Excelics EIA1718A-1P 17.3-18.1ghz, 1w internally matched power fet Datasheet

Excelics
EIA/EIB1718A-1P
PRELIMINARY DATA SHEET
17.3-18.1GHz, 1W Internally Matched Power FET
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17.3-18.1GHz BANDWIDTH AND INPUT/OUTPUT
IMPEDANCE MATCHED TO 50 OHM
EIA FEATURES HIGH PAE( 25% TYPICAL)
EIB FEATURES HIGH IP3(43dBm TYPICAL)
+30.5/+29.5dBm TYPICAL P1dB OUTPUT POWER FOR
EIA/EIB
7.5/6.0dB TYPICAL G1dB POWER GAIN FOR EIA/EIB
NON-HERMETIC METAL FLANGE PACKAGE
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
EIA1718A-1P
SYMBOLS
PARAMETERS/TEST CONDITIONS
P1dB
MIN
TYP
Output Power at 1dB Compression f=17.3-18.1GHz
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
29
G1dB
Gain at 1dB Compression
f=17.3-18.1GHz
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
6.5
PAE
Power Added Efficiency at 1dB compression
f=17.3-18.1GHz
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
Id1dB
Drain Current at 1dB Compression
EIB1718A-1P
MAX
MAX
UNIT
MIN
TYP
30.5
29.0
29.5
dBm
7.5
5.5
6.0
dB
30
25
%
440
425
mA
37
43*
dBm
rd
IP3
Output 3 Order Intercept Point
f=17.3-18.1GHz
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
Idss
Saturated Drain Current Vds=3V, Vgs=0V
Gm
Transconductance
Vds=3V, Vgs=0V
760
Vp
Pinch-off Voltage
Vds=3V, Ids=6mA
-1.0
BVgd
Drain Breakdown Voltage Igd=2.4mA
550
720
-13
Thermal Resistance (Au-Sn Eutectic Attach)
Rth
*Typical –45dBc IM3 at Pout=20dBm/Tone
850
550
720
850
360
-2.5
-2.0
-15
-15
16
16
mS
-3.5
MAXIMUM RATINGS AT 25OC
SYMBOLS
PARAMETERS
ABSOLUTE1
CONTINUOUS2
Vds
Drain-Source Voltage
12V
Vgs
Gate-Source Voltage
-8V
-3V
Ids
Drain Current
Idss
Idss
Igsf
Forward Gate Current
90mA
15mA
Pin
Input Power
32dBm
@ 3dB Compression
Tch
Channel Temperature
175oC
150oC
Tstg
Pt
Storage Temperature
Total Power Dissipation
mA
8V
o
-65/175 C
8.5
-65/150oC
7.1W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
V
V
o
C/W
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