AD AD8001 800 mhz, 50 mw current feedback amplifier Datasheet

a
800 MHz, 50 mW
Current Feedback Amplifier
AD8001
FEATURES
Excellent Video Specifications (RL = 150 ⍀, G = +2)
Gain Flatness 0.1 dB to 100 MHz
0.01% Differential Gain Error
0.025ⴗ Differential Phase Error
Low Power
5.5 mA Max Power Supply Current (55 mW)
High Speed and Fast Settling
880 MHz, –3 dB Bandwidth (G = +1)
440 MHz, –3 dB Bandwidth (G = +2)
1200 V/␮s Slew Rate
10 ns Settling Time to 0.1%
Low Distortion
–65 dBc THD, f C = 5 MHz
33 dBm 3rd Order Intercept, F 1 = 10 MHz
–66 dB SFDR, f = 5 MHz
High Output Drive
70 mA Output Current
Drives Up to Four Back-Terminated Loads (75 ⍀ Each)
While Maintaining Good Differential Gain/Phase
Performance (0.05%/0.25ⴗ)
APPLICATIONS
A-to-D Driver
Video Line Driver
Professional Cameras
Video Switchers
Special Effects
RF Receivers
FUNCTIONAL BLOCK DIAGRAMS
8-Lead DIP (N-8, Q-8)
and SOIC (SO-8)
NC 1
8
–IN
2
7
V+
+IN 3
6
OUT
5
NC
V– 4
5-Lead
SOT-23-5
AD8001
NC
VOUT 1
AD8001
5
+VS
4
–IN
–VS 2
+IN 3
NC = NO CONNECT
transimpedance linearization circuitry. This allows it to drive
video loads with excellent differential gain and phase performance on only 50 mW of power. The AD8001 is a current
feedback amplifier and features gain flatness of 0.1 dB to 100 MHz
while offering differential gain and phase error of 0.01% and
0.025°. This makes the AD8001 ideal for professional video
electronics such as cameras and video switchers. Additionally,
the AD8001’s low distortion and fast settling make it ideal for
buffer high-speed A-to-D converters.
The AD8001 offers low power of 5.5 mA max (VS = ± 5 V) and
can run on a single +12 V power supply, while being capable of
delivering over 70 mA of load current. These features make this
amplifier ideal for portable and battery-powered applications
where size and power are critical.
PRODUCT DESCRIPTION
The AD8001 is a low power, high-speed amplifier designed
to operate on ± 5 V supplies. The AD8001 features unique
The outstanding bandwidth of 800 MHz along with 1200 V/µs
of slew rate make the AD8001 useful in many general purpose
high-speed applications where dual power supplies of up to ± 6 V
and single supplies from 6 V to 12 V are needed. The AD8001 is
available in the industrial temperature range of –40°C to +85°C.
9
VS = 65V
RFB = 820V
6
GAIN – dB
3
G = +2
RL = 100V
0
–3
VS = 65V
RFB = 1kV
–6
–9
–12
10M
100M
FREQUENCY – Hz
1G
Figure 2. Transient Response of AD8001; 2 V Step, G = +2
Figure 1. Frequency Response of AD8001
REV. C
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
World Wide Web Site: http://www.analog.com
Fax: 781/326-8703
© Analog Devices, Inc., 1999
AD8001–SPECIFICATIONS (@ T = + 25ⴗC, V = ⴞ5 V, R = 100 ⍀, unless otherwise noted)
A
S
L
Model
DYNAMIC PERFORMANCE
–3 dB Small Signal Bandwidth,
N Package
R Package
RT Package
Bandwidth for 0.1 dB Flatness
N Package
R Package
RT Package
Slew Rate
Settling Time to 0.1%
Rise and Fall Time
NOISE/HARMONIC PERFORMANCE
Total Harmonic Distortion
Input Voltage Noise
Input Current Noise
Differential Gain Error
Differential Phase Error
Third Order Intercept
1 dB Gain Compression
SFDR
AD8001A
Typ
Max
Conditions
Min
G = +2, < 0.1 dB Peaking, RF = 750 Ω
G = +1, < 1 dB Peaking, R F = 1 kΩ
G = +2, < 0.1 dB Peaking, RF = 681 Ω
G = +1, < 0.1 dB Peaking, RF = 845 Ω
G = +2, < 0.1 dB Peaking, RF = 768 Ω
G = +1, < 0.1 dB Peaking, R F = 1 kΩ
350
650
350
575
300
575
440
880
440
715
380
795
MHz
MHz
MHz
MHz
MHz
MHz
G = +2, R F = 750 Ω
G = +2, R F = 681 Ω
