TOSHIBA TPCS8104

TPCS8104
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
TPCS8104
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
•
Unit: mm
Small footprint due to small and thin package
•
Low drain-source ON resistance: RDS (ON) = 8.1 mΩ (typ.)
•
High forward transfer admittance: |Yfs| = 23 S (typ.)
•
Low leakage current: IDSS = −10 µA (max) (VDS = −30 V)
•
Enhancement-mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
−30
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
−30
V
Gate-source voltage
VGSS
±20
V
(Note 1)
ID
−11
Pulse (Note 1)
IDP
−44
Drain power dissipation (t = 10 s)
(Note 2a)
PD
1.1
W
Drain power dissipation (t = 10 s)
(Note 2b)
PD
0.6
W
Single pulse avalanche energy
(Note 3)
EAS
31.5
mJ
Avalanche current
IAR
−11
A
Repetitive avalanche energy
(Note 2a) (Note 4)
EAR
0.11
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Drain current
DC
A
JEDEC
―
JEITA
―
TOSHIBA
2-3R1B
Weight: 0.035 g (typ.)
Circuit Configuration
8
7
6
5
1
2
3
4
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
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2002-04-05
TPCS8104
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2a)
Rth (ch-a)
114
°C/W
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2b)
Rth (ch-a)
208
°C/W
Marking (Note 5)
Type
S8104
※
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2:
(a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
(a)
(b)
Note 3: VDD = −24 V, Tch = 25°C (initial), L = 0.2 mH, RG = 25 Ω, IAR = −11 A
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5: ○ on lower right of the marking indicates Pin 1.
※ shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of
manufacture: January to December are denoted by letters A to L respectively.)
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TPCS8104
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V


±10
µA
Drain cut-OFF current
IDSS
VDS = −30 V, VGS = 0 V


−10
µA
V (BR) DSS
ID = −10 mA, VGS = 0 V
−30


V (BR) DSX
ID = −10 mA, VGS = 20 V
−15


Vth
VDS = −10 V, ID = −1 mA
−0.8

−2.0
VGS = −4 V, ID = −5.5 A

12
18
VGS = −10 V, ID = −5.5 A

8.1
12
VDS = −10 V, ID = −5.5 A
11
23


5710


560


590


18


23

Gate threshold voltage
Drain-source ON resistance
RDS (ON)
Forward transfer admittance
|Yfs|
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Rise time
Turn-ON time
tr
ton
VDS = −10 V, VGS = 0 V, f = 1 MHz
0V
VGS
−10 V
Fall time
4.7 Ω
Switching time
ID = −5.5 A
VOUT
RL = 2.7 Ω
Drain-source breakdown voltage
tf
V
V
mΩ
S
pF
ns

109


396


107


12


20

VDD ∼
− −15 V
Turn-OFF time
Total gate charge
(gate-source plus gate-drain)
toff
Qg
Gate-source charge 1
Qgs1
Gate-drain (“miller”) charge
Qgd
Duty <
= 1%, tw = 10 µs
VDD ∼
− −24 V, VGS = 10 V,
ID = −11 A
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Drain reverse current
Forward voltage (diode)
Pulse
(Note 1)
Symbol
Test Condition
Min
Typ.
Max
Unit
IDRP



