0 V
10
TJ = 125 oC
1
TJ = 25 oC
0.1
0.01
TJ = -55 oC
0.001
0.0
4.0
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
FDMS0308CS Rev.C
3
1.2
www.fairchildsemi.com
FDMS0308CS N-Channel PowerTrench® SyncFETTM
Typical Characteristics TJ = 25 °C unless otherwise noted
5000
Ciss
ID = 21 A
8
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
VDD = 20 V
VDD = 10 V
6
VDD = 15 V
4
Coss
1000
Crss
2
100 f = 1 MHz
VGS = 0 V
0
0
10
20
30
40
60
0.1
50
Figure 7. Gate Charge Characteristics
TJ = 25 oC
10
TJ = 100 oC
TJ = 125 oC
VGS = 10 V
90
VGS = 4.5 V
60
30
o
RTJC = 1.9 C/W
Limited by Package
1
0.01
0.1
1
10
0
25
100 300
P(PK), PEAK TRANSIENT POWER (W)
10 ms
0.1
100 ms
1s
SINGLE PULSE
TJ = MAX RATED
10 s
RTJA = 125 oC/W
DC
TA = 25 oC
0.01
0.01
0.1
1
10
100 200
150
VGS = 10 V
1000
100
10
SINGLE PULSE
RTJA = 125 oC/W
1 TA = 25 oC
0.5 -4
-3
-2
10
10
10
-1
10
1
100
10
1000
t, PULSE WIDTH (sec)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 12. Single Pulse Maximum
Power Dissipation
Figure 11. Forward Bias Safe
Operating Area
FDMS0308CS Rev.C
125
10000
1 ms
THIS AREA IS
LIMITED BY rDS(on)
100
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
100 Ps
10
75
TC, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive
Switching Capability
200
100
50
o
tAV, TIME IN AVALANCHE (ms)
1
30
120
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
10
Figure 8. Capacitance vs Drain
to Source Voltage
40
ID, DRAIN CURRENT (A)
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
4
www.fairchildsemi.com
FDMS0308CS N-Channel PowerTrench® SyncFETTM
Typical Characteristics TJ = 25 °C unless otherwise noted
NORMALIZED THERMAL
IMPEDANCE, ZTJA
2
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.01
t1
t2
0.001
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZTJA x RTJA + TA
SINGLE PULSE
o
RTJA = 125 C/W
0.0001
-4
10
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
FDMS0308CS Rev.C
5
www.fairchildsemi.com
FDMS0308CS N-Channel PowerTrench® SyncFETTM
Typical Characteristics TJ = 25 °C unless otherwise noted
SyncFET Schottky body diode
Characteristics
Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power
in the device.
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MoSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverses recovery
characteristic of the FDMS0308CS.
-2
IDSS, REVERSE LEAKAGE CURRENT (A)
25
CURRENT (A)
20
15
di/dt = 300 A/Ps
10
5
0
-5
0
30
60
90
120
150
TJ = 125 oC
TJ = 100 oC
-3
10
-4
10
TJ = 25 oC
-5
10
-6
10
0
5
10
15
20
25
30
VDS, REVERSE VOLTAGE (V)
TIME (ns)
Figure 14. FDMS0308CS SyncFET body
diode reverse recovery characteristic
FDMS0308CS Rev.C
10
Figure 15. SyncFET body diode reverses
leakage versus drain-source voltage
6
www.fairchildsemi.com
FDMS0308CS N-Channel PowerTrench® SyncFETTM
Typical Characteristics (continued)
FDMS0308CS N-Channel PowerTrench® SyncFETTM
Dimensional Outline and Pad Layout
FDMS0308CS Rev.C
7
www.fairchildsemi.com
tm
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I48
FDMS0308CS Rev.C
8
www.fairchildsemi.com
FDMS0308CS N-Channel PowerTrench® SyncFETTM
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
Power-SPM™
AccuPower™
F-PFS™
®*
PowerTrench®
Auto-SPM™
FRFET®
SM
Build it Now™
Global Power Resource
PowerXS™
The Power Franchise®
®
CorePLUS™
Programmable Active Droop™
Green FPS™
CorePOWER™
QFET®
Green FPS™ e-Series™
CROSSVOLT™
QS™
Gmax™
TinyBoost™
CTL™
Quiet Series™
GTO™
TinyBuck™
Current Transfer Logic™
RapidConfigure™
IntelliMAX™
TinyCalc™
DEUXPEED®
ISOPLANAR™
™
TinyLogic®
Dual Cool™
MegaBuck™
TINYOPTO™
®
Saving our world, 1mW/W/kW at a time™
EcoSPARK
MICROCOUPLER™
TinyPower™
EfficentMax™
SignalWise™
MicroFET™
TinyPWM™
SmartMax™
ESBC™
MicroPak™
TinyWire™
SMART START™
MicroPak2™
®
TriFault Detect™
SPM®
MillerDrive™
TRUECURRENT™*
®
STEALTH™
MotionMax™
Fairchild
PSerDes™
®
SuperFET™
Motion-SPM™
Fairchild Semiconductor
SuperSOT™-3
OptiHiT™
FACT Quiet Series™
SuperSOT™-6
OPTOLOGIC®
FACT®
®
UHC®
®
OPTOPLANAR
SuperSOT™-8
FAST
®
Ultra FRFET™
SupreMOS™
FastvCore™
UniFET™
SyncFET™
FETBench™
VCX™
Sync-Lock™
FlashWriter® *
PDP SPM™
VisualMax™
FPS™
XS™
Similar pages