G = +2, R F = 768 Ω
G = +2, VO = 2 V Step
G = –1, V O = 2 V Step
G = –1, V O = 2 V Step
G = +2, VO = 2 V Step, RF = 649 Ω
85
100
120
800
960
110
125
145
1000
1200
10
1.4
MHz
MHz
MHz
V/µs
V/µs
ns
ns
–65
dBc
2.0
2.0
18
0.01
0.025
33
14
–66
nV/√Hz
pA/√Hz
pA/√Hz
%
Degree
dBm
dBm
dB
fC = 5 MHz, VO = 2 V p-p
G = +2, R L = 100 Ω
f = 10 kHz
f = 10 kHz, +In
–In
NTSC, G = +2, R L = 150 Ω
NTSC, G = +2, R L = 150 Ω
f = 10 MHz
f = 10 MHz
f = 5 MHz
DC PERFORMANCE
Input Offset Voltage
2.0
2.0
10
5.0
TMIN –TMAX
Offset Drift
–Input Bias Current
TMIN –TMAX
+Input Bias Current
Open Loop Transresistance
INPUT CHARACTERISTICS
Input Resistance
Input Capacitance
Input Common-Mode Voltage Range
Common-Mode Rejection Ratio
Offset Voltage
–Input Current
+Input Current
OUTPUT CHARACTERISTICS
Output Voltage Swing
Output Current
Short Circuit Current
POWER SUPPLY
Operating Range
Quiescent Current
Power Supply Rejection Ratio
–Input Current
+Input Current
3.0
TMIN –TMAX
VO = ± 2.5 V
TMIN –TMAX
250
175
+Input
–Input
+Input
0.025
0.04
5.5
9.0
25
35
6.0
10
900
10
50
1.5
3.2
VCM = ± 2.5 V
VCM = ± 2.5 V, T MIN –TMAX
VCM = ± 2.5 V, T MIN –TMAX
50
R L = 150 Ω
R L = 37.5 Ω
2.7
50
85
54
0.3
0.2
60
50
5.0
75
56
0.5
0.1
mV
mV
µV/°C
±µA
±µA
±µA
±µA
kΩ
kΩ
MΩ
Ω
pF
±V
1.0
0.7
dB
µA/V
µA/V
±V
mA
mA
3.1
70
110
± 3.0
TMIN –TMAX
+VS = +4 V to +6 V, –VS = –5 V
–VS = – 4 V to –6 V, +VS = +5 V
TMIN –TMAX
TMIN –TMAX
Units
± 6.0
5.5
2.5
0.5
V
mA
dB
dB
µA/V
µA/V
Specifications subject to change without notice.
–2–
REV. C
AD8001
ABSOLUTE MAXIMUM RATINGS 1
MAXIMUM POWER DISSIPATION
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V
Internal Power Dissipation2
Plastic DIP Package (N) . . . . . . . . . . . . . . . . . . . . . . . 1.3 W
Small Outline Package (R) . . . . . . . . . . . . . . . . . . . . . . 0.9 W
SOT-23-5 Package (RT) . . . . . . . . . . . . . . . . . . . . . . . 0.5 W
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . . ± VS
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . ± 1.2 V
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range N, R . . . . . . . . . –65°C to +125°C
Operating Temperature Range (A Grade) . . . –40°C to +85°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . +300°C
The maximum power that can be safely dissipated by the
AD8001 is limited by the associated rise in junction temperature. The maximum safe junction temperature for plastic
encapsulated devices is determined by the glass transition temperature of the plastic, approximately +150°C. Exceeding this
limit temporarily may cause a shift in parametric performance
due to a change in the stresses exerted on the die by the package.
Exceeding a junction temperature of +175°C for an extended
period can result in device failure.
2.0
MAXIMUM POWER DISSIPATION – Watts
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2
Specification is for device in free air:
8-Lead Plastic DIP Package: θJA = 90°C/W
8-Lead SOIC Package: θJA = 155°C/W
8-Lead Cerdip Package: θJA = 110°C/W
5-Lead SOT-23-5 Package: θ JA = 260°C/W
While the AD8001 is internally short circuit protected, this
may not be sufficient to guarantee that the maximum junction
temperature (+150°C) is not exceeded under all conditions. To
ensure proper operation, it is necessary to observe the maximum
power derating curves.
TJ = +1508C
1.5
8-LEAD
SOIC PACKAGE
8-LEAD
PLASTIC DIP PACKAGE
1.0
0.5
5-LEAD
SOT-23-5 PACKAGE
0
–50 –40 –30 –20 –10 0 10 20 30 40 50 60
AMBIENT TEMPERATURE – 8C
70
80
90
Figure 3. Plot of Maximum Power Dissipation vs.