−44
A


1.2
V
VDSF
IDR = −11 A, VGS = 0 V
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TPCS8104
ID – VDS
−10
−8
−10
−3
−5
−4
−2.5
Common source
Ta = 25°C
Pulse test
−2.4
−2.2
−4
−2.1
−2
−4
−6
−8
Drain-source voltage VDS
−2.7
−2.4
−12
−2.3
−8
−2.2
VGS = −2.1 V
−4
(V)
−8
(V)
Drain-source voltage VDS
(A)
−30
ID
Drain current
−20
(V)
VDS – VGS
−20
−10
25
100
−2
−1
−3
−4
−0.3
−0.2
ID = −11 A
VGS
(V)
−2.5
−4
−8
|Yfs| – ID
50
50
Drain-source ON resistance
RDS (ON) (mΩ)
30
Ta = −55°C
25
10
100
3
1
Common source
VDS = −10 V
Pulse test
0.5
−1
−3
Drain current
−16
VGS
−20
(V)
RDS (ON) – ID
100
−0.3 −0.5
−12
Gate-source voltage
100
5
−5.5
−0.1
0
0
−5
Common source
Ta = 25°C
Pulse test
−0.4
Ta = −55°C
Gate-source voltage
|Yfs| (S)
−16
−0.5
Common source
VDS = −10 V
Pulse test
Forward transfer admittance
−12
Drain-source voltage VDS
ID – VGS
0.3
−0.1
−2.5
−5
Common source
Ta = 25°C
Pulse test
−4
0
0
−10
−40
0
0
−2.6
−4
VGS = −2 V
−2
−3
(A)
ID
Drain current
−6
0
0
−10
−16
−2.3
(A)
ID
Drain current
ID – VDS
−20
−5
ID
−10
30
VGS = −4.5 V
10
−10
5
3
1
Common source
Ta = 25°C
Pulse test
0.5
0.3
−0.1
−30 −50
(A)
−0.3 −0.5
−1
−3
Drain current
4
−5
ID
−10
−30 −50
(A)
2002-04-05
TPCS8104
RDS (ON) – Ta
IDR – VDS
−100
25
Common source
(A)
IDR
15
Drain reverse current
VGS = −4.5 V
10
ID = −11 A, −5.5 A, −2.5 A
−10
0
40
80
120
−1
Common source
Ta = 25°C
Pulse test
−0.1
0
160
VGS = 0 V
0.2
0.4
0.6
0.8
Drain-source voltage VDS
Ambient temperature Ta (°C)
−2.5
Common source
Gate threshold voltage Vth (V)
Capacitance
C
(pF)
30000
10000
Ciss
5000
3000
1000
Coss
Crss
500
−3
−10
Drain-source voltage VDS
−30
VDS = −10 V
Pulse test
−1.5
−1
−0.5
0
−80
−100
(1)
(V)
0.4
50
75
100
80
120
160
Dynamic Input/Output Characteristics
(2)
25
40
−30
0.8
0
0
0
Ambient temperature Ta (°C)
Drain-source voltage VDS
(W)
PD
Drain power dissipation
1.2
−40
(V)
(1) Device mounted on a
glass-epoxy board (a)
(Note 2a)
(2) Device mounted on a
glass-epoxy board (b)
(Note 2b)
t = 10 s
1.6
ID = −1 mA
−2
PD – Ta
2.0
(V)
Vth – Ta
Capacitance – VDS
50000
Common source
300
VGS = 0 V
f = 1 MHz
Ta = 25°C
100
−0.1
−0.3
−1
1
125
150
−25
−20
Ambient temperature Ta (°C)
−10
VDD = −24 V
−12
−6
VDD = −24 V
−12
−6
−6
Common source
VGS
−10
ID = −11 A
−4
Ta = 25°C
Pulse test
−5
−2
20
40
60
Total gate charge
5
−8
VDS
−15
0
0
175
−12
100
80
Qg
120
(V)
−40
−1
VGS
0
−80
−3
−10
Gate-source voltage
Drain-source ON resistance
RDS (ON) (mΩ)
ID = −11 A, −5.5 A, −2.5 A
20
5
−5
−10
Pulse test
0
140
(nC)
2002-04-05
TPCS8104
rth − tw
1000
Normalized transient thermal impedance rth (°C/W)
(1) Device mounted on a glass-epoxy
board (a) (Note 2a)
100
(2) Device mounted on a glass-epoxy
board (b) (Note 2b)
(2)
t = 10 s
(1)
10
1
Single pulse
0.1
0.001
0.01
0.1
1
Pulse width
10
tw
100
1000
(s)
Safe Operating Area
100
ID max (pulse)*
1 ms*
10 ms*
Drain current
ID
(A)
10
1
0.1
*: Single pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
0.01
0.01
0.1
VDSS max
1
Drain-source voltage VDS
10
100
(V)
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TPCS8104
RESTRICTIONS ON PRODUCT USE
000707EAA
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
• The information contained herein is subject to change without notice.
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