ＴＯＳＨＩＢＡ ＴＰＣＦ８１０４ TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE(U−MOSⅣ) ＴＰＣＦ８１０４ Ｔｅｎｔａｔｉｖｅ NOTE BOOK PC APPLICATIONS PORTABLE EQUIPMENTS APPLICATIONS UNIT:mm Low Drain - Source ON Resistance：ＲＤＳ(ＯＮ)＝26ｍΩ(Typ.) ・High Forward Transfer Admittance：￨Ｙｆｓ￨＝ Ｓ(Typ.) ・Low Leakage Current：ＩＤＳＳ＝-10μＡ(Max.) (ＶＤＳ＝-30Ｖ) ・Enhancement - Mode：Ｖｔｈ＝-0.8 ∼ -2.0Ｖ(ＶＤＳ＝-10Ｖ,ＩＤ＝-1mＡ) THERMAL CHARACTERISTICS CHARACTERISTICS Thermal Resistance, Channel to Ambient (t=5s) (Note2a) Thermal Resistance, Channel to Ambient (t=5s) (Note2b) 0.7 Ｗ ＥＡＳ ＩＡＲ ＥＡＲ Ｔｃｈ Ｔｓｔｇ 5.9 3 0.25 150 −55∼150 ｍＪ Ａ ｍＪ ℃ ℃ A 0.65 1 0.95 0.95 3 2.9±0.2 0.475 Ｒｔｈ(ｃｈ−ａ) MAX. UNIT 50.0 ℃／Ｗ Ｒｔｈ(ｃｈ−ａ) 178.6 ℃／Ｗ SYMBOL Note1, Note2, Note3, Note4, Note5 Please see next page. THIS TRANSISTOR IS AN ELECTROSTATIC SENSITIVE DEVICE. PLEASE HANDLE WITH CAUTION. 0.8±0.05 +0.25 0.25 -0.15 S 1. Drain 1：DRAIN 2. Drain 2：DRAIN 3. Gat 3：DRAIN 4：GATE 0.05±0.05 0.05 0.05 S 1.9±0.1 ＰＤ 1.5±0.1 Ｖ Ａ Ａ Ｗ 4 0.24＋0.10 −0.09 ±20 -6 -24 2.5 1 5 0.16±0.05 ＶＧＳＳ ＩＤ ＩＤＰ ＰＤ +0.2 -0.1 +0.2 2.8 -0.3 UNIT Ｖ Ｖ A 1.6 RATING -30 -30 8 0.7±0.05 SYMBOL ＶＤＳＳ ＶＤＧＲ +0.1 ／ − 0.3±0.1 0.025 M 4 0.3 0 05 6 0.71 +0.04 0.71 +0.04 −0.16 −0.16 MAXIMUM RATINGS（Ta＝25℃） CHARACTERISTIC Drain - Source Voltage Drain - Gate Voltage (ＲＧＳ＝20ｋΩ) Gate - Source Voltage DC (Note1) Drain Current Pulse (Note1) Drain Power Dissipation (t=5s) (Note2a) Drain Power Dissipation (t=5s) (Note2b) Single Pulse Avalanche Energy(Note3) Avalanche Current Repetitive Avalanche Energy (Note4) Channel Temperature Storage Temperature Range 2.9±0.1 4. Source 5：SOURCE 5. Drain 6：DRAIN 6 Drain 7：DRAIN 8：DRAIN ＪＥＤＥＣ ― ＪＥＩＴＡ ― TOSHIBA ― Circuit Configuration 8 7 6 5 1 2 3 4 ＴＯＳＨＩＢＡ ＴＰＣＦ８１０４ Ｔｅｎｔａｔｉｖｅ ELECTRICAL CHARACTERISTICS（Ta＝25℃） CHARACTERISTICS SYMBOL Gate Leakage Current ＩＧＳＳ Drain Cut-off Current ＩＤＳＳ Ｖ(ＢＲ)ＤＳＳ Drain-Source Breakdown Voltage Ｖ(ＢＲ)ＤＳＸ Gate Threshold Voltage Ｖｔｈ Drain-Source ON Resistance ＲＤＳ(ＯＮ) Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Output Capacitance Rise Time Switching Time Turn-on Time Fall Time Turn-off Time Total Gate Charge (Gate-Source Plus Gate-Drain) Gate-Source Charge Gate-Drain(“Miller”)Charge ￨Ｙｆｓ￨ Ｃｉｓｓ Ｃｒｓｓ Ｃｏｓｓ TEST CONDITION ＶＧＳ＝±16Ｖ，ＶＤＳ＝0Ｖ ＶＤＳ＝-30Ｖ，ＶＧＳ＝0Ｖ ＩＤ＝-10ｍＡ，ＶＧＳ＝0Ｖ ＩＤ＝-10ｍＡ，ＶＧＳ＝20Ｖ ＶＤＳ＝-10Ｖ，ＩＤ＝-1mＡ ＶＧＳ＝-4.5Ｖ，ＩＤ＝3Ａ ＶＧＳ＝-10Ｖ，ＩＤ＝-3Ａ ＶＤＳ＝-10Ｖ，ＩＤ＝-3Ａ ＶＤＳ＝-10Ｖ，ＶＧＳ＝0Ｖ ｆ＝1ＭＨｚ ｔｒ ｔｏｎ ｔｆ ｔｏｆｆ Ｑｇ Ｑｇｓ Ｑｇｄ ID=-3.0A 0V VOUT VGS -10V TYP. − − − − − 37 26 TBD TBD TBD TBD MAX. ±10 -10 − − -2.0 46 33 − − − − − TBD − − TBD − − TBD − − TBD − − TBD − − − TBD TBD − − MIN. − TYP. − MAX. -24 UNIT Ａ − − 1.2 Ｖ RL=5Ω 4.7Ω Duty≦1%,tw=10us VDD≒-15V ＶＤＤ≒-24Ｖ，ＶＧＳ＝-10Ｖ ＩＤ＝-6Ａ SOURCE - DRAIN DIODE RATINGS AND CHARACTERISTICS（Ta＝25℃） CHARACTERISTICS SYMBOL TEST CONDITION Pulse Drain Reverse Current ＩＤＲＰ − (Note1) Diode Forward Voltage ＶＤＳＦ ＩＤＲ＝-6Ａ，ＶＧＳ＝0Ｖ Note1 Note2: MIN. − − -30 -15 -0.8 − − TBD − − − (a) Device mounted on glass-epoxy board (a) (b) Device mounted on glass-epoxy board (b) FR-4 FR-4 25.4×25.4×0.8 25.4×25.4×0.8 (Unit in mm) (Unit in mm) Note3: Note4: Ｓ ｐＦ ｎｓ Please use devices on condition that the channel temperature is below 150℃. (a) UNIT μＡ μＡ Ｖ Ｖ Ｖ mΩ (b) VDD=-24V, Tch=25℃(initial), L=0.5mH, RG=25Ω, IAR=-3.0A Repetitive rating ; Pulse Width Limited by Max. Channel Temperature. ｎＣ ＴＯＳＨＩＢＡ ＴＰＣＦ８１０４