Temperature
ORDERING GUIDE
Model
AD8001AN
AD8001AQ
AD8001AR
AD8001AR-REEL
AD8001AR-REEL7
AD8001ART-REEL
AD8001ART-REEL7
AD8001ACHIPS
5962-9459301MPA1
AD8001R-EB+22
Temperature
Range
Package
Description
Package
Option
Brand
Code
–40°C to +85°C
–55°C to +125°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–55°C to +125°C
8-Lead Plastic DIP
8-Lead Cerdip
8-Lead SOIC
13" Tape and REEL
7" Tape and REEL
13" Tape and REEL
7" Tape and REEL
Die Form
8-Lead Cerdip
SOIC Evaluation Board, G = +2
N-8
Q-8
SO-8
SO-8
SO-8
RT-5
RT-5
HEA
HEA
Q-8
NOTES
1
Standard Military Drawing Device.
2
Refer to Evaluation Board section.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8001 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
REV. C
–3–
WARNING!
ESD SENSITIVE DEVICE
AD8001
806V
0.001mF
+VS
VOUT TO
TEKTRONIX
CSA 404 COMM.
SIGNAL
ANALYZER
0.1mF
806V
AD8001
0.1mF
VIN
HP8133A
PULSE
GENERATOR
50V
RL = 100V
0.001mF
TR/TF = 50ps
–VS
400mV
5ns
Figure 7. 2 V Step Response, G = +2
Figure 4. Test Circuit , Gain = +2
909V
0.001mF
+VS
0.1mF
VOUT TO
TEKTRONIX
CSA 404 COMM.
SIGNAL
ANALYZER
AD8001
0.1mF
VIN
LeCROY 9210
PULSE
GENERATOR
TR/TF = 350ps
Figure 5. 1 V Step Response, G = +2
0.5V
50V
RL = 100V
0.001mF
–VS
Figure 8. Test Circuit, Gain = +1
5ns
Figure 6. 2 V Step Response, G = +1
Figure 9. 100 mV Step Response, G = +1
–4–
REV. C
AD8001
1000
9
VS = 65V
RFB = 820V
GAIN – dB
3
G = +2
RL = 100V
0
VS = 65V
RFB = 1kV
–3
VS = 65V
RL = 100V
G = +2
800
–3dB BANDWIDTH – MHz
6
–6
600
N
PACKAGE
400
R
PACKAGE
200
–9
–12
10M
100M
FREQUENCY – Hz
0
500
1G
Figure 10. Frequency Response, G = +2
0.1
0
HARMONIC DISTORTION – dBc
OUTPUT – dB
–0.5
900
1000
65V SUPPLIES
RF = 750V
–0.3
–0.4
800
–50
RF = 698V
–0.2
700
Figure 13. –3 dB Bandwidth vs. R F
RF =
649V
–0.1
600
VALUE OF FEEDBACK RESISTOR (RF) – V
G = +2
RL = 100V
VIN = 50mV
–0.6
–0.7
–60
VOUT = 2V p-p
RL = 100V
G = +2
–70
2ND HARMONIC
–80
3RD HARMONIC
–90
–0.8
–0.9
1M
10M
FREQUENCY – Hz
–100
10k
100M
DIFF PHASE – Degrees
–50
65V SUPPLIES
VOUT = 2V p-p
RL = 1kV
G = +2
–70
2ND HARMONIC
10M
100M
0.08
0.06
G = +2
RF = 806V
2 BACK TERMINATED
LOADS (75V)
0.04
0.02
0.00
1 BACK TERMINATED
LOAD (150V)
–80
0.02
–90
DIFF GAIN – %
HARMONIC DISTORTION – dBc
1M
FREQUENCY – Hz
Figure 14. Distortion vs. Frequency, RL = 100 Ω
Figure 11. 0.1 dB Flatness, R Package (for N Package Add
50 Ω to RF)
–60
100k
3RD HARMONIC
–100
–110
10k
0.00
–0.01
–0.02
100k
1M
FREQUENCY – Hz
10M
0
100M
Figure 12. Distortion vs. Frequency, RL = 1 k Ω
REV. C
1 AND 2 BACK TERMINATED
LOADS (150V AND 75V)
0.01
IRE
100
Figure 15. Differential Gain and Differential Phase
–5–
AD8001
5
1000
0
N PACKAGE
900
GAIN – dB
–10
–3dB BANDWIDTH – MHz
–5
VIN = –26dBm
RF = 909V
–15
–20
–25
800
R PACKAGE
700
VIN = 50mV
RL = 100V
G = +1
600
–30
–35
100M
1G
500
600
3G
FREQUENCY – Hz
Figure 16. Frequency Response, G = +1
–40
0
RF = 649V
–50
–1
DISTORTION – dBc
RF = 953V
–2
OUTPUT – dB
1100
Figure 19. –3 dB Bandwidth vs. RF, G = +1
+1
–3
–4
–5
900
700
800
1000
VALUE OF FEEDBACK RESISTOR (RF) – V
G = +1
RL = 100V
VIN = 50mV
–6
RL = 100V
G = +1
VOUT = 2V p-p
–60
2ND HARMONIC
–70
–80
3RD HARMONIC
–7
–90
–8
–9
2M
10M
100M
FREQUENCY – Hz
–100
10k
1G
100M
0
G = +1
RL = 1kV
VOUT = 2V p-p
–3
–60
–6
OUTPUT – dBV
DISTORTION – dBc
10M
3
–40
–70
2ND HARMONIC
–80
3RD HARMONIC
–90
–9
–12
–15
–18
–21
–100
–110
10k
1M
FREQUENCY – Hz
Figure 20. Distortion vs. Frequency, RL = 100 Ω
Figure 17. Flatness, R Package, G = +1 (for N Package Add
100 Ω to RF)
–50
100k
RL = 100V
G = +1
–24
100k
1M
FREQUENCY – Hz
10M
–27
1M
100M
Figure 18. Distortion vs. Frequency, RL = 1 kΩ
10M
FREQUENCY – Hz
100M
Figure 21. Large Signal Frequency Response, G = +1
–6–
REV. C
AD8001
45
2.2
40
2.0
30
INPUT OFFSET VOLTAGE – mV
G = +100
35
RF = 1000V
25
GAIN – dB
20
G = +10
15
RF = 470V
10
5
0
–5
RL = 100V
–10
–15
1.6
DEVICE #2
1.4
1.2
1.0
1M
10M
100M
FREQUENCY – Hz
0.4
–60
1G
3.35
5.8
3.25
5.6
3.15
+VOUT
RL = 150V
VS = 65V
3.05
| –VOUT |
2.95
2.85
+VOUT
RL = 50V
VS = 65V
2.75
–40
–20
0
20
40
60
JUNCTION TEMPERATURE – 8C
80
5.2
VS = 65V
5.0
4.8
5
125
4
120
SHORT CIRCUIT CURRENT – mA
INPUT BIAS CURRENT – mA
100
–40
–20
0
20
40
60
80
100
JUNCTION TEMPERATURE – 8C
120
140
Figure 26. Supply Current vs. Temperature
3
–IN
2
1
0
–1
+IN
–2
SOURCE ISC
115
110
| SINK ISC |
105
100
95
90
–3
–40
–20
0
20
40
60
80
100
120
85
–60
140
JUNCTION TEMPERATURE – 8C
–40
–20
0
20
40
60
JUNCTION TEMPERATURE – 8C
80
100
Figure 27. Short Circuit Current vs. Temperature
Figure 24. Input Bias Current vs. Temperature
REV. C
80
5.4
4.4
–60
100
Figure 23. Output Swing vs. Temperature
–4
–60
–20
0
20
40
60
JUNCTION TEMPERATURE – 8C
4.6
| –VOUT |
2.65
–40
Figure 25. Input Offset vs. Temperature
SUPPLY CURRENT – mA
OUTPUT SWING – Volts
Figure 22. Frequency Response, G = +10, G = +100
2.55
–60
DEVICE #3
0.8
0.6
–20
–25
DEVICE #1
1.8
–7–
AD8001
6
1k
100
VS = 65V
RL = 150V
VOUT = 62.5V
4
ROUT – V
TRANSRESISTANCE – kV
5
3
–TZ
2
1
0
–60
1
G = +2
RF = 909V
0.1
+TZ
–40
10
–20
0
20
40
60
80
100
JUNCTION TEMPERATURE – 8C
120
0.01
10k
140
Figure 28. Transresistance vs. Temperature
100
100k
1M
FREQUENCY – Hz
10M
Figure 31. Output Resistance vs. Frequency
100
1
RF = 576V
0
–1
10
10
NONINVERTING CURRENT VS = 65V
RF = 649V
–2
OUTPUT – dB
INVERTING CURRENT VS = 65V
NOISE CURRENT – pA/√Hz
NOISE VOLTAGE – nV/√Hz
100M
–3
–4
G = –1
RL = 100V
VIN = 50mV
RF = 750V
–5
–6
–7
–8
VOLTAGE NOISE VS = 65V
1
10
100
1k
FREQUENCY – Hz
1
100k
10k
–9
1M
Figure 29. Noise vs. Frequency
10M
100M
FREQUENCY – Hz
1G
Figure 32. –3 dB Bandwidth vs. Frequency, G = –1
–48
–52.5
–55.0
–49
–CMRR
–PSRR
–57.5
–50
PSRR – dB
CMRR – dB
–60.0
–51
+CMRR
–52
–53
2.5V SPAN
3V SPAN
–62.5
CURVES ARE FOR WORST
CASE CONDITION WHERE
ONE SUPPLY IS VARIED
WHILE THE OTHER IS
HELD CONSTANT.
–65.0
–67.5
–70.0
–54
–72.5
+PSRR
–55
–56
–60
–75.0
–40
–20
0
20
40
60
80
100
JUNCTION TEMPERATURE – 8C
120
–77.5
–60
140
Figure 30. CMRR vs. Temperature
–40
–20
0
20
40
60
JUNCTION TEMPERATURE – 8C
80
100
Figure 33. PSRR vs. Temperature
–8–
REV. C
AD8001
30
–10
910V
CURVES ARE FOR WORST
CASE CONDITION WHERE
ONE SUPPLY IS VARIED
WHILE THE OTHER IS
HELD CONSTANT.
10
51V
150V
VOUT
62V
0
150V
PSRR – dB
CMRR – dB
–20
20
910V
VIN
–30
–10
–PSRR
–20
–30
–40
+PSRR
–PSRR
+PSRR
–40
RF = 909V
G = +2
–50
–50
–60
300k
1M
10M
FREQUENCY – Hz
100M
1M
1G
Figure 34. CMRR vs. Frequency
1G
10M
100M
FREQUENCY – Hz
Figure 37. PSRR vs. Frequency
1
RF = 549V
0
–1
RF = 649V
OUTPUT – dB
–2
–3
–4
–5
G = –2
RL = 100V
VIN = 50mVrms
RF = 750V
–6
–7
–8
10M
100M
FREQUENCY – Hz
1G
Figure 38. 2 V Step Response, G = –1
Figure 35. –3 dB Bandwidth vs. Frequency, G = –2
100
100
3 WAFER LOTS
COUNT = 895
MEAN = 1.37
STD DEV = 1.13
MIN = –2.45
MAX = +4.69
90
80
70
90
80
CUMULATIVE
70
COUNT
60
50
FREQ DIST
40
40
30
30
20
20
10
10
0
–5
–4
–3
–2
–1
0
1
2
3
INPUT OFFSET VOLTAGE – mV
4
5
Figure 39. Input Offset Voltage Distribution
Figure 36. 100 mV Step Response, G = –1
REV. C
60
50
–9–
0
PERCENT
–9
1M
AD8001
Achieving and maintaining gain flatness of better than 0.1 dB at
frequencies above 10 MHz requires careful consideration of
several issues.
THEORY OF OPERATION
A very simple analysis can put the operation of the AD8001, a
current feedback amplifier, in familiar terms. Being a current
feedback amplifier, the AD8001’s open-loop behavior is expressed as transimpedance, ∆VO/∆I–IN, or TZ. The open-loop
transimpedance behaves just as the open-loop voltage gain of a
voltage feedback amplifier, that is, it has a large dc value and
decreases at roughly 6 dB/octave in frequency.
1M
100k
Since the RIN is proportional to 1/gM, the equivalent voltage
gain is just TZ × gM, where the gM in question is the transconductance of the input stage. This results in a low open-loop
input impedance at the inverting input, a now familiar result.
Using this amplifier as a follower with gain, Figure 40, basic
analysis yields the following result.
TZ – V
10k
1k
100
TZ (S )
VO
=G×
VIN
TZ (S ) + G × RIN + R1
R1
G = 1+
R2
10
100k
RIN = 1 / g M ≈ 50 Ω
1M
10M
FREQUENCY – Hz
100M
1G
Figure 41. Transimpedance vs. Frequency
Recognizing that G × R IN << R1 for low gains, it can be seen to
the first order that bandwidth for this amplifier is independent
of gain (G). This simple analysis in conjunction with Figure 41
can, in fact, predict the behavior of the AD8001 over a wide
range of conditions.
0.1
RF =
649V
0
RF = 698V
–0.1
–0.2
OUTPUT – dB
R1
R2
RIN
VOUT
G = +2
–0.3
RF = 750V
–0.4
–0.5
–0.6
–0.7
VIN
–0.8
–0.9
1M
Figure 40.
Considering that additional poles contribute excess phase at
high frequencies, there is a minimum feedback resistance below
which peaking or oscillation may result. This fact is used to
determine the optimum feedback resistance, R F. In practice
parasitic capacitance at Pin 2 will also add phase in the feedback
loop, so picking an optimum value for R F can be difficult. Figure 42 illustrates this problem. Here the fine scale (0.1 dB/div)
flatness is plotted vs feedback resistance. These plots were taken
using an evaluation card which is available to customers so that
these results may readily be duplicated (see Evaluation Board
section).
10M
FREQUENCY – Hz
100M
Figure 42. 0.1 dB Flatness vs. Frequency
Choice of Feedback and Gain Resistors
Because of the above-mentioned relationship between the bandwidth and feedback resistor, the fine scale gain flatness will, to
some extent, vary with feedback resistance. It, therefore, is
recommended that once optimum resistor values have been
determined, 1% tolerance values should be used if it is desired
to maintain flatness over a wide range of production lots. In
addition, resistors of different construction have different associated parasitic capacitance and inductance. Surface mount resistors were used for the bulk of the characterization for this data
sheet. It is not recommended that leaded components be used
with the AD8001.
–10–
REV. C
AD8001
Printed Circuit Board Layout Considerations
Driving Capacitive Loads
As to be expected for a wideband amplifier, PC board parasitics
can affect the overall closed-loop performance. Of concern are
stray capacitances at the output and the inverting input nodes. If
a ground plane is to be used on the same side of the board as
the signal traces, a space (5 mm min) should be left around the
signal lines to minimize coupling. Additionally, signal lines
connecting the feedback and gain resistors should be short
enough so that their associated inductance does not cause high
frequency gain errors. Line lengths on the order of less than
5 mm are recommended. If long runs of coaxial cable are being
driven, dispersion and loss must be considered.
The AD8001 was designed primarily to drive nonreactive loads.
If driving loads with a capacitive component is desired, best
frequency response is obtained by the addition of a small series
resistance as shown in Figure 44. The accompanying graph
shows the optimum value for RSERIES vs. capacitive load. It is
worth noting that the frequency response of the circuit when
driving large capacitive loads will be dominated by the passive
roll-off of RSERIES and CL.
909V
Power Supply Bypassing
RSERIES
Adequate power supply bypassing can be critical when optimizing the performance of a high frequency circuit. Inductance in
the power supply leads can form resonant circuits that produce
peaking in the amplifier’s response. In addition, if large current
transients must be delivered to the load, then bypass capacitors
(typically greater than 1 µF) will be required to provide the best
settling time and lowest distortion. A parallel combination of
4.7 µF and 0.1 µF is recommended. Some brands of electrolytic
capacitors will require a small series damping resistor ≈4.7 Ω for
optimum results.
IN
RL
500V
CL
Figure 44. Driving Capacitive Loads
40
G = +1
DC Errors and Noise


R 
R 
VOUT = VIO × 1 + F  ± I BN × RN × 1 + F  ± I BI × RF


RI 
RI 
RF
RI
RN
IBI
IBN
VOUT
Figure 43. Output Offset Voltage
REV. C
–11–
30
RSERIES – V
There are three major noise and offset terms to consider in a
current feedback amplifier. For offset errors refer to the equation below. For noise error the terms are root-sum-squared to
give a net output error. In the circuit below (Figure 43) they are
input offset (VIO) which appears at the output multiplied by the
noise gain of the circuit (1 + R F/RI), noninverting input current
(IBN × RN) also multiplied by the noise gain, and the inverting
input current, which when divided between RF and RI and subsequently multiplied by the noise gain always appears at the
output as IBN × RF. The input voltage noise of the AD8001 is a
low 2 nV/√Hz. At low gains though the inverting input current
noise times RF is the dominant noise source. Careful layout and
device matching contribute to better offset and drift specifications for the AD8001 compared to many other current feedback
amplifiers. The typical performance curves in conjunction with
the equations below can be used to predict the performance of
the AD8001 in any application.
20
10
0
0
5
10
15
20
25
CL – pF
Figure 45. Recommended RSERIES vs. Capacitive Load
AD8001
Communications
Operation as a Video Line Driver
Distortion is a key specification in communications applications.
Intermodulation distortion (IMD) is a measure of the ability of
an amplifier to pass complex signals without the generation of
spurious harmonics. The third order products are usually the
most problematic since several of them fall near the fundamentals and do not lend themselves to filtering. Theory predicts that
the third order harmonic distortion components increase in
power at three times the rate of the fundamental tones. The
specification of third order intercept as the virtual point where
fundamental and harmonic power are equal is one standard
measure of distortion performance. Op amps used in closedloop applications do not always obey this simple theory. At a
gain of two, the AD8001 has performance summarized in Figure 46. Here the worst third order products are plotted vs. input
power. The third order intercept of the AD8001 is +33 dBm at
10 MHz.
The AD8001 has been designed to offer outstanding performance as a video line driver. The important specifications of
differential gain (0.01%) and differential phase (0.025°) meet
the most exacting HDTV demands for driving one video load.
The AD8001 also drives up to two back terminated loads as
shown in Figure 47, with equally impressive performance (0.01%,
0.07°). Another important consideration is isolation between
loads in a multiple load application. The AD8001 has more
than 40 dB of isolation at 5 MHz when driving two 75 Ω back
terminated loads.
909V
75V
75V CABLE
909V
VOUT #1
+VS
75V
0.001mF
+
0.1mF
–45
THIRD ORDER IMD – dBc
–50
75V
CABLE
G = +2
F1 = 10MHz
AD8001
VIN
F2 = 12MHz
75V
CABLE
VOUT #2
0.1mF
75V
75V
2F2 – F1
–55
75V
0.001mF
–60
–VS
2F1 – F2
–65
Figure 47. Video Line Driver
–70
–75
–80
–8 –7
–6
–5
–4
–3 –2 –1 0
1
INPUT POWER – dBm
2
3
4
5
6
Figure 46. Third Order IMD; F1 = 10 MHz, F2 = 12 MHz
–12–
REV. C
AD8001
to both ADCs as shown in Figure 48 reduces the number of
external components required to create a complete data
acquisition system. The 20 Ω resistors in series with ADC inputs are used to help the AD8001s drive the 10 pF ADC input
capacitance. The AD8001 only adds 100 mW to the power
consumption while not limiting the performance of the circuit.
Driving A-to-D Converters
The AD8001 is well suited for driving high speed analog-todigital converters such as the AD9058. The AD9058 is a dual
8-bit 50 MSPS ADC. In the circuit below the AD8001 is shown
driving the inputs of the AD9058, which are configured for 0 V
to +2 V ranges. Bipolar input signals are buffered, amplified
(–2×), and offset (by +1.0 V) into the proper input range of the
ADC. Using the AD9058’s internal +2 V reference connected
1kV
ENCODE
74ACT04
10
ENCODE A
8
649V
38
ANALOG
IN A
60.5V
324V
10pF
50V
36
ENCODE B
–VREF A
+VS
–VREF B
5, 9, 22,
24, 37, 41
AD9058
20V
AD8001
6
RZ1
(J-LEAD)
AIN A
1.3kV
+5V
0.1mF
D0A (LSB)
18
17
AD707
0.1mF
20kV
20kV
3
0.1mF
43
15
+VINT
14
+VREF A
13
+VREF B
12
D7A (MSB)
1.3kV
649V
D0B (LSB)
324V
28
RZ2
29
30
20V
AD8001
40
31
AIN B
32
33
1
D7B (MSB)
–VS
RZ1, RZ2 = 2,000V SIP (8-PKG)
35
7, 20,
26, 39
0.1mF
4,19, 21
25, 27, 42
Figure 48. AD8001 Driving a Dual A-to-D Converter
REV. C
–13–
8
34
COMP
0.1mF
8
11
74ACT 273
ANALOG
IN B
60.5V
74ACT 273
16
2
–2V
–5V
1N4001
CLOCK
AD8001
(4.7 µF–10 µF) tantalum electrolytic capacitor should be connected in parallel, but not necessarily so close, to supply current
for fast, large-signal changes at the output.
Layout Considerations
The specified high speed performance of the AD8001 requires
careful attention to board layout and component selection.
Proper RF design techniques and low parasitic component selection are mandatory.
The feedback resistor should be located close to the inverting
input pin in order to keep the stray capacitance at this node to a
minimum. Capacitance variations of less than 1 pF at the inverting input will significantly affect high speed performance.
The PCB should have a ground plane covering all unused portions of the component side of the board to provide a low impedance ground path. The ground plane should be removed
from the area near the input pins to reduce stray capacitance.
Stripline design techniques should be used for long signal traces
(greater than about 1 in.). These should be designed with a
characteristic impedance of 50 Ω or 75 Ω and be properly terminated at each end.
Chip capacitors should be used for supply bypassing (see Figure
49). One end should be connected to the ground plane and the
other within 1/8-inch of each power pin. An additional large
RF
RF
+VS
+VS
+VS
C1
0.1mF
RG
IN
RO
RT
RG
C3
10mF
RO
OUT
OUT
C2
0.1mF
RS
–VS
IN
C4
10mF
RT
–VS
Inverting Configuration
Supply Bypassing
–VS
Noninverting Configuration
Figure 49. Inverting and Noninverting Configurations for Evaluation Boards
Table I. Recommended Component Values
AD8001AN (DIP)
Gain
AD8001AR (SOIC)
Gain
AD8001ART (SOT-23-5)
Gain
Component
–1
+1
+2
+10
+100
–1
+1
+2
+10
+100
–1
+1
RF (Ω)
RG (Ω)
RO (Nominal) (Ω)
RS (Ω)
RT (Nominal) (Ω)
Small Signal
BW (MHz)
0.1 dB Flatness
(MHz)
649
649
49.9
0
54.9
340
1050
470
51
49.9
1000
10
49.9
49.9
681
681
49.9
470
51
49.9
1000
10
49.9
49.9
880
49.9
460
49.9
260
49.9
20
604
604
49.9
0
54.9
370
953
49.9
750
750
49.9
49.9
710
49.9
440
49.9
260
49.9
20
845
845
49.9
0
54.9
240
70
105
130
100
120
110
105
–14–
+2
+10
+100
1000 768
768
49.9 49.9
470
51
49.9
1000
10
49.9
49.9
795
49.9
380
49.9
260
49.9
20
300
145
REV. C
AD8001
Evaluation Board
An evaluation board for the AD8001 is available that has been
carefully laid-out and tested to demonstrate that the specified
high speed performance of the device can be realized. For
Figure 50. Evaluation Board
Silkscreen (Top)
REV. C
ordering information, please refer to the Ordering Guide. The
layout of the evaluation board can be used as shown or serve as
a guide for a board layout.
Figure 51. Evaluation Board Layout
(Solder Side)
–15–
Figure 52. Evaluation Board Layout
(Component Side)
AD8001
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).
8-Lead Plastic DIP
(N-8)
8-Lead Cerdip
(Q-8)
8
5
1
PIN 1
0.005 (0.13)
MIN
8
0.280 (7.11)
0.240 (6.10)
0.210
(5.33)
MAX
0.310 (7.87)
0.220 (5.59)
1
0.325 (8.25)
0.300 (7.62)
0.060 (1.52)
0.015 (0.38)
0.022 (0.558) 0.070 (1.77) SEATING
0.014 (0.356) 0.045 (1.15) PLANE
0.060 (1.52)
0.015 (0.38)
0.200.(5.08)
MAX
1
4
SEATING
0.023 (0.58) 0.070 (1.78) PLANE
0.014 (0.36) 0.030 (0.76)
0.1181 (3.00)
0.1102 (2.80)
0.2440 (6.20)
0.2284 (5.80)
0.0669 (1.70)
0.0590 (1.50)
5
1
0.1181 (3.00)
0.1024 (2.60)
3
0.0374 (0.95) BSC
0.0688 (1.75)
0.0532 (1.35)
0.0748 (1.90)
BSC
88
0.0500 (1.27)
0.0098 (0.25) 08
0.0160 (0.41)
0.0075 (0.19)
0.0512 (1.30)
0.0354 (0.90)
0.0059 (0.15)
0.0019 (0.05)
0.0079 (0.20)
0.0031 (0.08)
0.0571 (1.45)
0.0374 (0.95)
0.0197 (0.50)
0.0138 (0.35)
SEATING
PLANE
108
08
0.0217 (0.55)
0.0138 (0.35)
PRINTED IN U.S.A.
0.0192 (0.49)
0.0138 (0.35)
4
2
PIN 1
0.0196 (0.50)
3 458
0.0099 (0.25)
0.0500 (1.27)
BSC
SEATING
PLANE
0.015 (0.38)
0.008 (0.20)
15°
0°
5-Lead Plastic Surface Mount (SOT-23)
(RT-5)
PIN 1
0.0098 (0.25)
0.0040 (0.10)
0.150
(3.81)
MIN
0.200 (5.08)
0.125 (3.18)
0.015 (0.381)
0.008 (0.204)
0.1968 (5.00)
0.1890 (4.80)
5
0.320 (8.13)
0.290 (7.37)
0.405 (10.29) MAX
0.195 (4.95)
0.115 (2.93)
8-Lead Plastic SOIC
(SO-8)
8
4
0.100 (2.54) BSC
0.130
(3.30)
MIN
0.160 (4.06)
0.115 (2.93)
0.1574 (4.00)
0.1497 (3.80)
5
PIN 1
4
0.100 (2.54)
BSC
0.055 (1.4)
MAX
C1886c–0–12/99
0.430 (10.92)
0.348 (8.84)
–16–
REV. C
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